TREA

Joanna Chaw Yane Yin

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  • Hsinchu City, TW
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Patents Grantslast 30 patents

  • Information Patent Grant

    Method of fabricating a FinFET device
    • Patent number 12,033,898
    • Issue date Jul 9, 2024
    • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Contact structure of a semiconductor device
    • Patent number 11,854,875
    • Issue date Dec 26, 2023
    • Taiwan Semiconductor Manufacturing Co., Ltd
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Method of fabricating a semiconductor device having a liner layer w...
    • Patent number 11,545,390
    • Issue date Jan 3, 2023
    • Taiwan Semiconductor Manufacturing Co., Ltd
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device having a liner layer with a configured profile
    • Patent number 11,217,477
    • Issue date Jan 4, 2022
    • Taiwan Semiconductor Manufacturing Co., Ltd
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    FinFET device
    • Patent number 10,978,352
    • Issue date Apr 13, 2021
    • Taiwan Semiconductor Manufacturing Company, Ltd
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Semiconductor device having a liner layer with a configured profile...
    • Patent number 10,720,358
    • Issue date Jul 21, 2020
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Method of fabricating a FinFET device
    • Patent number 10,546,786
    • Issue date Jan 28, 2020
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    FinFET device
    • Patent number 10,062,614
    • Issue date Aug 28, 2018
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    FinFET device
    • Patent number 9,805,984
    • Issue date Oct 31, 2017
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Method of making a FinFET device
    • Patent number 9,659,810
    • Issue date May 23, 2017
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Method of making a FinFET device
    • Patent number 8,697,515
    • Issue date Apr 15, 2014
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

  • Information Patent Application

    METHOD OF FABRICATING A FINFET DEVICE
    • Publication number 20240347390
    • Publication date Oct 17, 2024
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE
    • Publication number 20240096697
    • Publication date Mar 21, 2024
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE
    • Publication number 20220277993
    • Publication date Sep 1, 2022
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF FABRICATING A FINFET DEVICE
    • Publication number 20210305102
    • Publication date Sep 30, 2021
    • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A LINER LAYER W...
    • Publication number 20200350205
    • Publication date Nov 5, 2020
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    FINFET DEVICE
    • Publication number 20200144130
    • Publication date May 7, 2020
    • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE HAVING A LINER LAYER WITH A CONFIGURED PROFILE
    • Publication number 20200098625
    • Publication date Mar 26, 2020
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF FABRICATING A FINFET DEVICE
    • Publication number 20190057908
    • Publication date Feb 21, 2019
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    SEMICONDUCTOR DEVICE HAVING A LINER LAYER WITH A CONFIGURED PROFILE...
    • Publication number 20190006235
    • Publication date Jan 3, 2019
    • Taiwan Semiconductor Manufacturing Co., Ltd.
    • Joanna Chaw Yane YIN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    FINFET DEVICE
    • Publication number 20180012809
    • Publication date Jan 11, 2018
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    FINFET DEVICE
    • Publication number 20170098582
    • Publication date Apr 6, 2017
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    Method of Making a FinFET Device
    • Publication number 20140291770
    • Publication date Oct 2, 2014
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna Chaw Yane Yin
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF MAKING A FINFET DEVICE
    • Publication number 20130330889
    • Publication date Dec 12, 2013
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Joanna ChawYane Yin
    • H01 - BASIC ELECTRIC ELEMENTS