John G. Pellerin

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement metal gate transistors with reduced gate oxide leakage
- Patent number 8,753,943
- Issue date Jun 17, 2014
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate transistors with reduced gate oxide leakage
- Patent number 8,445,975
- Issue date May 21, 2013
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate transistors with reduced gate oxide leakage
- Patent number 8,053,849
- Issue date Nov 8, 2011
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having long and short channel metal gate devices...
- Patent number 7,902,599
- Issue date Mar 8, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit long and short channel metal gate devices and me...
- Patent number 7,723,192
- Issue date May 25, 2010
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-operational mode transistor with multiple-channel device stru...
- Patent number 7,544,572
- Issue date Jun 9, 2009
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-power multiple-channel fully depleted quantum well CMOSFETs
- Patent number 7,253,484
- Issue date Aug 7, 2007
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor arrangement with reduced field-to...
- Patent number 7,223,698
- Issue date May 29, 2007
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing STI divot formation during semiconductor device...
- Patent number 7,091,106
- Issue date Aug 15, 2006
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate transistor with metal-rich silicon layer and...
- Patent number 7,091,118
- Issue date Aug 15, 2006
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-power multiple-channel fully depleted quantum well CMOSFETs
- Patent number 7,074,657
- Issue date Jul 11, 2006
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride offset spacer to minimize silicon recess by using poly reox...
- Patent number 6,780,776
- Issue date Aug 24, 2004
- Advanced Micro Devices, Inc.
- Wen-Jie Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with different silicon thicknesses
- Patent number 6,764,917
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- Darin A. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce parasitic capacitance of MOS transistors
- Patent number 6,713,357
- Issue date Mar 30, 2004
- Advanced Micro Devices, Inc.
- Hai Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having an enhanced width dimension and a method o...
- Patent number 6,580,122
- Issue date Jun 17, 2003
- Advanced Micro Devices, Inc.
- Derick J. Wristers
- G01 - MEASURING TESTING
Information Patent Grant
Method of controlling junction recesses in a semiconductor device
- Patent number 6,406,964
- Issue date Jun 18, 2002
- Advanced Micro Devices, Inc.
- Derick J. Wristers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of silicide formation by silicon pretreatment
- Patent number 6,399,493
- Issue date Jun 4, 2002
- Advanced Micro Devices, Inc.
- Robert Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for uniform scan dispensing of spin-on materials
- Patent number 6,317,642
- Issue date Nov 13, 2001
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making dual damascene conductive interconnections and int...
- Patent number 6,228,758
- Issue date May 8, 2001
- Advanced Micro Devices, Inc.
- John G. Pellerin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-reflective coating layer for semiconductor device
- Patent number 6,191,030
- Issue date Feb 20, 2001
- Advanced Micro Devices, Inc.
- Ramkumar Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-reflective coating layer for semiconductor device
- Patent number 5,986,344
- Issue date Nov 16, 1999
- Advanced Micro Devices, Inc.
- Ramkumar Subramanion
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE
- Publication number 20130244412
- Publication date Sep 19, 2013
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE
- Publication number 20120049196
- Publication date Mar 1, 2012
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES...
- Publication number 20100044782
- Publication date Feb 25, 2010
- Advanced Micro Devices, Inc.
- Richard J. CARTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT LONG AND SHORT CHANNEL METAL GATE DEVICES AND ME...
- Publication number 20090230463
- Publication date Sep 17, 2009
- Advanced Micro Devices, Inc.
- Richard J. CARTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-operational mode transistor with multiple-channel device stru...
- Publication number 20070122983
- Publication date May 31, 2007
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement metal gate transistors with reduced gate oxide leakage
- Publication number 20070102776
- Publication date May 10, 2007
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-power multiple-channel fully depleted quantum well CMOSFETs
- Publication number 20060278938
- Publication date Dec 14, 2006
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing STI divot formation during semiconductor device...
- Publication number 20050196928
- Publication date Sep 8, 2005
- Advanced Micro Devices, Inc.
- Douglas J. Bonser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-power multiple-channel fully depleted quantum well CMOSFETs
- Publication number 20050104140
- Publication date May 19, 2005
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming silicide contacts and device incorporation same
- Publication number 20020137268
- Publication date Sep 26, 2002
- John G. Pellerin
- H01 - BASIC ELECTRIC ELEMENTS

John G. Pellerin

Person

Patents Grantslast 30 patents

Replacement metal gate transistors with reduced gate oxide leakage

Replacement metal gate transistors with reduced gate oxide leakage

Replacement metal gate transistors with reduced gate oxide leakage

Integrated circuit having long and short channel metal gate devices...

Integrated circuit long and short channel metal gate devices and me...

Multi-operational mode transistor with multiple-channel device stru...

Low-power multiple-channel fully depleted quantum well CMOSFETs

Method of forming a semiconductor arrangement with reduced field-to...

Method of reducing STI divot formation during semiconductor device...

Replacement metal gate transistor with metal-rich silicon layer and...

Low-power multiple-channel fully depleted quantum well CMOSFETs

Nitride offset spacer to minimize silicon recess by using poly reox...

SOI device with different silicon thicknesses

Method to reduce parasitic capacitance of MOS transistors

Transistor device having an enhanced width dimension and a method o...

Method of controlling junction recesses in a semiconductor device

Method of silicide formation by silicon pretreatment

Apparatus and methods for uniform scan dispensing of spin-on materials

Method of making dual damascene conductive interconnections and int...

Anti-reflective coating layer for semiconductor device

Anti-reflective coating layer for semiconductor device

Patents Applicationslast 30 patents

REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE

REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE

INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES...

INTEGRATED CIRCUIT LONG AND SHORT CHANNEL METAL GATE DEVICES AND ME...

Multi-operational mode transistor with multiple-channel device stru...

Replacement metal gate transistors with reduced gate oxide leakage

Low-power multiple-channel fully depleted quantum well CMOSFETs

Method of reducing STI divot formation during semiconductor device...

Low-power multiple-channel fully depleted quantum well CMOSFETs

Method of forming silicide contacts and device incorporation same