John Kenneth Arch

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench intersections
- Patent number 12,218,188
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolator with reduced parasitic capacitance
- Patent number 11,869,933
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with segmented deep trench
- Patent number 11,626,317
- Issue date Apr 11, 2023
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor
- Patent number 11,587,864
- Issue date Feb 21, 2023
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor
- Patent number 11,222,841
- Issue date Jan 11, 2022
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolator with reduced parasitic capacitance
- Patent number 11,107,883
- Issue date Aug 31, 2021
- Texas Instruments Incorporated
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench intersections
- Patent number 11,101,342
- Issue date Aug 24, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolator with reduced parasitic capacitance
- Patent number 10,186,576
- Issue date Jan 22, 2019
- Texas Instruments Incorporated
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolator with reduced parasitic capacitance
- Patent number 9,806,148
- Issue date Oct 31, 2017
- Texas Instruments Incorporated
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for detecting epitaxial (EPI) induced buried layer shifts in...
- Patent number 7,112,953
- Issue date Sep 26, 2006
- Texas Instruments Incorporated
- Xinfen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with silicided gate and contacts
- Patent number 6,284,669
- Issue date Sep 4, 2001
- Texas Instruments Incorporated
- John P. Erdeljac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metalization outside protective overcoat for improved capacitors an...
- Patent number 6,284,617
- Issue date Sep 4, 2001
- Texas Instruments Incorporated
- John P. Erdeljac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization outside protective overcoat for improved capacitors a...
- Patent number 6,236,101
- Issue date May 22, 2001
- Texas Instruments Incorporated
- John P. Erdeljac
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRICAL CHARACTERIZATION OF MISALIGNMENT IN INTEGRATED CIRCUIT M...
- Publication number 20240290641
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH
- Publication number 20220130717
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CAPACITOR
- Publication number 20220093507
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Poornika FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATOR WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20210367030
- Publication date Nov 25, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH INTERSECTIONS
- Publication number 20210351269
- Publication date Nov 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH INTERSECTIONS
- Publication number 20210249505
- Publication date Aug 12, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CAPACITOR
- Publication number 20210074629
- Publication date Mar 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Poornika FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATOR WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20190148486
- Publication date May 16, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATOR WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20180026095
- Publication date Jan 25, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device Isolator with Reduced Parasitic Capacitance
- Publication number 20160300907
- Publication date Oct 13, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Raja Selvaraj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for detecting EPI induced buried layer shifts in semiconduct...
- Publication number 20060038553
- Publication date Feb 23, 2006
- Texas Instruments, Inc.
- Xinfen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field oxide profile of an isolation region associated with a contac...
- Publication number 20040150065
- Publication date Aug 5, 2004
- Der-E Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field oxide profile of an isolation region associated with a contac...
- Publication number 20040007755
- Publication date Jan 15, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Der-E Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metallization outside protective overcoat for improved capacitors a...
- Publication number 20010019865
- Publication date Sep 6, 2001
- John P. Erdeljac
- H01 - BASIC ELECTRIC ELEMENTS

John Kenneth Arch

Person

Patents Grantslast 30 patents

Deep trench intersections

Device isolator with reduced parasitic capacitance

Deep trench isolation with segmented deep trench

Stacked capacitor

Stacked capacitor

Device isolator with reduced parasitic capacitance

Deep trench intersections

Device isolator with reduced parasitic capacitance

Device isolator with reduced parasitic capacitance

Method for detecting epitaxial (EPI) induced buried layer shifts in...

Power transistor with silicided gate and contacts

Metalization outside protective overcoat for improved capacitors an...

Metallization outside protective overcoat for improved capacitors a...

Patents Applicationslast 30 patents

ELECTRICAL CHARACTERIZATION OF MISALIGNMENT IN INTEGRATED CIRCUIT M...

DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH

STACKED CAPACITOR

DEVICE ISOLATOR WITH REDUCED PARASITIC CAPACITANCE

DEEP TRENCH INTERSECTIONS

DEEP TRENCH INTERSECTIONS

STACKED CAPACITOR

DEVICE ISOLATOR WITH REDUCED PARASITIC CAPACITANCE

DEVICE ISOLATOR WITH REDUCED PARASITIC CAPACITANCE

Device Isolator with Reduced Parasitic Capacitance

Method for detecting EPI induced buried layer shifts in semiconduct...

Field oxide profile of an isolation region associated with a contac...

Field oxide profile of an isolation region associated with a contac...

Metallization outside protective overcoat for improved capacitors a...