John E. Davey

Person

Alexandria, VA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making self-aligned GaAs/AlGaAs FET's
- Patent number 4,927,782
- Issue date May 22, 1990
- The United States of America as represented by the Secretary of the Navy
- John E. Davey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gaas fet with low 1/f noise
- Patent number 4,888,626
- Issue date Dec 19, 1989
- The United States of America as represented by the Secretary of the Navy
- John E. Davey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnett diode and method of making
- Patent number H29
- Issue date Mar 4, 1986
- The Government of the United States
- Aristos Christou
- 357 -
Information Patent Grant
Refractory passivated ion-implanted GaAs ohmic contacts
- Patent number 4,330,343
- Issue date May 18, 1982
- The United States of America as represented by the Secretary of the Navy
- Aristos Christou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-barrier-height epitaxial Ge-GaAs mixer diode
- Patent number 4,316,201
- Issue date Feb 16, 1982
- The United States of America as represented by the Secretary of the Navy
- Aristos Christou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-implanted evaporated germanium layers as n.sup.+ contacts to GaAs
- Patent number 4,298,403
- Issue date Nov 3, 1981
- John E. Davey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor encapsulant for annealing ion-implanted GaAs
- Patent number 4,267,014
- Issue date May 12, 1981
- The United States of America as represented by the Secretary of the Navy
- John E. Davey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
- Patent number 4,263,605
- Issue date Apr 21, 1981
- The United States of America as represented by the Secretary of the Navy
- Aristos Christou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial growth of GaAs films and devices configuration...
- Patent number 4,226,649
- Issue date Oct 7, 1980
- The United States of America as represented by the Secretary of the Navy
- John E. Davey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for group III-V n-type semiconductors using epitaxia...
- Patent number 4,188,710
- Issue date Feb 19, 1980
- The United States of America as represented by the Secretary of the Navy
- John E. Davey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming uniform stress-free thin films
- Patent number 3,962,485
- Issue date Jun 8, 1976
- The United States of America as represented by the Secretary of the Navy
- Gordon Wood Anderson
- H01 - BASIC ELECTRIC ELEMENTS

John E. Davey

Person

Patents Grantslast 30 patents

Method of making self-aligned GaAs/AlGaAs FET's

Self-aligned gaas fet with low 1/f noise

Tunnett diode and method of making

Refractory passivated ion-implanted GaAs ohmic contacts

Low-barrier-height epitaxial Ge-GaAs mixer diode

Ion-implanted evaporated germanium layers as n.sup.+ contacts to GaAs

Semiconductor encapsulant for annealing ion-implanted GaAs

Ion-implanted, improved ohmic contacts for GaAs semiconductor devices

Method for epitaxial growth of GaAs films and devices configuration...

Ohmic contacts for group III-V n-type semiconductors using epitaxia...

Method for forming uniform stress-free thin films