Joachim Wecker

Person

Rottenbach, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Sequential functionalization of phosphorescent emitter layers
- Patent number 10,347,849
- Issue date Jul 9, 2019
- Siemens Aktiengesellschaft
- Ana-Maria Krestel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits, cell, cell arrangement, method of reading a ce...
- Patent number 7,755,936
- Issue date Jul 13, 2010
- Qimonda AG
- Joachim Wecker
- G11 - INFORMATION STORAGE
Information Patent Grant
Force sensor array having magnetostrictive magnetoresistive sensors...
- Patent number 7,535,217
- Issue date May 19, 2009
- Infineon Technologies AG
- Eckard Quandt
- G01 - MEASURING TESTING
Information Patent Grant
MRAM memory cell having a weak intrinsic anisotropic storage layer...
- Patent number 7,436,700
- Issue date Oct 14, 2008
- Infineon Technologies AG
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory cell having a weak intrinsic anisotropic storage layer...
- Patent number 7,280,393
- Issue date Oct 9, 2007
- Infineon Technologies AG
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Grant
TMR sensor
- Patent number 7,234,360
- Issue date Jun 26, 2007
- Stifting Caesar
- Eckhard Quandt
- G01 - MEASURING TESTING
Information Patent Grant
Method for homogeneously magnetizing an exchange-coupled layer syst...
- Patent number 7,075,814
- Issue date Jul 11, 2006
- Infineon Technologies AG
- Hubert Brueckl
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensor device having a magnetostrictive force sensor
- Patent number 6,988,414
- Issue date Jan 24, 2006
- Stiftung Caesar Center of Advanced European Studies and Research
- Manfred Rührig
- G01 - MEASURING TESTING
Information Patent Grant
Digital magnetic memory cell device
- Patent number 6,903,430
- Issue date Jun 7, 2005
- Infineon Technologies AG
- Manfred Rührig
- G11 - INFORMATION STORAGE
Information Patent Grant
Contactless proximity switch
- Patent number 6,060,969
- Issue date May 9, 2000
- Siemens Aktiengesellschaft
- Erich Hufgard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetoresistive sensor utilizing a sensor material with a perovski...
- Patent number 5,563,331
- Issue date Oct 8, 1996
- Siemens Aktiengesellschaft
- Rittmar Von Helmolt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a structure having enhanced magnetoresistance,...
- Patent number 5,498,298
- Issue date Mar 12, 1996
- Siemens Aktiengesellschaft
- Joachim Wecker
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Process for the production of magnetic material based on the Sm-Fe-...
- Patent number 5,288,339
- Issue date Feb 22, 1994
- Siemens Aktiengesellschaft
- Kurt Schnitzke
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for the production of shaped body from an anisotropic magne...
- Patent number 5,137,587
- Issue date Aug 11, 1992
- Siemens Aktiengesellschaft
- Ludwig Schultz
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Process for the production of an anisotropic magnetic material base...
- Patent number 5,137,588
- Issue date Aug 11, 1992
- Siemens Aktiengesellschaft
- Joachim Wecker
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method for the epitaxial preparation of a layer of a metal-oxide su...
- Patent number 4,950,644
- Issue date Aug 21, 1990
- Siemens Aktiengesellschaft
- Ludwig Schultz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing superconducting oxide films by seeding formati...
- Patent number 4,940,842
- Issue date Jul 10, 1990
- Siemens Aktiengesellschaft
- Ludwig Schultz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the manufacture of an anisotropic magnet material on the...
- Patent number 4,854,979
- Issue date Aug 8, 1989
- Siemens Aktiengesellschaft
- Joachim Wecker
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Sequential Functionalization Of Phosphorescent Emitter Layers
- Publication number 20180182979
- Publication date Jun 28, 2018
- Siemens Aktiengesellschaft
- Ana-Maria Krestel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conversion Film For Converting Ionizing Radiation, Radiation Detector
- Publication number 20160327655
- Publication date Nov 10, 2016
- Siemens Aktiengesellschaft
- David Hartmann
- G01 - MEASURING TESTING
Information Patent Application
Integrated Circuits, Cell, Cell Arrangement, Method of Reading a Ce...
- Publication number 20090190390
- Publication date Jul 30, 2009
- Joachim Wecker
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM Memory Cell Having a Weak Intrinsic Anisotropic Storage Layer...
- Publication number 20080002462
- Publication date Jan 3, 2008
- INFINEON TECHNOLOGIES AG
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM memory cell having a weak intrinsic anisotropic storage layer...
- Publication number 20070086236
- Publication date Apr 19, 2007
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer force sensor and method for determining a force
- Publication number 20060251928
- Publication date Nov 9, 2006
- Eckhardt Quandt
- G01 - MEASURING TESTING
Information Patent Application
Force sensor array having magnetostrictive magnetoresistive sensors...
- Publication number 20060246271
- Publication date Nov 2, 2006
- Eckard Quandt
- G01 - MEASURING TESTING
Information Patent Application
MRAM memory cell having a weak intrinsic anisotropic storage layer...
- Publication number 20050174838
- Publication date Aug 11, 2005
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Application
Method for homogeneously magnetizing an exchange-coupled layer syst...
- Publication number 20050105355
- Publication date May 19, 2005
- Hubert Brueckl
- G11 - INFORMATION STORAGE
Information Patent Application
Sensor device having a magnetostrictive force sensor
- Publication number 20040216534
- Publication date Nov 4, 2004
- Manfred Ruhrig
- G01 - MEASURING TESTING
Information Patent Application
TMR sensor
- Publication number 20040050172
- Publication date Mar 18, 2004
- Eckhard Quandt
- G01 - MEASURING TESTING
Information Patent Application
Digital magnetic memory cell device
- Publication number 20030063492
- Publication date Apr 3, 2003
- Manfred Ruhrig
- B82 - NANO-TECHNOLOGY

Joachim Wecker

Person

Patents Grantslast 30 patents

Sequential functionalization of phosphorescent emitter layers

Integrated circuits, cell, cell arrangement, method of reading a ce...

Force sensor array having magnetostrictive magnetoresistive sensors...

MRAM memory cell having a weak intrinsic anisotropic storage layer...

MRAM memory cell having a weak intrinsic anisotropic storage layer...

TMR sensor

Method for homogeneously magnetizing an exchange-coupled layer syst...

Sensor device having a magnetostrictive force sensor

Digital magnetic memory cell device

Contactless proximity switch

Magnetoresistive sensor utilizing a sensor material with a perovski...

Method for preparing a structure having enhanced magnetoresistance,...

Process for the production of magnetic material based on the Sm-Fe-...

Process for the production of shaped body from an anisotropic magne...

Process for the production of an anisotropic magnetic material base...

Method for the epitaxial preparation of a layer of a metal-oxide su...

Method for preparing superconducting oxide films by seeding formati...

Method for the manufacture of an anisotropic magnet material on the...

Patents Applicationslast 30 patents

Sequential Functionalization Of Phosphorescent Emitter Layers

Conversion Film For Converting Ionizing Radiation, Radiation Detector

Integrated Circuits, Cell, Cell Arrangement, Method of Reading a Ce...

MRAM Memory Cell Having a Weak Intrinsic Anisotropic Storage Layer...

MRAM memory cell having a weak intrinsic anisotropic storage layer...

Multilayer force sensor and method for determining a force

Force sensor array having magnetostrictive magnetoresistive sensors...

MRAM memory cell having a weak intrinsic anisotropic storage layer...

Method for homogeneously magnetizing an exchange-coupled layer syst...

Sensor device having a magnetostrictive force sensor

TMR sensor

Digital magnetic memory cell device