Joachim Weyers

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device having vertically parallel p-n layers fo...
- Patent number 12,119,376
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with transistor cell and clamp regions in a...
- Patent number 12,057,473
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with transistor cell and clamp region
- Patent number 11,876,133
- Issue date Jan 16, 2024
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short circuit protection structure in MOS-gated power devices
- Patent number 11,688,732
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die
- Patent number 11,430,781
- Issue date Aug 30, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sensor for crack detection
- Patent number 11,424,358
- Issue date Aug 23, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an electrostatic discharge protection s...
- Patent number 11,302,781
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor arrangement
- Patent number 10,971,620
- Issue date Apr 6, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,741,541
- Issue date Aug 11, 2020
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a trench structure
- Patent number 10,541,327
- Issue date Jan 21, 2020
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a manufacturing method therefor
- Patent number 10,504,891
- Issue date Dec 10, 2019
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate contact structure
- Patent number 10,483,383
- Issue date Nov 19, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS having a drift zone with a compensation structure
- Patent number 10,468,479
- Issue date Nov 5, 2019
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an electrostatic discharge protection s...
- Patent number 10,418,358
- Issue date Sep 17, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 10,354,992
- Issue date Jul 16, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,199,367
- Issue date Feb 5, 2019
- Infineon Technologies Dresden GmbH
- Markus Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising electrostatic discharge protection...
- Patent number 9,991,252
- Issue date Jun 5, 2018
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a diode at least partly arranged in...
- Patent number 9,947,648
- Issue date Apr 17, 2018
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having pillar regions of differen...
- Patent number 9,947,741
- Issue date Apr 17, 2018
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS having a non-depletable extension zone formed between an acti...
- Patent number 9,773,863
- Issue date Sep 26, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device, electronic circuit and method for switching h...
- Patent number 9,768,160
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with electrostatic discharge protection structure
- Patent number 9,728,529
- Issue date Aug 8, 2017
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including magnetically coupled monolithic inte...
- Patent number 9,640,602
- Issue date May 2, 2017
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having alternating n-type and p-t...
- Patent number 9,570,607
- Issue date Feb 14, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling breakdown voltage of a diode having a semicon...
- Patent number 9,548,400
- Issue date Jan 17, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit with a low-side transistor and a level shifter...
- Patent number 9,490,250
- Issue date Nov 8, 2016
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising electrostatic discharge protection...
- Patent number 9,472,544
- Issue date Oct 18, 2016
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 9,418,851
- Issue date Aug 16, 2016
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a diode arranged in a trench
- Patent number 9,401,355
- Issue date Jul 26, 2016
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device and manufacturing therefor
- Patent number 9,293,528
- Issue date Mar 22, 2016
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20240387721
- Publication date Nov 21, 2024
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIODE AND MANUFACTURING METHOD
- Publication number 20230326974
- Publication date Oct 12, 2023
- INFINEON TECHNOLOGIES AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SENSE ELEMENT
- Publication number 20230127508
- Publication date Apr 27, 2023
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION
- Publication number 20220406928
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20220102549
- Publication date Mar 31, 2022
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...
- Publication number 20220102487
- Publication date Mar 31, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short Circuit Protection Structure in MOS-Gated Power Devices
- Publication number 20210193646
- Publication date Jun 24, 2021
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20200321463
- Publication date Oct 8, 2020
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die
- Publication number 20200243505
- Publication date Jul 30, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Contact Structure for a Semiconductor Device
- Publication number 20200044064
- Publication date Feb 6, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20200027949
- Publication date Jan 23, 2020
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Arrangement
- Publication number 20190393334
- Publication date Dec 26, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Manufacturing Method Therefor
- Publication number 20190051647
- Publication date Feb 14, 2019
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Electrostatic Discharge Protection S...
- Publication number 20180301537
- Publication date Oct 18, 2018
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Trench Structure
- Publication number 20180301553
- Publication date Oct 18, 2018
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Gate Contact Structure
- Publication number 20180269296
- Publication date Sep 20, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20180096985
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming a Semiconductor Device
- Publication number 20180090479
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Electrostatic Discharge Protection S...
- Publication number 20180061823
- Publication date Mar 1, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Field Dielectric in an Edge Area
- Publication number 20170373140
- Publication date Dec 28, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20170271319
- Publication date Sep 21, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Markus Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Pillar Regions of Differen...
- Publication number 20170148872
- Publication date May 25, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Electrostatic Discharge Protection...
- Publication number 20160351557
- Publication date Dec 1, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Diode at Least Partly Arranged in...
- Publication number 20160307885
- Publication date Oct 20, 2016
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Electrostatic Discharge Protection...
- Publication number 20160307884
- Publication date Oct 20, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20160197142
- Publication date Jul 7, 2016
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Controlling Breakdown Voltage of a Diode Having a Semicon...
- Publication number 20160093747
- Publication date Mar 31, 2016
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Alternating N-Type and P-T...
- Publication number 20160064554
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation Structure and Manufacturing Therefor
- Publication number 20150380542
- Publication date Dec 31, 2015
- Infineon Technologies Austria AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS

Joachim Weyers

Person

Patents Grantslast 30 patents

Power semiconductor device having vertically parallel p-n layers fo...

Silicon carbide device with transistor cell and clamp regions in a...

Silicon carbide device with transistor cell and clamp region

Short circuit protection structure in MOS-gated power devices

Semiconductor die

Semiconductor device with sensor for crack detection

Semiconductor device having an electrostatic discharge protection s...

Method for producing a semiconductor arrangement

Method of manufacturing a semiconductor device

Semiconductor device comprising a trench structure

Semiconductor device and a manufacturing method therefor

Semiconductor device including a gate contact structure

VDMOS having a drift zone with a compensation structure

Semiconductor device having an electrostatic discharge protection s...

Semiconductor devices and methods for forming a semiconductor device

Semiconductor device

Semiconductor device comprising electrostatic discharge protection...

Semiconductor device including a diode at least partly arranged in...

Field-effect semiconductor device having pillar regions of differen...

VDMOS having a non-depletable extension zone formed between an acti...

Semiconductor device, electronic circuit and method for switching h...

Semiconductor device with electrostatic discharge protection structure

Semiconductor device including magnetically coupled monolithic inte...

Field-effect semiconductor device having alternating n-type and p-t...

Method of controlling breakdown voltage of a diode having a semicon...

Half-bridge circuit with a low-side transistor and a level shifter...

Semiconductor device comprising electrostatic discharge protection...

Method for manufacturing a semiconductor device

Semiconductor device including a diode arranged in a trench

Field-effect semiconductor device and manufacturing therefor

Patents Applicationslast 30 patents

Semiconductor Device with Compensation Structure

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

SEMICONDUCTOR DIODE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE WITH SENSE ELEMENT

SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...

Short Circuit Protection Structure in MOS-Gated Power Devices

Semiconductor Device

Semiconductor Die

Gate Contact Structure for a Semiconductor Device

Semiconductor Device with Compensation Structure

Method for Producing a Semiconductor Arrangement

Semiconductor Device and a Manufacturing Method Therefor

Semiconductor Device Having an Electrostatic Discharge Protection S...

Semiconductor Device Comprising a Trench Structure

Semiconductor Device Including a Gate Contact Structure

Method of Manufacturing a Semiconductor Device

Semiconductor Devices and Methods for Forming a Semiconductor Device

Semiconductor Device Having an Electrostatic Discharge Protection S...

Semiconductor Device with Field Dielectric in an Edge Area

Semiconductor Device

Field-Effect Semiconductor Device Having Pillar Regions of Differen...

Semiconductor Device Comprising Electrostatic Discharge Protection...

Semiconductor Device Including a Diode at Least Partly Arranged in...

Semiconductor Device Comprising Electrostatic Discharge Protection...

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Method of Controlling Breakdown Voltage of a Diode Having a Semicon...

Field-Effect Semiconductor Device Having Alternating N-Type and P-T...

Charge Compensation Structure and Manufacturing Therefor