John Kevin Twynam

Person

Yamatokoriyama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Normally-off-type heterojunction field-effect transistor
- Patent number 9,269,801
- Issue date Feb 23, 2016
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device
- Patent number 8,766,275
- Issue date Jul 1, 2014
- Sharp Kabushiki Kaisha
- Naoyasu Iketani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,723,224
- Issue date May 13, 2014
- Sharp Kabushiki Kaisha
- Nobuyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,288,796
- Issue date Oct 16, 2012
- Sharp Kabushiki Kaisha
- Nobuyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 8,258,544
- Issue date Sep 4, 2012
- Sharp Kabushiki Kaisha
- Tetsuzo Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having recessed gate in compositional grade...
- Patent number 8,017,977
- Issue date Sep 13, 2011
- Sharp Kabushiki Kaisha
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,004,022
- Issue date Aug 23, 2011
- Sharp Kabushiki Kaisha
- Norimasa Yafune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,928,480
- Issue date Apr 19, 2011
- Sharp Kabushiki Kaisha
- Masaharu Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and heterojunction FET
- Patent number 7,893,461
- Issue date Feb 22, 2011
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching element and semiconductor circuit apparatus
- Patent number 7,759,760
- Issue date Jul 20, 2010
- Sharp Kabushiki Kaisha
- Norimasa Yafune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage clamp circuit and semiconductor device, overcurrent protect...
- Patent number 7,733,105
- Issue date Jun 8, 2010
- Sharp Kabushiki Kaisha
- Yoshiaki Nozaki
- G01 - MEASURING TESTING
Information Patent Grant
Insulated-gate field effect transistor
- Patent number 7,629,632
- Issue date Dec 8, 2009
- Sharp Kabushiki Kaisha
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and heterojunction FET
- Patent number 7,566,917
- Issue date Jul 28, 2009
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor FET
- Patent number 7,538,364
- Issue date May 26, 2009
- Sharp Kabushiki Kaisha
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 7,126,171
- Issue date Oct 24, 2006
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor capable of restraining the conduc...
- Patent number 6,611,008
- Issue date Aug 26, 2003
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transferred electron tetrode
- Patent number 6,566,694
- Issue date May 20, 2003
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor including collector/base heteroju...
- Patent number 6,399,969
- Issue date Jun 4, 2002
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method for producing the same
- Patent number 6,133,592
- Issue date Oct 17, 2000
- Sharp Kabushiki Kaisha
- Katsuhiko Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gunn diode having a graded aluminum gallium arsenide active layer a...
- Patent number 6,111,265
- Issue date Aug 29, 2000
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Ohmic electrode structure for In.sub.x Ga.sub.1-x As layer
- Patent number 6,037,663
- Issue date Mar 14, 2000
- Sharp Kabushiki Kaisha
- Motoji Yagura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction-type bipolar transistor with ballast resistance layer
- Patent number 5,721,437
- Issue date Feb 24, 1998
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor
- Patent number 5,719,415
- Issue date Feb 17, 1998
- Sharp Kabushiki Kaisha
- Motoji Yagura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having low electron and hole conc...
- Patent number 5,508,536
- Issue date Apr 16, 1996
- Sharp Kabushiki Kaisha
- John K. Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric-signal amplifying device using light transmission
- Patent number 5,216,538
- Issue date Jun 1, 1993
- Sharp Kabushiki Kaisha
- John K. Twynam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NORMALLY-OFF-TYPE HETEROJUNCTION FIELD-EFFECT TRANSISTOR
- Publication number 20140367742
- Publication date Dec 18, 2014
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF-TYPE HETEROJUNCTION FIELD-EFFECT TRANSISTOR
- Publication number 20130306984
- Publication date Nov 21, 2013
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130009166
- Publication date Jan 10, 2013
- Nobuyuki ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SEMICONDUCTOR DEVICE
- Publication number 20120292635
- Publication date Nov 22, 2012
- Naoyasu Iketani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20110133205
- Publication date Jun 9, 2011
- SHARP KABUSHIKI KAISHA
- Tetsuzo Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100314663
- Publication date Dec 16, 2010
- Nobuyuki ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR
- Publication number 20100308373
- Publication date Dec 9, 2010
- Tetsuzo Nagahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device and Heterojunction FET
- Publication number 20090250723
- Publication date Oct 8, 2009
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20090206373
- Publication date Aug 20, 2009
- Sharp Kabushiki Kaisha
- Norimasa YAFUNE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING A COMPOSITIONALLY GRADED LAYER
- Publication number 20080308843
- Publication date Dec 18, 2008
- SHARP KABUSHIKI KAISHA
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE CLAMP CIRCUIT AND SEMICONDUCTOR DEVICE, OVERCURRENT PROTECT...
- Publication number 20080309355
- Publication date Dec 18, 2008
- Yoshiaki Nozaki
- G01 - MEASURING TESTING
Information Patent Application
Insulated-gate field effect transistor
- Publication number 20080210988
- Publication date Sep 4, 2008
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rectifier
- Publication number 20080105902
- Publication date May 8, 2008
- Sharp Kabushiki Kaisha
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor switching element and semiconductor circuit apparatus
- Publication number 20080006898
- Publication date Jan 10, 2008
- SHARP KABUSHIKI KAISHA
- Norimasa Yafune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070152239
- Publication date Jul 5, 2007
- Sharp Kabushiki Kaisha
- Masaharu Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor
- Publication number 20070102727
- Publication date May 10, 2007
- SHARP KABUSHIKI KAISHA
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device and heterojunction FET
- Publication number 20060065911
- Publication date Mar 30, 2006
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Microwave band radio transmission device, microwave band radio rece...
- Publication number 20050227638
- Publication date Oct 13, 2005
- Sharp Kabushiki Kaisha
- Eiji Suematsu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Bipolar transistor
- Publication number 20050116319
- Publication date Jun 2, 2005
- Sharp Kabushiki Kaisha
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor FET
- Publication number 20040211976
- Publication date Oct 28, 2004
- Sharp Kabushiki Kaisha
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor capable of restraining the conduc...
- Publication number 20020088993
- Publication date Jul 11, 2002
- John K. Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device for milliwave band oscillation, fabricating me...
- Publication number 20020011604
- Publication date Jan 31, 2002
- Motoji Yagura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transferred electron tetrode
- Publication number 20020011605
- Publication date Jan 31, 2002
- John Kevin Twynam
- H01 - BASIC ELECTRIC ELEMENTS

John Kevin Twynam

Person

Patents Grantslast 30 patents

Normally-off-type heterojunction field-effect transistor

Composite semiconductor device

Semiconductor device

Semiconductor device

Field-effect transistor

Field effect transistor having recessed gate in compositional grade...

Field effect transistor

Semiconductor device

Electronic device and heterojunction FET

Semiconductor switching element and semiconductor circuit apparatus

Voltage clamp circuit and semiconductor device, overcurrent protect...

Insulated-gate field effect transistor

Electronic device and heterojunction FET

Compound semiconductor FET

Bipolar transistor

Heterojunction bipolar transistor capable of restraining the conduc...

Heterojunction bipolar transferred electron tetrode

Heterojunction bipolar transistor including collector/base heteroju...

Compound semiconductor device and method for producing the same

Gunn diode having a graded aluminum gallium arsenide active layer a...

Ohmic electrode structure for In.sub.x Ga.sub.1-x As layer

Heterojunction-type bipolar transistor with ballast resistance layer

Hetero-junction bipolar transistor

Heterojunction bipolar transistor having low electron and hole conc...

Electric-signal amplifying device using light transmission

Patents Applicationslast 30 patents

NORMALLY-OFF-TYPE HETEROJUNCTION FIELD-EFFECT TRANSISTOR

NORMALLY-OFF-TYPE HETEROJUNCTION FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

COMPOSITE SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR

Electronic Device and Heterojunction FET

FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR HAVING A COMPOSITIONALLY GRADED LAYER

VOLTAGE CLAMP CIRCUIT AND SEMICONDUCTOR DEVICE, OVERCURRENT PROTECT...

Insulated-gate field effect transistor

Rectifier

Semiconductor switching element and semiconductor circuit apparatus

Semiconductor device

Field-effect transistor

Electronic device and heterojunction FET

Microwave band radio transmission device, microwave band radio rece...

Bipolar transistor

Compound semiconductor FET

Heterojunction bipolar transistor capable of restraining the conduc...

Semiconductor device for milliwave band oscillation, fabricating me...

Heterojunction bipolar transferred electron tetrode