John E. Amato

Person

Tracy, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked dual chip package having leveling projections
- Patent number 9,165,866
- Issue date Oct 20, 2015
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked dual chip package and method of fabrication
- Patent number 8,581,376
- Issue date Nov 12, 2013
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a trench MOSFET device with improved on-resistance
- Patent number 7,094,640
- Issue date Aug 22, 2006
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench DMOS device with improved drain contact
- Patent number 7,049,194
- Issue date May 23, 2006
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET device with polycrystalline silicon source contact st...
- Patent number 7,015,125
- Issue date Mar 21, 2006
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming narrow trenches in semiconductor substrates
- Patent number 6,977,203
- Issue date Dec 20, 2005
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET device with polycrystalline silicon source contact st...
- Patent number 6,822,288
- Issue date Nov 23, 2004
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench DMOS device with improved drain contact
- Patent number 6,657,255
- Issue date Dec 2, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET device with improved on-resistance
- Patent number 6,657,254
- Issue date Dec 2, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trench MOSFET device with low parasitic resistance
- Patent number 6,645,815
- Issue date Nov 11, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit resistant to the formation of cracks in a passiv...
- Patent number 6,630,402
- Issue date Oct 7, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench schottky barrier rectifier and method of making the same
- Patent number 6,558,984
- Issue date May 6, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench schottky barrier rectifier and method of making the same
- Patent number 6,420,768
- Issue date Jul 16, 2002
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED DUAL CHIP PACKAGE HAVING LEVELING PROJECTIONS
- Publication number 20140054758
- Publication date Feb 27, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DUAL CHIP PACKAGE AND METHOD OF FABRICATION
- Publication number 20110227207
- Publication date Sep 22, 2011
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET device with polycrystalline silicon source contact st...
- Publication number 20050062075
- Publication date Mar 24, 2005
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for improving the gate resistance of a closed...
- Publication number 20050040459
- Publication date Feb 24, 2005
- John E. Amato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET device with improved on-resistance
- Publication number 20040113203
- Publication date Jun 17, 2004
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench DMOS device with improved drain contact
- Publication number 20040108554
- Publication date Jun 10, 2004
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET device with polycrystalline silicon source contact st...
- Publication number 20030107080
- Publication date Jun 12, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming trench MOSFET device with low parasitic resistance
- Publication number 20030096480
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET device with improved on-resistance
- Publication number 20030094624
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit resistant to the formation of cracks in a passiv...
- Publication number 20030096461
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming narrow trenches in semiconductor substrates
- Publication number 20030096479
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench DMOS device with improved drain contact
- Publication number 20030080351
- Publication date May 1, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SCHOTTKY BARRIER RECTIFIER AND METHOD OF MAKING THE SAME
- Publication number 20020074613
- Publication date Jun 20, 2002
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench schottky barrier rectifier and method of making the same
- Publication number 20020074578
- Publication date Jun 20, 2002
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

John E. Amato

Person

Patents Grantslast 30 patents

Stacked dual chip package having leveling projections

Stacked dual chip package and method of fabrication

Method of making a trench MOSFET device with improved on-resistance

Trench DMOS device with improved drain contact

Trench MOSFET device with polycrystalline silicon source contact st...

Method of forming narrow trenches in semiconductor substrates

Trench MOSFET device with polycrystalline silicon source contact st...

Trench DMOS device with improved drain contact

Trench MOSFET device with improved on-resistance

Method for forming trench MOSFET device with low parasitic resistance

Integrated circuit resistant to the formation of cracks in a passiv...

Trench schottky barrier rectifier and method of making the same

Trench schottky barrier rectifier and method of making the same

Patents Applicationslast 30 patents

STACKED DUAL CHIP PACKAGE HAVING LEVELING PROJECTIONS

STACKED DUAL CHIP PACKAGE AND METHOD OF FABRICATION

Trench MOSFET device with polycrystalline silicon source contact st...

Method and structure for improving the gate resistance of a closed...

Trench MOSFET device with improved on-resistance

Trench DMOS device with improved drain contact

Trench MOSFET device with polycrystalline silicon source contact st...

Method for forming trench MOSFET device with low parasitic resistance

Trench MOSFET device with improved on-resistance

Integrated circuit resistant to the formation of cracks in a passiv...

Method of forming narrow trenches in semiconductor substrates

Trench DMOS device with improved drain contact

TRENCH SCHOTTKY BARRIER RECTIFIER AND METHOD OF MAKING THE SAME

Trench schottky barrier rectifier and method of making the same