John M. Aitken

Person

South Brulington, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Neutralization of trapped charge in a charge accumulation layer of...
- Patent number 8,035,200
- Issue date Oct 11, 2011
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semiconductor device having radiation hardened insulator...
- Patent number 7,943,482
- Issue date May 17, 2011
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device having radiation harden...
- Patent number 7,935,609
- Issue date May 3, 2011
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change TaN resistor based triple-state/multi-state read only...
- Patent number 7,880,158
- Issue date Feb 1, 2011
- International Business Machines Corporation
- John M. Aitken
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor below the buried oxide of SOI CMOS technologies for prote...
- Patent number 7,791,169
- Issue date Sep 7, 2010
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for neutralizing trapped charge in a charge accumulation lay...
- Patent number 7,736,915
- Issue date Jun 15, 2010
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change TaN resistor based triple-state/multi-state read only...
- Patent number 7,715,248
- Issue date May 11, 2010
- International Business Machines Corporation
- John M. Aitken
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench type buried on-chip precision programmable resistor
- Patent number 7,601,602
- Issue date Oct 13, 2009
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor below the buried oxide of SOI CMOS technologies for prote...
- Patent number 7,388,274
- Issue date Jun 17, 2008
- International Business Machines Corporation
- John M Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change TaN resistor based triple-state/multi-state read only...
- Patent number 7,381,981
- Issue date Jun 3, 2008
- International Business Machines Corporation
- John M. Aitken
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor below the buried oxide of SOI CMOS technologies for prote...
- Patent number 7,315,075
- Issue date Jan 1, 2008
- International Business Machines Corporation
- John M Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench type buried on-chip precision programmable resistor
- Patent number 7,084,483
- Issue date Aug 1, 2006
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heater for annealing trapped charge in a semiconductor device
- Patent number 7,064,414
- Issue date Jun 20, 2006
- International Business Machines Corporation
- John M Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a capacitor on a substrate
- Patent number 6,352,902
- Issue date Mar 5, 2002
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes for reduced topography capacitors
- Patent number 6,333,239
- Issue date Dec 25, 2001
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator non-volatile random access memory device
- Patent number 6,252,275
- Issue date Jun 26, 2001
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and processes for reduced topography trench capacitors
- Patent number 6,159,787
- Issue date Dec 12, 2000
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for reduced topography capacitors
- Patent number 6,088,258
- Issue date Jul 11, 2000
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large scale IC personalization method employing air dielectric stru...
- Patent number 5,530,290
- Issue date Jun 25, 1996
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Larce scale IC personalization method employing air dielectric stru...
- Patent number 5,444,015
- Issue date Aug 22, 1995
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of Fabricating a micro-coaxial wiring structure
- Patent number 5,363,550
- Issue date Nov 15, 1994
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified silicon CMOS process having selectively deposited Si/SiGe...
- Patent number 5,268,324
- Issue date Dec 7, 1993
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHOTODETECTOR WITH WAVELENGTH DISCRIMINATION, AND METHOD FOR FORMIN...
- Publication number 20110068423
- Publication date Mar 24, 2011
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEUTRALIZATION OF TRAPPED CHARGE IN A CHARGE ACCUMULATION LAYER OF...
- Publication number 20100237475
- Publication date Sep 23, 2010
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING RADIATION HARDEN...
- Publication number 20100035393
- Publication date Feb 11, 2010
- John M. AITKEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING RADIATION HARDENED...
- Publication number 20100032795
- Publication date Feb 11, 2010
- John M. AITKEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY...
- Publication number 20080232159
- Publication date Sep 25, 2008
- International Business Machines Corporation
- John M. Aitken
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY...
- Publication number 20080197337
- Publication date Aug 21, 2008
- International Business Machines Corporation
- John M. Aitken
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR BELOW THE BURIED OXIDE OF SOI CMOS TECHNOLOGIES FOR PROTE...
- Publication number 20080191314
- Publication date Aug 14, 2008
- International Busines Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR BELOW THE BURIED OXIDE OF SOI CMOS TECHNOLOGIES FOR PROTE...
- Publication number 20070272961
- Publication date Nov 29, 2007
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE NEUTRALIZATION IN SEMICONDUCTOR STRUCTURES
- Publication number 20070195841
- Publication date Aug 23, 2007
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY...
- Publication number 20070023743
- Publication date Feb 1, 2007
- International Business Machines Corporation
- JOHN M. AITKEN
- G11 - INFORMATION STORAGE
Information Patent Application
Trench type buried on-chip precision programmable resistor
- Publication number 20060267144
- Publication date Nov 30, 2006
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR BELOW THE BURIED OXIDE OF SOI CMOS TECHNOLOGIES FOR PROTE...
- Publication number 20060163635
- Publication date Jul 27, 2006
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR ANNEALING TRAPPED CHARGE IN A SEMICONDUCTOR DEVICE
- Publication number 20060103007
- Publication date May 18, 2006
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH TYPE BURIED ON-CHIP PRECISION PROGRAMMABLE RESISTOR
- Publication number 20050263850
- Publication date Dec 1, 2005
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate stack process for high reliability dual oxide CMOS devices and...
- Publication number 20020027681
- Publication date Mar 7, 2002
- International Business Machines Corportion
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS

John M. Aitken

Person

Patents Grantslast 30 patents

Neutralization of trapped charge in a charge accumulation layer of...

Method for semiconductor device having radiation hardened insulator...

Method for fabricating semiconductor device having radiation harden...

Phase-change TaN resistor based triple-state/multi-state read only...

Capacitor below the buried oxide of SOI CMOS technologies for prote...

Method for neutralizing trapped charge in a charge accumulation lay...

Phase-change TaN resistor based triple-state/multi-state read only...

Trench type buried on-chip precision programmable resistor

Capacitor below the buried oxide of SOI CMOS technologies for prote...

Phase-change TaN resistor based triple-state/multi-state read only...

Capacitor below the buried oxide of SOI CMOS technologies for prote...

Trench type buried on-chip precision programmable resistor

Heater for annealing trapped charge in a semiconductor device

Process of forming a capacitor on a substrate

Processes for reduced topography capacitors

Silicon-on-insulator non-volatile random access memory device

Structures and processes for reduced topography trench capacitors

Structures for reduced topography capacitors

Large scale IC personalization method employing air dielectric stru...

Larce scale IC personalization method employing air dielectric stru...

Method of Fabricating a micro-coaxial wiring structure

Modified silicon CMOS process having selectively deposited Si/SiGe...

Patents Applicationslast 30 patents

PHOTODETECTOR WITH WAVELENGTH DISCRIMINATION, AND METHOD FOR FORMIN...

NEUTRALIZATION OF TRAPPED CHARGE IN A CHARGE ACCUMULATION LAYER OF...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING RADIATION HARDEN...

DESIGN STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING RADIATION HARDENED...

PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY...

PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY...

CAPACITOR BELOW THE BURIED OXIDE OF SOI CMOS TECHNOLOGIES FOR PROTE...

CAPACITOR BELOW THE BURIED OXIDE OF SOI CMOS TECHNOLOGIES FOR PROTE...

CHARGE NEUTRALIZATION IN SEMICONDUCTOR STRUCTURES

PHASE-CHANGE TaN RESISTOR BASED TRIPLE-STATE/MULTI-STATE READ ONLY...

Trench type buried on-chip precision programmable resistor

CAPACITOR BELOW THE BURIED OXIDE OF SOI CMOS TECHNOLOGIES FOR PROTE...

HEATER FOR ANNEALING TRAPPED CHARGE IN A SEMICONDUCTOR DEVICE

TRENCH TYPE BURIED ON-CHIP PRECISION PROGRAMMABLE RESISTOR

Gate stack process for high reliability dual oxide CMOS devices and...