John E. Epler

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Cupertino, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Buried reverse bias junction configurations in semiconductor struct...
- Patent number 5,563,094
- Issue date Oct 8, 1996
- Xerox Corporation
- Thomas L. Paoli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structures via photo induced ev...
- Patent number 5,436,192
- Issue date Jul 25, 1995
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of in situ stoiciometric and geometrical photo induced modif...
- Patent number H1264
- Issue date Dec 7, 1993
- Xerox Corporation
- John E. Epler
- 437 -
Information Patent Grant
Buried disordering sources in semiconductor structures employing ph...
- Patent number 5,013,684
- Issue date May 7, 1991
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of in situ photo induced evaporation enhancement of compound...
- Patent number 4,962,057
- Issue date Oct 9, 1990
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Energy beam induced layer disordering (EBILD)
- Patent number 4,771,010
- Issue date Sep 13, 1988
- Xerox Corporation
- John E. Epler
- H01 - BASIC ELECTRIC ELEMENTS