John Logan

Person

Lawrence, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strain compensated rare earth group III-nitride heterostructures
- Patent number 11,942,919
- Issue date Mar 26, 2024
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,594,627
- Issue date Feb 28, 2023
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high electron mobility transistors (HEMTs) having r...
- Patent number 11,545,566
- Issue date Jan 3, 2023
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode high electron mobility field effect transistor (HEMT...
- Patent number 11,362,190
- Issue date Jun 14, 2022
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having both enhancement mode group III-N hi...
- Patent number 11,101,378
- Issue date Aug 24, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
N-POLAR RARE-EARTH III-NITRIDE BULK ACOUSTIC WAVE RESONATOR
- Publication number 20230055905
- Publication date Feb 23, 2023
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
EPITAXIAL GROWTH OF ALUMINUM ON ALUMINUM-NITRIDE COMPOUNDS
- Publication number 20220368302
- Publication date Nov 17, 2022
- Raytheon Company
- John Andrew Logan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RARE-EARTH III-NITRIDE N-POLAR HEMT
- Publication number 20220262937
- Publication date Aug 18, 2022
- Raytheon Company
- John Andrew Logan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATED RARE EARTH GROUP III-NITRIDE HETEROSTRUCTURES
- Publication number 20220224306
- Publication date Jul 14, 2022
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT...
- Publication number 20210367055
- Publication date Nov 25, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20210351288
- Publication date Nov 11, 2021
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride High Electron Mobility Transistors (HEMTs) Having R...
- Publication number 20210202729
- Publication date Jul 1, 2021
- Raytheon Company
- Abbas Torabi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...
- Publication number 20200328296
- Publication date Oct 15, 2020
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Strain compensated rare earth group III-nitride heterostructures

Semiconductor structure having both enhancement mode group III-N hi...

Gallium nitride high electron mobility transistors (HEMTs) having r...

Depletion mode high electron mobility field effect transistor (HEMT...

Semiconductor structure having both enhancement mode group III-N hi...

Patents Applicationslast 30 patents

N-POLAR RARE-EARTH III-NITRIDE BULK ACOUSTIC WAVE RESONATOR

EPITAXIAL GROWTH OF ALUMINUM ON ALUMINUM-NITRIDE COMPOUNDS

RARE-EARTH III-NITRIDE N-POLAR HEMT

STRAIN COMPENSATED RARE EARTH GROUP III-NITRIDE HETEROSTRUCTURES

DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...

Gallium Nitride High Electron Mobility Transistors (HEMTs) Having R...

SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HI...