Johannes M. van Meer

Person

Middleton, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Directional etch for improved dual deck three-dimensional NAND arch...
- Patent number 12,096,622
- Issue date Sep 17, 2024
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bottom implant and airgap isolation for nanosheet semiconductor dev...
- Patent number 11,948,832
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device cavity formation using directional deposition
- Patent number 11,942,361
- Issue date Mar 26, 2024
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wordline contact formation in NAND devices
- Patent number 11,778,832
- Issue date Oct 3, 2023
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a 2-dimensional channel material, using ion impla...
- Patent number 11,626,284
- Issue date Apr 11, 2023
- Applied Materials, Inc.
- Keith T. Wong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Enhanced etch resistance for insulator layers implanted with low en...
- Patent number 11,424,164
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation with angled etch and deposition
- Patent number 11,217,491
- Issue date Jan 4, 2022
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric fin trimming for fins of FinFET device
- Patent number 11,205,593
- Issue date Dec 21, 2021
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming fin device having improved fin liner
- Patent number 10,971,403
- Issue date Apr 6, 2021
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor device having fin cut regions
- Patent number 10,720,357
- Issue date Jul 21, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin damage reduction during punch through implantation of FinFET de...
- Patent number 10,692,775
- Issue date Jun 23, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin damage reduction during punch through implantation of FinFET de...
- Patent number 10,686,033
- Issue date Jun 16, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for power rail in a fin type field effect transistor
- Patent number 10,685,865
- Issue date Jun 16, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for shallow trench isolation in a fin type field...
- Patent number 10,629,741
- Issue date Apr 21, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming device having etch-resistant isolation oxide
- Patent number 10,510,870
- Issue date Dec 17, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming fin device having improved fin liner
- Patent number 10,510,610
- Issue date Dec 17, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation with angled etch and deposition
- Patent number 10,403,552
- Issue date Sep 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Critical dimensions variance compensation
- Patent number 10,269,663
- Issue date Apr 23, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Morgan D. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming isolation structures in a substrate
- Patent number 10,090,166
- Issue date Oct 2, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES
- Publication number 20240404887
- Publication date Dec 5, 2024
- Applied Materials, Inc.
- Yan ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON AND BORON IMPLANTATION FOR BACKSIDE CHEMICAL MECHANICAL PLAN...
- Publication number 20240266175
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION
- Publication number 20240049443
- Publication date Feb 8, 2024
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL DEVICE FORMATION USING EARLY REMOVAL OF SACRIFICI...
- Publication number 20230369453
- Publication date Nov 16, 2023
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION PROCESS TO FORM PUNCH THROUGH STOPPER
- Publication number 20230187210
- Publication date Jun 15, 2023
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECTIONAL ETCH FOR IMPROVED DUAL DECK THREE-DIMENSIONAL NAND ARCH...
- Publication number 20230119618
- Publication date Apr 20, 2023
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- B82 - NANO-TECHNOLOGY
Information Patent Application
BOTTOM IMPLANT AND AIRGAP ISOLATION FOR NANOSHEET SEMICONDUCTOR DEV...
- Publication number 20230089482
- Publication date Mar 23, 2023
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CAVITY FORMATION USING DIRECTIONAL DEPOSITION
- Publication number 20220399225
- Publication date Dec 15, 2022
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORDLINE CONTACT FORMATION IN NAND DEVICES
- Publication number 20220352182
- Publication date Nov 3, 2022
- Applied Materials, Inc.
- Armin Saeedi Vahdat
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING A 2-DIMENSIONAL CHANNEL MATERIAL USING ION IMPLAN...
- Publication number 20220108886
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Keith T. Wong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ENHANCED ETCH RESISTANCE FOR INSULATOR LAYERS IMPLANTED WITH LOW EN...
- Publication number 20220068715
- Publication date Mar 3, 2022
- Applied Materials, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FIN TRIMMING FOR FINS OF FINFET DEVICE
- Publication number 20210366776
- Publication date Nov 25, 2021
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS HAVING IMPROVED ACTIVATION
- Publication number 20210119022
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Jae Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...
- Publication number 20200152519
- Publication date May 14, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...
- Publication number 20200152735
- Publication date May 14, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR SHALLOW TRENCH ISOLATION IN A FIN TYPE FIELD...
- Publication number 20200135928
- Publication date Apr 30, 2020
- Applied Materials, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER
- Publication number 20200135573
- Publication date Apr 30, 2020
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE FORMATION WITH ANGLED ETCH AND DEPOSITION
- Publication number 20190341315
- Publication date Nov 7, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER
- Publication number 20190304841
- Publication date Oct 3, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTOR DEVICE HAVING FIN CUT REGIONS
- Publication number 20190273011
- Publication date Sep 5, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING DEVICE HAVING IMPROVED ISOLATION OXIDE
- Publication number 20190259859
- Publication date Aug 22, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRITICAL DIMENSIONS VARIANCE COMPENSATION
- Publication number 20180197796
- Publication date Jul 12, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Morgan D. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING ISOLATION STRUCTURES IN A SUBSTRATE
- Publication number 20180197747
- Publication date Jul 12, 2018
- Varian Semiconductor Equipment Associates, Inc.
- Andrew Michael Waite
- H01 - BASIC ELECTRIC ELEMENTS

Johannes M. van Meer

Person

Patents Grantslast 30 patents

Directional etch for improved dual deck three-dimensional NAND arch...

Bottom implant and airgap isolation for nanosheet semiconductor dev...

Semiconductor device cavity formation using directional deposition

Wordline contact formation in NAND devices

Method of forming a 2-dimensional channel material, using ion impla...

Enhanced etch resistance for insulator layers implanted with low en...

Replacement gate formation with angled etch and deposition

Asymmetric fin trimming for fins of FinFET device

Structure and method of forming fin device having improved fin liner

Method of forming transistor device having fin cut regions

Fin damage reduction during punch through implantation of FinFET de...

Fin damage reduction during punch through implantation of FinFET de...

Method and device for power rail in a fin type field effect transistor

Method and device for shallow trench isolation in a fin type field...

Techniques for forming device having etch-resistant isolation oxide

Structure and method of forming fin device having improved fin liner

Replacement gate formation with angled etch and deposition

Critical dimensions variance compensation

Techniques for forming isolation structures in a substrate

Patents Applicationslast 30 patents

HIGH-TEMPERATURE IMPLANT FOR GATE-ALL-AROUND DEVICES

CARBON AND BORON IMPLANTATION FOR BACKSIDE CHEMICAL MECHANICAL PLAN...

DEVICES AND METHODS FOR DRAM LEAKAGE REDUCTION

THREE DIMENSIONAL DEVICE FORMATION USING EARLY REMOVAL OF SACRIFICI...

ION IMPLANTATION PROCESS TO FORM PUNCH THROUGH STOPPER

DIRECTIONAL ETCH FOR IMPROVED DUAL DECK THREE-DIMENSIONAL NAND ARCH...

BOTTOM IMPLANT AND AIRGAP ISOLATION FOR NANOSHEET SEMICONDUCTOR DEV...

SEMICONDUCTOR DEVICE CAVITY FORMATION USING DIRECTIONAL DEPOSITION

WORDLINE CONTACT FORMATION IN NAND DEVICES

METHOD OF FORMING A 2-DIMENSIONAL CHANNEL MATERIAL USING ION IMPLAN...

ENHANCED ETCH RESISTANCE FOR INSULATOR LAYERS IMPLANTED WITH LOW EN...

ASYMMETRIC FIN TRIMMING FOR FINS OF FINFET DEVICE

METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS HAVING IMPROVED ACTIVATION

FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...

FIN DAMAGE REDUCTION DURING PUNCH THROUGH IMPLANTATION OF FINFET DE...

METHOD AND DEVICE FOR SHALLOW TRENCH ISOLATION IN A FIN TYPE FIELD...

STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER

REPLACEMENT GATE FORMATION WITH ANGLED ETCH AND DEPOSITION

STRUCTURE AND METHOD OF FORMING FIN DEVICE HAVING IMPROVED FIN LINER

METHOD OF FORMING TRANSISTOR DEVICE HAVING FIN CUT REGIONS

STRUCTURE AND METHOD OF FORMING DEVICE HAVING IMPROVED ISOLATION OXIDE

CRITICAL DIMENSIONS VARIANCE COMPENSATION

TECHNIQUES FOR FORMING ISOLATION STRUCTURES IN A SUBSTRATE