John Claassen Roberts

Person

Hillsborough, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride semiconductor structures comprising low atomic mass spe...
- Patent number 10,211,294
- Issue date Feb 19, 2019
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation via back side implantation
- Patent number 9,799,520
- Issue date Oct 24, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor structures comprising spatially patterned...
- Patent number 9,773,898
- Issue date Sep 26, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation via reaction with active species
- Patent number 9,704,705
- Issue date Jul 11, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation using rare-earth oxide and/or rare-ear...
- Patent number 9,673,281
- Issue date Jun 6, 2017
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation in III-nitride material semiconductor...
- Patent number 9,627,473
- Issue date Apr 18, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 8,748,298
- Issue date Jun 10, 2014
- International Rectifier Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride materials including low dislocation densities and metho...
- Patent number 8,368,117
- Issue date Feb 5, 2013
- International Rectifier Corporation
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride material processing and related device structures
- Patent number 8,343,824
- Issue date Jan 1, 2013
- International Rectifier Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,994,540
- Issue date Aug 9, 2011
- International Rectifier Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material structures including substrates and method...
- Patent number 7,791,106
- Issue date Sep 7, 2010
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride materials including low dislocation densities and metho...
- Patent number 7,687,827
- Issue date Mar 30, 2010
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,569,871
- Issue date Aug 4, 2009
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material structures including substrates and method...
- Patent number 7,365,374
- Issue date Apr 29, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 7,352,015
- Issue date Apr 1, 2008
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,352,016
- Issue date Apr 1, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 7,339,205
- Issue date Mar 4, 2008
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride material structures including silicon substrates
- Patent number 7,247,889
- Issue date Jul 24, 2007
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,135,720
- Issue date Nov 14, 2006
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES
- Publication number 20190013196
- Publication date Jan 10, 2019
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION
- Publication number 20180158685
- Publication date Jun 7, 2018
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...
- Publication number 20180122928
- Publication date May 3, 2018
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...
- Publication number 20180026098
- Publication date Jan 25, 2018
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...
- Publication number 20170069742
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...
- Publication number 20170069746
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...
- Publication number 20170069713
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTO...
- Publication number 20170069500
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING ALUMINUM NITRIDE DIFFUSION BARRI...
- Publication number 20170069716
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...
- Publication number 20170069717
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING LOW ATOMIC MASS SPE...
- Publication number 20170069720
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING
- Publication number 20170069744
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES
- Publication number 20170069484
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION
- Publication number 20170069743
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHO...
- Publication number 20100295056
- Publication date Nov 25, 2010
- Nitronex Corporation
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20100019850
- Publication date Jan 28, 2010
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL PROCESSING AND RELATED DEVICE STRUCTURES
- Publication number 20090267188
- Publication date Oct 29, 2009
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20080246058
- Publication date Oct 9, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME
- Publication number 20080200013
- Publication date Aug 21, 2008
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME
- Publication number 20080182393
- Publication date Jul 31, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL STRUCTURES INCLUDING SUBSTRATES AND METHOD...
- Publication number 20080116456
- Publication date May 22, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20070120147
- Publication date May 31, 2007
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material structures including substrates and method...
- Publication number 20060249748
- Publication date Nov 9, 2006
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-nitride material structures including silicon substrates
- Publication number 20060118819
- Publication date Jun 8, 2006
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-nitride materials including low dislocation densities and metho...
- Publication number 20060006500
- Publication date Jan 12, 2006
- Nitronex Corporation
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride materials and methods associated with the same
- Publication number 20050285142
- Publication date Dec 29, 2005
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride materials and methods associated with the same
- Publication number 20050285141
- Publication date Dec 29, 2005
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20050167775
- Publication date Aug 4, 2005
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material structures including isolation regions and...
- Publication number 20050145851
- Publication date Jul 7, 2005
- Nitronex Corporation
- Jerry W. Johnson
- H01 - BASIC ELECTRIC ELEMENTS

John Claassen Roberts

Person

Patents Grantslast 30 patents

III-nitride semiconductor structures comprising low atomic mass spe...

Parasitic channel mitigation via back side implantation

III-nitride semiconductor structures comprising spatially patterned...

Parasitic channel mitigation via reaction with active species

Parasitic channel mitigation using rare-earth oxide and/or rare-ear...

Parasitic channel mitigation in III-nitride material semiconductor...

Gallium nitride materials and methods associated with the same

III-nitride materials including low dislocation densities and metho...

Gallium nitride material processing and related device structures

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

III-nitride materials including low dislocation densities and metho...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

Gallium nitride materials and methods associated with the same

Gallium nitride material transistors and methods associated with th...

Gallium nitride materials and methods associated with the same

III-nitride material structures including silicon substrates

Gallium nitride material transistors and methods associated with th...

Patents Applicationslast 30 patents

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES

PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...

PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...

PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...

PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...

METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTO...

PARASITIC CHANNEL MITIGATION USING ALUMINUM NITRIDE DIFFUSION BARRI...

PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING LOW ATOMIC MASS SPE...

PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING

PARASITIC CHANNEL MITIGATION VIA REACTION WITH ACTIVE SPECIES

PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION

III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHO...

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

GALLIUM NITRIDE MATERIAL PROCESSING AND RELATED DEVICE STRUCTURES

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME

GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME

GALLIUM NITRIDE MATERIAL STRUCTURES INCLUDING SUBSTRATES AND METHOD...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

III-nitride material structures including silicon substrates

III-nitride materials including low dislocation densities and metho...

Gallium nitride materials and methods associated with the same

Gallium nitride materials and methods associated with the same

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including isolation regions and...