John B. Campi, JR.

Person

Westford, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low trigger voltage electrostatic discharge NFET in triple well CMO...
- Patent number 8,350,329
- Issue date Jan 8, 2013
- International Business Machines Corporation
- John B. Campi, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical NPNP structure in a triple well CMOS process
- Patent number 8,299,533
- Issue date Oct 30, 2012
- International Business Machines Corporation
- John B. Campi, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate depletion mode MOSFET
- Patent number 7,902,606
- Issue date Mar 8, 2011
- International Business Machines Corporation
- John B. Campi, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL NPNP STRUCTURE IN A TRIPLE WELL CMOS PROCESS
- Publication number 20130009207
- Publication date Jan 10, 2013
- International Business Machines Corporation
- John B. Campi, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCR/MOS CLAMP FOR ESD PROTECTION OF INTEGRATED CIRCUITS
- Publication number 20120305984
- Publication date Dec 6, 2012
- International Business Machines Corporation
- John B. Campi, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical NPNP Structure In a Triple Well CMOS Process
- Publication number 20120126285
- Publication date May 24, 2012
- International Business Machines Corporation
- John B. Campi, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low trigger voltage electrostatic discharge NFET in triple well CMO...
- Publication number 20120091530
- Publication date Apr 19, 2012
- International Business Machines Corporation
- John B. Campi, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Controlled Rectifier Based Electrostatic Discharge Protecti...
- Publication number 20110286135
- Publication date Nov 24, 2011
- International Business Machines Corporation
- John B. CAMPI, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE DEPLETION MODE MOSFET
- Publication number 20110117711
- Publication date May 19, 2011
- International Business Machines Corporation
- John B. Campi, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST ESD PROTECTION CIRCUIT, METHOD AND DESIGN STRUCTURE FOR TOLE...
- Publication number 20100265622
- Publication date Oct 21, 2010
- International Business Machines Corporation
- John B. CAMPI, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Overstress Protection Circuit
- Publication number 20100246076
- Publication date Sep 30, 2010
- International Business Machines Corporation
- John B. Campi, JR.
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DOUBLE GATE DEPLETION MODE MOSFET
- Publication number 20090179272
- Publication date Jul 16, 2009
- John B. Campi, JR.
- H01 - BASIC ELECTRIC ELEMENTS

John B. Campi, JR.

Person

Patents Grantslast 30 patents

Low trigger voltage electrostatic discharge NFET in triple well CMO...

Vertical NPNP structure in a triple well CMOS process

Double gate depletion mode MOSFET

Patents Applicationslast 30 patents

VERTICAL NPNP STRUCTURE IN A TRIPLE WELL CMOS PROCESS

SCR/MOS CLAMP FOR ESD PROTECTION OF INTEGRATED CIRCUITS

Vertical NPNP Structure In a Triple Well CMOS Process

Low trigger voltage electrostatic discharge NFET in triple well CMO...

Silicon Controlled Rectifier Based Electrostatic Discharge Protecti...

DOUBLE GATE DEPLETION MODE MOSFET

ROBUST ESD PROTECTION CIRCUIT, METHOD AND DESIGN STRUCTURE FOR TOLE...

Electrical Overstress Protection Circuit

DOUBLE GATE DEPLETION MODE MOSFET