John A. Ott

Person

Greenwood Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electron channeling pattern acquisition from small crystalline areas
- Patent number 11,003,942
- Issue date May 11, 2021
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electrochemical switching device with protective encapsulation
- Patent number 10,902,912
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Jianshi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM with high-aspect ratio bottom electrode
- Patent number 10,840,433
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an anode structure containing a porous region
- Patent number 10,833,311
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,755,925
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of FinFET junction
- Patent number 10,658,513
- Issue date May 19, 2020
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,460,937
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post growth heteroepitaxial layer separation for defect reduction i...
- Patent number 10,453,683
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron channeling pattern acquisition from small crystalline areas
- Patent number 10,417,519
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selective epitaxy using epitaxy-prevention layers
- Patent number 10,388,522
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of FinFET junction
- Patent number 10,236,384
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron channeling pattern acquisition from small crystalline areas
- Patent number 10,127,649
- Issue date Nov 13, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming high-germanium content silicon germanium alloy fi...
- Patent number 10,109,737
- Issue date Oct 23, 2018
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-destructive, wafer scale method to evaluate defect density in h...
- Patent number 9,984,941
- Issue date May 29, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Post growth defect reduction for heteroepitaxial materials
- Patent number 9,972,688
- Issue date May 15, 2018
- International Business Machines Corporation
- John A. Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy using epitaxy-prevention layers
- Patent number 9,947,533
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer for high performing and low light degraded solar cells
- Patent number 9,917,220
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Augustin J. Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of FinFET junction
- Patent number 9,865,737
- Issue date Jan 9, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked strained and strain-relaxed hexagonal nanowires
- Patent number 9,859,367
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatic alignment for high throughput electron channeling contras...
- Patent number 9,859,091
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High germanium content silicon germanium fins
- Patent number 9,812,530
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked strained and strain-relaxed hexagonal nanowires
- Patent number 9,761,661
- Issue date Sep 12, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-beam electron microscope for electron channeling contrast ima...
- Patent number 9,741,532
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatic defect detection and classification for high throughput e...
- Patent number 9,739,728
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming high-germanium content silicon germanium alloy fi...
- Patent number 9,680,018
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization free gallium nitride-based photonic devices on nanopat...
- Patent number 9,608,160
- Issue date Mar 28, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material and device deposition on graphene terminat...
- Patent number 9,574,287
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Can Bayram
- C30 - CRYSTAL GROWTH
Information Patent Grant
Post growth defect reduction for heteroepitaxial materials
- Patent number 9,553,153
- Issue date Jan 24, 2017
- International Business Machines Corporation
- John A. Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy using epitaxy-prevention layers
- Patent number 9,530,643
- Issue date Dec 27, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked strained and strain-relaxed hexagonal nanowires
- Patent number 9,496,263
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ALUMINUM OXIDE PROTECED LITHIUM METAL TUNABLE 3D SILICON BATTERIES
- Publication number 20210399275
- Publication date Dec 23, 2021
- International Business Machines Corporation
- John Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENERGY STORAGE METHOD USING ALUMINUM OXIDE PROTECED LITHIUM METAL T...
- Publication number 20210399346
- Publication date Dec 23, 2021
- International Business Machines Corporation
- John Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROCHEMICAL SWITCHING DEVICE WITH PROTECTIVE ENCAPSULATION
- Publication number 20200395069
- Publication date Dec 17, 2020
- International Business Machines Corporation
- Jianshi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM WITH HIGH-ASPECT RATIO BOTTOM ELECTRODE
- Publication number 20200220068
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING AN ANODE STRUCTURE CONTAINING A POROUS REGION
- Publication number 20200014018
- Publication date Jan 9, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20190341250
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS
- Publication number 20190318193
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20190157458
- Publication date May 23, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277367
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...
- Publication number 20180277368
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS
- Publication number 20180218900
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS
- Publication number 20180211378
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS
- Publication number 20180211376
- Publication date Jul 26, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20180108778
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED WET CELL
- Publication number 20180003694
- Publication date Jan 4, 2018
- International Business Machines Corporation
- John A. Ott
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
AUTOMATIC ALIGNMENT FOR HIGH THROUGHPUT ELECTRON CHANNELING CONTRAS...
- Publication number 20170365441
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF FORMING HIGH-GERMANIUM CONTENT SILICON GERMANIUM ALLOY FI...
- Publication number 20170271502
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST GROWTH DEFECT REDUCTION FOR HETEROEPITAXIAL MATERIALS
- Publication number 20170162657
- Publication date Jun 8, 2017
- International Business Machines Corporation
- JOHN A. OTT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED STRAINED AND STRAIN-RELAXED HEXAGONAL NANOWIRES
- Publication number 20170117361
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED STRAINED AND STRAIN-RELAXED HEXAGONAL NANOWIRES
- Publication number 20170117360
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH-GERMANIUM CONTENT SILICON GERMANIUM ALLOY FI...
- Publication number 20170084731
- Publication date Mar 23, 2017
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS
- Publication number 20170053796
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20160276483
- Publication date Sep 22, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-DESTRUCTIVE, WAFER SCALE METHOD TO EVALUATE DEFECT DENSITY IN H...
- Publication number 20160276228
- Publication date Sep 22, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS
- Publication number 20160268128
- Publication date Sep 15, 2016
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH...
- Publication number 20160225641
- Publication date Aug 4, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER FOR HIGH PERFORMING AND LOW LIGHT DEGRADED SOLAR CELLS
- Publication number 20160204290
- Publication date Jul 14, 2016
- International Business Machines Corporation
- AUGUSTIN J. HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS
- Publication number 20160197147
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS
- Publication number 20160071956
- Publication date Mar 10, 2016
- International Business Machine Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SP...
- Publication number 20150179428
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS

John A. Ott

Person

Patents Grantslast 30 patents

Electron channeling pattern acquisition from small crystalline areas

Electrochemical switching device with protective encapsulation

MRAM with high-aspect ratio bottom electrode

Method of making an anode structure containing a porous region

Post growth heteroepitaxial layer separation for defect reduction i...

Formation of FinFET junction

Post growth heteroepitaxial layer separation for defect reduction i...

Post growth heteroepitaxial layer separation for defect reduction i...

Electron channeling pattern acquisition from small crystalline areas

Selective epitaxy using epitaxy-prevention layers

Formation of FinFET junction

Electron channeling pattern acquisition from small crystalline areas

Method of forming high-germanium content silicon germanium alloy fi...

Non-destructive, wafer scale method to evaluate defect density in h...

Post growth defect reduction for heteroepitaxial materials

Selective epitaxy using epitaxy-prevention layers

Buffer layer for high performing and low light degraded solar cells

Formation of FinFET junction

Stacked strained and strain-relaxed hexagonal nanowires

Automatic alignment for high throughput electron channeling contras...

High germanium content silicon germanium fins

Stacked strained and strain-relaxed hexagonal nanowires

Multi-beam electron microscope for electron channeling contrast ima...

Automatic defect detection and classification for high throughput e...

Method of forming high-germanium content silicon germanium alloy fi...

Polarization free gallium nitride-based photonic devices on nanopat...

Gallium nitride material and device deposition on graphene terminat...

Post growth defect reduction for heteroepitaxial materials

Selective epitaxy using epitaxy-prevention layers

Stacked strained and strain-relaxed hexagonal nanowires

Patents Applicationslast 30 patents

ALUMINUM OXIDE PROTECED LITHIUM METAL TUNABLE 3D SILICON BATTERIES

ENERGY STORAGE METHOD USING ALUMINUM OXIDE PROTECED LITHIUM METAL T...

ELECTROCHEMICAL SWITCHING DEVICE WITH PROTECTIVE ENCAPSULATION

MRAM WITH HIGH-ASPECT RATIO BOTTOM ELECTRODE

METHOD OF MAKING AN ANODE STRUCTURE CONTAINING A POROUS REGION

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS

FORMATION OF FINFET JUNCTION

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION I...

SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS

ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS

ELECTRON CHANNELING PATTERN ACQUISITION FROM SMALL CRYSTALLINE AREAS

FORMATION OF FINFET JUNCTION

ISOLATED WET CELL

AUTOMATIC ALIGNMENT FOR HIGH THROUGHPUT ELECTRON CHANNELING CONTRAS...

METHOD OF FORMING HIGH-GERMANIUM CONTENT SILICON GERMANIUM ALLOY FI...

POST GROWTH DEFECT REDUCTION FOR HETEROEPITAXIAL MATERIALS

STACKED STRAINED AND STRAIN-RELAXED HEXAGONAL NANOWIRES

STACKED STRAINED AND STRAIN-RELAXED HEXAGONAL NANOWIRES

METHOD OF FORMING HIGH-GERMANIUM CONTENT SILICON GERMANIUM ALLOY FI...

SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS

FORMATION OF FINFET JUNCTION

NON-DESTRUCTIVE, WAFER SCALE METHOD TO EVALUATE DEFECT DENSITY IN H...

SELECTIVE EPITAXY USING EPITAXY-PREVENTION LAYERS

DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH...

BUFFER LAYER FOR HIGH PERFORMING AND LOW LIGHT DEGRADED SOLAR CELLS

HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS

HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS

CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SP...