John Bradley Boos

Person

Springfield, VA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strained InGaAs quantum wells for complementary transistors
- Patent number 9,054,169
- Issue date Jun 9, 2015
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low-resistivity p-type GaSb quantum wells
- Patent number 9,006,708
- Issue date Apr 14, 2015
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antimonide-based compound semiconductor with titanium tungsten stack
- Patent number 8,927,354
- Issue date Jan 6, 2015
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained InGaAs quantum wells for complementary transistors
- Patent number 8,884,265
- Issue date Nov 11, 2014
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n- and p-channel field effect transistors with single quantum well...
- Patent number 8,652,959
- Issue date Feb 18, 2014
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N- and p-channel field-effect transistors with single quantum well...
- Patent number 8,461,664
- Issue date Jun 11, 2013
- The United States of America, as represented by the Secretary of the Navy
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antimonide-based compound semiconductor with titanium tungsten stack
- Patent number 8,421,121
- Issue date Apr 16, 2013
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction for use as an RF mixer from GHZ to THZ frequencies
- Patent number 8,076,700
- Issue date Dec 13, 2011
- The United States of America as represented by the Secretary of the Navy
- Richard Magno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors
- Patent number 7,635,879
- Issue date Dec 22, 2009
- The United States of America as represented by the Secretary of the Navy
- John Bradley Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors with Sb-based channels
- Patent number 7,388,235
- Issue date Jun 17, 2008
- The United States of America as represented by the Secretary of the Navy
- John Bradley Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metalization of electronic semiconductor devices
- Patent number 6,448,648
- Issue date Sep 10, 2002
- The United States of America as represented by the Secretary of the Navy
- John Bradley Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified InAs hall elements
- Patent number 6,316,124
- Issue date Nov 13, 2001
- The United States of America as represented by the Secretary of the Navy
- John Bradley Boos
- B32 - LAYERED PRODUCTS
Information Patent Grant
Electronic devices with InAlAsSb/AlSb barrier
- Patent number 5,798,540
- Issue date Aug 25, 1998
- The United States of America as represented by the Secretary of the Navy
- John Bradley Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing InP junction FETS and junction HEMTS using...
- Patent number 5,196,358
- Issue date Mar 23, 1993
- The United States of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TiW diffusion barrier for AuZn ohmic contact to P-Type InP
- Patent number 5,015,603
- Issue date May 14, 1991
- The United States of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic multichannel detector amplifier arrays and circuit channels
- Patent number 4,924,285
- Issue date May 8, 1990
- The United States of America as represented by the Secretary of the Navy
- Gordon W. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
- Patent number 4,816,881
- Issue date Mar 28, 1989
- United State of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VACUUM TRANSISTOR STRUCTURE USING GRAPHENE EDGE FIELD EMITTER AND S...
- Publication number 20170012103
- Publication date Jan 12, 2017
- The Government of the United States of America, as represented by the Secreta...
- Jonathan L. Shaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained InGaAs Quantum Wells for Complementary Transistors
- Publication number 20150014745
- Publication date Jan 15, 2015
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic...
- Publication number 20140339501
- Publication date Nov 20, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained InGaAs Quantum Wells for Complementary Transistors
- Publication number 20140264278
- Publication date Sep 18, 2014
- The Government of the United States of America, as represented by the Secreta...
- Brian R. Bennett
- B82 - NANO-TECHNOLOGY
Information Patent Application
Low-Resistivity p-Type GaSb Quantum Wells
- Publication number 20140217363
- Publication date Aug 7, 2014
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR WITH TITANIUM TUNGSTEN STACK
- Publication number 20130210219
- Publication date Aug 15, 2013
- Yeong-Chang CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n- and p-Channel Field Effect Transistors with Single Quantum Well...
- Publication number 20130149845
- Publication date Jun 13, 2013
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-and P-Channel Field-Effect Transistors with Single Quantum Well f...
- Publication number 20110297916
- Publication date Dec 8, 2011
- THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
- Brian R. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies
- Publication number 20090302352
- Publication date Dec 10, 2009
- The Government of the United States of America, as represenied by the Secreta...
- Richard Magno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Antimonide-based compound semiconductor with titanium tungsten stack
- Publication number 20080258176
- Publication date Oct 23, 2008
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electron mobility transistors with Sb-based channels
- Publication number 20060076577
- Publication date Apr 13, 2006
- John Bradley Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors
- Publication number 20060065952
- Publication date Mar 30, 2006
- John Bradley Boos
- H01 - BASIC ELECTRIC ELEMENTS

John Bradley Boos

Person

Patents Grantslast 30 patents

Strained InGaAs quantum wells for complementary transistors

Low-resistivity p-type GaSb quantum wells

Antimonide-based compound semiconductor with titanium tungsten stack

Strained InGaAs quantum wells for complementary transistors

n- and p-channel field effect transistors with single quantum well...

N- and p-channel field-effect transistors with single quantum well...

Antimonide-based compound semiconductor with titanium tungsten stack

P-N junction for use as an RF mixer from GHZ to THZ frequencies

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors

High electron mobility transistors with Sb-based channels

Metalization of electronic semiconductor devices

Modified InAs hall elements

Electronic devices with InAlAsSb/AlSb barrier

Method of manufacturing InP junction FETS and junction HEMTS using...

TiW diffusion barrier for AuZn ohmic contact to P-Type InP

Monolithic multichannel detector amplifier arrays and circuit channels

A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

Patents Applicationslast 30 patents

VACUUM TRANSISTOR STRUCTURE USING GRAPHENE EDGE FIELD EMITTER AND S...

Strained InGaAs Quantum Wells for Complementary Transistors

Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic...

Strained InGaAs Quantum Wells for Complementary Transistors

Low-Resistivity p-Type GaSb Quantum Wells

ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR WITH TITANIUM TUNGSTEN STACK

n- and p-Channel Field Effect Transistors with Single Quantum Well...

N-and P-Channel Field-Effect Transistors with Single Quantum Well f...

P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies

Antimonide-based compound semiconductor with titanium tungsten stack

High electron mobility transistors with Sb-based channels

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors