Johannes Georg Laven

Person

Taufkirchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,764,296
- Issue date Sep 19, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductor channel region and a se...
- Patent number 11,721,689
- Issue date Aug 8, 2023
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 11,682,700
- Issue date Jun 20, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a power semiconductor device
- Patent number 11,594,621
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode with structured barrier region
- Patent number 11,538,906
- Issue date Dec 27, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overload current carrying capability
- Patent number 11,410,989
- Issue date Aug 9, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT with an IGBT section and a diode section
- Patent number 11,398,472
- Issue date Jul 26, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with surge current protection
- Patent number 11,394,194
- Issue date Jul 19, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 11,342,187
- Issue date May 24, 2022
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing a semiconductor d...
- Patent number 11,171,230
- Issue date Nov 9, 2021
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,133,380
- Issue date Sep 28, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor arrangement comprising semic...
- Patent number 11,133,303
- Issue date Sep 28, 2021
- Infineon Technologies AG
- Christian Robert Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a semiconductor device having a desaturation ch...
- Patent number 11,121,242
- Issue date Sep 14, 2021
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an IGBT region and a non-switchable diode...
- Patent number 11,081,481
- Issue date Aug 3, 2021
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reliably verifiable p-contact and m...
- Patent number 11,018,051
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 10,978,560
- Issue date Apr 13, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having a barrier region
- Patent number 10,930,772
- Issue date Feb 23, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having trench electrodes biased at three...
- Patent number 10,910,487
- Issue date Feb 2, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,903,344
- Issue date Jan 26, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric assembly including an insulated gate bipolar transistor de...
- Patent number 10,886,909
- Issue date Jan 5, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,854,739
- Issue date Dec 1, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20230307499
- Publication date Sep 28, 2023
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Barrier Region
- Publication number 20230207673
- Publication date Jun 29, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR CHANNEL REGION AND A SE...
- Publication number 20220367443
- Publication date Nov 17, 2022
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20220029013
- Publication date Jan 27, 2022
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20210376069
- Publication date Dec 2, 2021
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with p-contact
- Publication number 20210272843
- Publication date Sep 2, 2021
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20210210604
- Publication date Jul 8, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT with an IGBT Section and a Diode Section
- Publication number 20210083081
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode with Structured Barrier Region
- Publication number 20210083051
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Power Semiconductor Device
- Publication number 20210050436
- Publication date Feb 18, 2021
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Semiconductor Arrangement Comprising Semic...
- Publication number 20200388612
- Publication date Dec 10, 2020
- Christian Robert Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Semiconductor Device Having a Desaturation Ch...
- Publication number 20200335613
- Publication date Oct 22, 2020
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Overload Current Carrying Capability
- Publication number 20200243509
- Publication date Jul 30, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Superjunction Device
- Publication number 20200243340
- Publication date Jul 30, 2020
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20200235232
- Publication date Jul 23, 2020
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Stripe-Shaped Cell Trench Structures and...
- Publication number 20200227518
- Publication date Jul 16, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Surge Current Protection
- Publication number 20200185906
- Publication date Jun 11, 2020
- Johannes Georg Laven
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Semiconductor Device with an IGBT Region and a Non-Switchable Diode...
- Publication number 20200083216
- Publication date Mar 12, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Reliably Verifiable p-contact and M...
- Publication number 20200066579
- Publication date Feb 27, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having a Barrier Region
- Publication number 20200006539
- Publication date Jan 2, 2020
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20190319122
- Publication date Oct 17, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20190319092
- Publication date Oct 17, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability and Low Gate Charge
- Publication number 20190305087
- Publication date Oct 3, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A SEMICONDUCTOR DEVICE USING TILTED REACTIVE IO...
- Publication number 20190295848
- Publication date Sep 26, 2019
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Separation Regions
- Publication number 20190288094
- Publication date Sep 19, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Splitting Semiconductor Devices and Semiconductor Device
- Publication number 20190221481
- Publication date Jul 18, 2019
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Semiconductor Device Having a Desaturation Ch...
- Publication number 20190198649
- Publication date Jun 27, 2019
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Johannes Georg Laven

Person

Patents Grantslast 30 patents

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor device having a barrier region

Power semiconductor device with p-contact and doped insulation bloc...

Diode structure of a power semiconductor device

Method for manufacturing a semiconductor device

Semiconductor device having a semiconductor channel region and a se...

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor switch having a cross-trench structure

Method of processing a power semiconductor device

IGBT with dV/dt controllability

Power semiconductor switch having a cross-trench structure

Diode with structured barrier region

Semiconductor device having overload current carrying capability

RC IGBT with an IGBT section and a diode section

Semiconductor device with surge current protection

Method for producing a superjunction device

Semiconductor device and method for manufacturing a semiconductor d...

Diode structure of a power semiconductor device

Semiconductor device and semiconductor arrangement comprising semic...

Method of operating a semiconductor device having a desaturation ch...

Semiconductor device with an IGBT region and a non-switchable diode...

Power semiconductor device having a cross-trench arrangement

Power semiconductor device with reliably verifiable p-contact and m...

Power semiconductor device with dV/dt controllability and low gate...

IGBT having a barrier region

Power semiconductor device having trench electrodes biased at three...

Semiconductor device with separation regions

Electric assembly including an insulated gate bipolar transistor de...

Method for producing IGBT with dV/dt controllability

IGBT with dV/dt controllability

Patents Applicationslast 30 patents

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Power Semiconductor Device Having a Barrier Region

SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR CHANNEL REGION AND A SE...

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Diode Structure of a Power Semiconductor Device

Power Semiconductor Switch Having a Cross-Trench Structure

Power Semiconductor Device with p-contact

Power Semiconductor Device with dV/dt Controllability and Low Gate...

RC IGBT with an IGBT Section and a Diode Section

Diode with Structured Barrier Region

Method of Processing a Power Semiconductor Device

IGBT with dV/dt Controllability

Semiconductor Device and Semiconductor Arrangement Comprising Semic...

Method of Operating a Semiconductor Device Having a Desaturation Ch...

Semiconductor Device Having Overload Current Carrying Capability

Method for Producing a Superjunction Device

Method for Producing IGBT with dV/dt Controllability

Semiconductor Device with Stripe-Shaped Cell Trench Structures and...

Semiconductor Device with Surge Current Protection

Semiconductor Device with an IGBT Region and a Non-Switchable Diode...

Power Semiconductor Device with Reliably Verifiable p-contact and M...

IGBT Having a Barrier Region

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

Diode Structure of a Power Semiconductor Device

IGBT with dV/dt Controllability and Low Gate Charge

METHODS FOR FORMING A SEMICONDUCTOR DEVICE USING TILTED REACTIVE IO...

Semiconductor Device with Separation Regions

Power Semiconductor Device Having a Cross-Trench Arrangement

Methods for Splitting Semiconductor Devices and Semiconductor Device

Method of Operating a Semiconductor Device Having a Desaturation Ch...