John M. Hergenrother

Person

Ridgefield, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-Z structure and method for co-alignment of mixed optical and e...
- Patent number 8,120,138
- Issue date Feb 21, 2012
- International Business Machines Corporation
- David Michael Fried
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,943,486
- Issue date May 17, 2011
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halo-first ultra-thin SOI FET for superior short channel control
- Patent number 7,859,061
- Issue date Dec 28, 2010
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for co-alignment of mixed optical and electron beam lithogra...
- Patent number 7,696,057
- Issue date Apr 13, 2010
- International Business Machines Corporation
- David Michael Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective incorporation of charge for transistor channels
- Patent number 7,687,863
- Issue date Mar 30, 2010
- International Business Machines Corporation
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halo-first ultra-thin SOI FET for superior short channel control
- Patent number 7,595,247
- Issue date Sep 29, 2009
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench structure and method for co-alignment of mixed optical and e...
- Patent number 7,550,361
- Issue date Jun 23, 2009
- International Business Machines Corporation
- David Michael Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,462,525
- Issue date Dec 9, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective incorporation of charge for transistor channels
- Patent number 7,374,998
- Issue date May 20, 2008
- International Business Machines Corporation
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,314,790
- Issue date Jan 1, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Patent number 7,161,169
- Issue date Jan 9, 2007
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THIN SILICON SINGLE DIFFUSION FIELD EFFECT TRANSISTOR FOR ENHANCED...
- Publication number 20090305471
- Publication date Dec 10, 2009
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALO-FIRST ULTRA-THIN SOI FET FOR SUPERIOR SHORT CHANNEL CONTROL
- Publication number 20090294854
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-Z STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND E...
- Publication number 20090212388
- Publication date Aug 27, 2009
- International Business Machines Corporation
- David Michael Fried
- B82 - NANO-TECHNOLOGY
Information Patent Application
HALO-FIRST ULTRA-THIN SOI FET FOR SUPERIOR SHORT CHANNEL CONTROL
- Publication number 20080290409
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INCORPORATION OF CHARGE FOR TRANSISTOR CHANNELS
- Publication number 20080217682
- Publication date Sep 11, 2008
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...
- Publication number 20080206958
- Publication date Aug 28, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND E...
- Publication number 20080157404
- Publication date Jul 3, 2008
- David Michael Fried
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH-Z STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND E...
- Publication number 20080157260
- Publication date Jul 3, 2008
- David Michael Fried
- B82 - NANO-TECHNOLOGY
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...
- Publication number 20080044987
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...
- Publication number 20080044966
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective incorporation of charge for transistor channels
- Publication number 20070184619
- Publication date Aug 9, 2007
- John Michael Hergenrother
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin silicon single diffusion field effect transistor for enhanced...
- Publication number 20070158743
- Publication date Jul 12, 2007
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 Si UNDER BIAXIAL...
- Publication number 20070099367
- Publication date May 3, 2007
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement of electron and hole mobilities in <110> Si under biaxi...
- Publication number 20050145837
- Publication date Jul 7, 2005
- International Business Machines Corporation
- Victor Chan
- H01 - BASIC ELECTRIC ELEMENTS

John M. Hergenrother

Person

Patents Grantslast 30 patents

High-Z structure and method for co-alignment of mixed optical and e...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Halo-first ultra-thin SOI FET for superior short channel control

Method for co-alignment of mixed optical and electron beam lithogra...

Selective incorporation of charge for transistor channels

Halo-first ultra-thin SOI FET for superior short channel control

Trench structure and method for co-alignment of mixed optical and e...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Selective incorporation of charge for transistor channels

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Enhancement of electron and hole mobilities in <110> Si under biaxi...

Patents Applicationslast 30 patents

THIN SILICON SINGLE DIFFUSION FIELD EFFECT TRANSISTOR FOR ENHANCED...

HALO-FIRST ULTRA-THIN SOI FET FOR SUPERIOR SHORT CHANNEL CONTROL

HIGH-Z STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND E...

HALO-FIRST ULTRA-THIN SOI FET FOR SUPERIOR SHORT CHANNEL CONTROL

SELECTIVE INCORPORATION OF CHARGE FOR TRANSISTOR CHANNELS

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...

TRENCH STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND E...

HIGH-Z STRUCTURE AND METHOD FOR CO-ALIGNMENT OF MIXED OPTICAL AND E...

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXI...

Selective incorporation of charge for transistor channels

Thin silicon single diffusion field effect transistor for enhanced...

ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN 110 Si UNDER BIAXIAL...

Enhancement of electron and hole mobilities in <110> Si under biaxi...