Johannes G. Bednorz

Person

Wolfhausen, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Superconductive compounds having high transition temperature, and m...
- Patent number 8,688,181
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Johannes Georg Bednorz
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Superconductive compounds having high transition temperature, and m...
- Patent number 8,060,169
- Issue date Nov 15, 2011
- International Business Machines Corporation
- Johannes Georg Bednorz
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Non-volatile resistance switching memory
- Patent number 7,897,411
- Issue date Mar 1, 2011
- International Business Machines Corporation
- Rolf Allenspach
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable-resistance memory cell
- Patent number 7,872,901
- Issue date Jan 18, 2011
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Grant
Data storage device
- Patent number 7,848,213
- Issue date Dec 7, 2010
- International Business Machines Corporation
- Peter Baechtold
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable-resistance memory cell
- Patent number 7,834,339
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage device
- Patent number 7,787,350
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Peter Baechtold
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable non-volatile resistance switching device
- Patent number 7,465,952
- Issue date Dec 16, 2008
- International Business Machines Corporation
- Santos F. Alvarado
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced programming performance in a nonvolatile memory device hav...
- Patent number 7,376,006
- Issue date May 20, 2008
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory architecture employing bipolar programmable res...
- Patent number 7,324,366
- Issue date Jan 29, 2008
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Grant
Tailored insulator properties for devices
- Patent number 6,717,199
- Issue date Apr 6, 2004
- International Business Machines Corporation
- Robert Benjamin Laibowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tailored insulator properties for devices
- Patent number 6,593,181
- Issue date Jul 15, 2003
- International Business Machines Corporation
- Robert Benjamin Laibowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing thin films by multi-layer deposition
- Patent number 5,648,321
- Issue date Jul 15, 1997
- International Business Machines Corporation
- Johannes Georg Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing lattice-matched substrates for high-T.sub....
- Patent number 5,602,080
- Issue date Feb 11, 1997
- International Business Machines Corporation
- Johannes G. Bednorz
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superconductive-channel electric field-effect drive
- Patent number 5,528,052
- Issue date Jun 18, 1996
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconducting field-effect transistors with inverted MISFET struc...
- Patent number 5,382,565
- Issue date Jan 17, 1995
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconducting field-effect transistors with inverted MISFET struc...
- Patent number 5,376,569
- Issue date Dec 27, 1994
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a superconducting field-effect transistor with in...
- Patent number 5,278,136
- Issue date Jan 11, 1994
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-emission scanning auger electron microscope
- Patent number 4,698,502
- Issue date Oct 6, 1987
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light waveguide with a submicron aperture, method for manufacturing...
- Patent number 4,684,206
- Issue date Aug 4, 1987
- International Business Machines Corporation
- Johannes G. Bednorz
- G02 - OPTICS
Information Patent Grant
Vacuum transfer device
- Patent number 4,643,627
- Issue date Feb 17, 1987
- International Business Machines Corporation
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezoelectric stepping rotator
- Patent number 4,600,854
- Issue date Jul 15, 1986
- International Business Machines Corp.
- Johannes G. Bednorz
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Piezoelectric x-y-positioner
- Patent number 4,520,570
- Issue date Jun 4, 1985
- International Business Machines Corporation
- Johannes G. Bednorz
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
Data Storage Device
- Publication number 20080316905
- Publication date Dec 25, 2008
- Peter Baechtold
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Non-Volatile Resistance Switching Device
- Publication number 20080164455
- Publication date Jul 10, 2008
- International Business Machines Corporation
- Santos F. Alvarado
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable-Resistance Memory Cell
- Publication number 20080152932
- Publication date Jun 26, 2008
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE-RESISTANCE MEMORY CELL
- Publication number 20080142925
- Publication date Jun 19, 2008
- Johannes G. Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE
- Publication number 20080011996
- Publication date Jan 17, 2008
- Johannes Georg Bednorz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced Programming Performance in a Nonvolatile Memory Device Hav...
- Publication number 20070274125
- Publication date Nov 29, 2007
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory architecture employing bipolar programmable res...
- Publication number 20070247893
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Application
Enhanced programming performance in a nonvolatile memory device hav...
- Publication number 20060256611
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Johannes Georg Bednorz
- G11 - INFORMATION STORAGE
Information Patent Application
Data storage device
- Publication number 20060187803
- Publication date Aug 24, 2006
- International Business Machines Corporation
- Peter Baechtold
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable non-volatile resistance switching device
- Publication number 20060071272
- Publication date Apr 6, 2006
- International Business Machines Corporation
- Santos F. Alvarado
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile resistance switching memory
- Publication number 20050260839
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Rolf Allenspach
- G11 - INFORMATION STORAGE
Information Patent Application
Tailored insulator properties for devices
- Publication number 20030209745
- Publication date Nov 13, 2003
- International Business Machines Corporation
- Robert Benjamin Laibowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tailored insulator properties for devices
- Publication number 20020153549
- Publication date Oct 24, 2002
- Robert Benjamin Laibowitz
- H01 - BASIC ELECTRIC ELEMENTS

Johannes G. Bednorz

Person

Patents Grantslast 30 patents

Superconductive compounds having high transition temperature, and m...

Superconductive compounds having high transition temperature, and m...

Non-volatile resistance switching memory

Programmable-resistance memory cell

Data storage device

Programmable-resistance memory cell

Data storage device

Programmable non-volatile resistance switching device

Enhanced programming performance in a nonvolatile memory device hav...

Non-volatile memory architecture employing bipolar programmable res...

Tailored insulator properties for devices

Tailored insulator properties for devices

Process for manufacturing thin films by multi-layer deposition

Method for manufacturing lattice-matched substrates for high-T.sub....

Superconductive-channel electric field-effect drive

Superconducting field-effect transistors with inverted MISFET struc...

Superconducting field-effect transistors with inverted MISFET struc...

Method for making a superconducting field-effect transistor with in...

Field-emission scanning auger electron microscope

Light waveguide with a submicron aperture, method for manufacturing...

Vacuum transfer device

Piezoelectric stepping rotator

Piezoelectric x-y-positioner

Patents Applicationslast 30 patents

Data Storage Device

Programmable Non-Volatile Resistance Switching Device

Programmable-Resistance Memory Cell

PROGRAMMABLE-RESISTANCE MEMORY CELL

MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE

Enhanced Programming Performance in a Nonvolatile Memory Device Hav...

Non-volatile memory architecture employing bipolar programmable res...

Enhanced programming performance in a nonvolatile memory device hav...

Data storage device

Programmable non-volatile resistance switching device

Non-volatile resistance switching memory

Tailored insulator properties for devices

Tailored insulator properties for devices