John Chen

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Power regulating unit and transport refrigeration device using the...
- Patent number 11,955,902
- Issue date Apr 9, 2024
- Carrier Corporation
- Yiming Wen
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Strained-induced mobility enhancement nano-device structure and int...
- Patent number 9,048,300
- Issue date Jun 2, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dual energy implantation for ultra-shallow junction form...
- Patent number 9,024,281
- Issue date May 5, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium and polysilicon gate structure for strained silic...
- Patent number 8,551,831
- Issue date Oct 8, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Wei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dual energy implantation for ultra-shallow junction form...
- Patent number 8,466,050
- Issue date Jun 18, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure using a pure silicon dioxide hardmask for gate...
- Patent number 8,106,423
- Issue date Jan 31, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly gate etch method and device for sonos-based flash memory
- Patent number 8,030,165
- Issue date Oct 4, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal hard mask method and structure for strained silicon MOS trans...
- Patent number 7,709,336
- Issue date May 4, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian J. Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for second spacer formation for strained silic...
- Patent number 7,591,659
- Issue date Sep 22, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and structure using a hard mask for strained silicon...
- Patent number 7,557,000
- Issue date Jul 7, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure using a pure silicon dioxide hardmask for gate...
- Patent number 7,425,488
- Issue date Sep 16, 2008
- Semiconductor Manufacturing International (Shanghai)
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS device for high voltage operation and method of manufacture
- Patent number 7,335,543
- Issue date Feb 26, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER REGULATING UNIT AND TRANSPORT REFRIGERATION DEVICE USING THE...
- Publication number 20220038023
- Publication date Feb 3, 2022
- Carrier Corporation
- Yiming Wen
- F25 - REFRIGERATION OR COOLING COMBINED HEATING AND REFRIGERATION SYSTEMS HEA...
Information Patent Application
METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...
- Publication number 20130264491
- Publication date Oct 10, 2013
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-Induced Mobility Enhancement Nano-Device Structure and Int...
- Publication number 20130109142
- Publication date May 2, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED-INDUCED MOBILITY ENHANCEMENT NANO-DEVICE STRUCTURE AND INT...
- Publication number 20120164803
- Publication date Jun 28, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...
- Publication number 20110143512
- Publication date Jun 16, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- HANMING WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLY GATE ETCH METHOD AND DEVICE FOR SONOS-BASED FLASH MEMORY
- Publication number 20090291550
- Publication date Nov 26, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Germanium and Polysilicon Gate Structure for Strained Silic...
- Publication number 20090152599
- Publication date Jun 18, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Wei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure using a pure silicon dioxide hardmask for gate...
- Publication number 20090065805
- Publication date Mar 12, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPI...
- Publication number 20080173941
- Publication date Jul 24, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Bei Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...
- Publication number 20080119032
- Publication date May 22, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-situ doped silicon germanium and silicon carbide source drain re...
- Publication number 20070196992
- Publication date Aug 23, 2007
- Semiconductor Manufacturing Int'l (Shanghai) Corporation
- Mo Hong Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for second spacer formation for strained silic...
- Publication number 20070077716
- Publication date Apr 5, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-induced mobility enhancement nano-device structure and int...
- Publication number 20070072376
- Publication date Mar 29, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure using a pure silicon dioxide hardmask for gate...
- Publication number 20070063221
- Publication date Mar 22, 2007
- Semiconductor Manufacturing Int'l (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal hard mask method and structure for strained silicon MOS trans...
- Publication number 20060194395
- Publication date Aug 31, 2006
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian J. Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS device for high voltage operation and method of manufacture
- Publication number 20050287753
- Publication date Dec 29, 2005
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Power regulating unit and transport refrigeration device using the...

Strained-induced mobility enhancement nano-device structure and int...

Method for dual energy implantation for ultra-shallow junction form...

Silicon germanium and polysilicon gate structure for strained silic...

Method for dual energy implantation for ultra-shallow junction form...

Method and structure using a pure silicon dioxide hardmask for gate...

Poly gate etch method and device for sonos-based flash memory

Metal hard mask method and structure for strained silicon MOS trans...

Method and structure for second spacer formation for strained silic...

Etching method and structure using a hard mask for strained silicon...

Method and structure using a pure silicon dioxide hardmask for gate...

MOS device for high voltage operation and method of manufacture

Patents Applicationslast 30 patents

POWER REGULATING UNIT AND TRANSPORT REFRIGERATION DEVICE USING THE...

METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...

Strained-Induced Mobility Enhancement Nano-Device Structure and Int...

STRAINED-INDUCED MOBILITY ENHANCEMENT NANO-DEVICE STRUCTURE AND INT...

METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...

POLY GATE ETCH METHOD AND DEVICE FOR SONOS-BASED FLASH MEMORY

Silicon Germanium and Polysilicon Gate Structure for Strained Silic...

Method and structure using a pure silicon dioxide hardmask for gate...

ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPI...

ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...

In-situ doped silicon germanium and silicon carbide source drain re...

Method and structure for second spacer formation for strained silic...

Strained-induced mobility enhancement nano-device structure and int...

Method and structure using a pure silicon dioxide hardmask for gate...

Metal hard mask method and structure for strained silicon MOS trans...

MOS device for high voltage operation and method of manufacture