John M. Larson

Person

Northfield, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Anisotropic iron nitride permanent magnets
- Patent number 11,830,644
- Issue date Nov 28, 2023
- NIRON MAGNETICS, INC.
- Francis Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic iron nitride permanent magnets
- Patent number 11,309,107
- Issue date Apr 19, 2022
- NIRON MAGNETICS, INC.
- Francis Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier CMOS device and method
- Patent number 8,154,025
- Issue date Apr 10, 2012
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a CMOS device with zero soft error rate
- Patent number 8,084,342
- Issue date Dec 27, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic Schottky barrier MOSFET device and method of manufacture
- Patent number 8,058,167
- Issue date Nov 15, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal source and drain transistor having high dielectric constant g...
- Patent number 8,022,459
- Issue date Sep 20, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming schottky...
- Patent number 7,939,902
- Issue date May 10, 2011
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device with zero soft error rate
- Patent number 7,821,075
- Issue date Oct 26, 2010
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having high dielectric constant gate insulating layer an...
- Patent number 7,674,680
- Issue date Mar 9, 2010
- Avolare 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming Schottky...
- Patent number 7,294,898
- Issue date Nov 13, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky-barrier mosfet manufacturing method using isotropic etch p...
- Patent number 7,291,524
- Issue date Nov 6, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel Schottky-barrier MOSFET device and manufacturing method
- Patent number 7,221,019
- Issue date May 22, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier CMOS fabrication method
- Patent number 6,974,737
- Issue date Dec 13, 2005
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having high dielectric constant gate insulating layer an...
- Patent number 6,949,787
- Issue date Sep 27, 2005
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having source and/or drain forming Schottky...
- Patent number 6,784,035
- Issue date Aug 31, 2004
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conveyor belt with asymmetric edge links
- Patent number 5,501,319
- Issue date Mar 26, 1996
- Ashworth Bros., Inc.
- John Larson
- B65 - CONVEYING PACKING STORING HANDLING THIN OR FILAMENTARY MATERIAL

Patents Applicationslast 30 patents

Information Patent Application
ANISOTROPIC IRON NITRIDE PERMANENT MAGNETS
- Publication number 20240047102
- Publication date Feb 8, 2024
- NIRON MAGNETICS, INC.
- Francis JOHNSON
- C01 - INORGANIC CHEMISTRY
Information Patent Application
ANISOTROPIC IRON NITRIDE PERMANENT MAGNETS
- Publication number 20220238263
- Publication date Jul 28, 2022
- NIRON MAGNETICS, INC.
- Francis JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COERCIVITY-ENHANCED IRON NITRIDE NANOPARTICLES WITH HIGH SATURATION...
- Publication number 20220215991
- Publication date Jul 7, 2022
- NIRON MAGNETICS, INC.
- Francis JOHNSON
- B22 - CASTING POWDER METALLURGY
Information Patent Application
ANISOTROPIC IRON NITRIDE PERMANENT MAGNETS
- Publication number 20210265086
- Publication date Aug 26, 2021
- NIRON MAGNETICS, INC.
- Francis JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20120056250
- Publication date Mar 8, 2012
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A CMOS DEVICE WITH ZERO SOFT ERROR RATE
- Publication number 20110034016
- Publication date Feb 10, 2011
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SOURCE AND DRAIN TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT G...
- Publication number 20100213556
- Publication date Aug 26, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER INTEGRATED CIRCUIT
- Publication number 20100025774
- Publication date Feb 4, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
- Publication number 20100015802
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING SOURCE AND/OR DRAIN FORMING SCHOTTKY...
- Publication number 20100013014
- Publication date Jan 21, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER CMOS DEVICE AND METHOD
- Publication number 20100006949
- Publication date Jan 14, 2010
- AVOLARE 2, LLC
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having source and/or drain forming Schottky...
- Publication number 20080079107
- Publication date Apr 3, 2008
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device with zero soft error rate
- Publication number 20070080406
- Publication date Apr 12, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamic Schottky barrier MOSFET device and method of manufacture
- Publication number 20070026590
- Publication date Feb 1, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20070007605
- Publication date Jan 11, 2007
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short-channel schottky-barrier MOSFET device and manufacturing method
- Publication number 20060244052
- Publication date Nov 2, 2006
- Spinnaker Semiconductor, Inc.
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier MOSFET device and circuit
- Publication number 20060237752
- Publication date Oct 26, 2006
- John M. Larson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20060079059
- Publication date Apr 13, 2006
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier CMOS device and method
- Publication number 20050287730
- Publication date Dec 29, 2005
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamic schottky barrier MOSFET device and method of manufacture
- Publication number 20050139860
- Publication date Jun 30, 2005
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky-barrier MOSFET manufacturing method using isotropic etch p...
- Publication number 20050118793
- Publication date Jun 2, 2005
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier integrated circuit
- Publication number 20050104152
- Publication date May 19, 2005
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20050106821
- Publication date May 19, 2005
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having source and/or drain forming Schottky...
- Publication number 20050003595
- Publication date Jan 6, 2005
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20040171240
- Publication date Sep 2, 2004
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier CMOS device and method
- Publication number 20040041226
- Publication date Mar 4, 2004
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier CMOS device and method
- Publication number 20030235936
- Publication date Dec 25, 2003
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having source and/or drain forming schottky...
- Publication number 20030139001
- Publication date Jul 24, 2003
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having high dielectric constant gate insulating layer an...
- Publication number 20030034532
- Publication date Feb 20, 2003
- John P. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method for a device for regulating flow of electric cur...
- Publication number 20030032270
- Publication date Feb 13, 2003
- John Snyder
- H01 - BASIC ELECTRIC ELEMENTS

John M. Larson

Person

Patents Grantslast 30 patents

Anisotropic iron nitride permanent magnets

Anisotropic iron nitride permanent magnets

Schottky barrier CMOS device and method

Method of manufacturing a CMOS device with zero soft error rate

Dynamic Schottky barrier MOSFET device and method of manufacture

Metal source and drain transistor having high dielectric constant g...

Field effect transistor having source and/or drain forming schottky...

CMOS device with zero soft error rate

Transistor having high dielectric constant gate insulating layer an...

Field effect transistor having source and/or drain forming Schottky...

Schottky-barrier mosfet manufacturing method using isotropic etch p...

Short-channel Schottky-barrier MOSFET device and manufacturing method

Schottky barrier CMOS fabrication method

Transistor having high dielectric constant gate insulating layer an...

Field effect transistor having source and/or drain forming Schottky...

Conveyor belt with asymmetric edge links

Patents Applicationslast 30 patents

ANISOTROPIC IRON NITRIDE PERMANENT MAGNETS

ANISOTROPIC IRON NITRIDE PERMANENT MAGNETS

COERCIVITY-ENHANCED IRON NITRIDE NANOPARTICLES WITH HIGH SATURATION...

ANISOTROPIC IRON NITRIDE PERMANENT MAGNETS

DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

METHOD OF MANUFACTURING A CMOS DEVICE WITH ZERO SOFT ERROR RATE

METAL SOURCE AND DRAIN TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT G...

SCHOTTKY BARRIER INTEGRATED CIRCUIT

DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

FIELD EFFECT TRANSISTOR HAVING SOURCE AND/OR DRAIN FORMING SCHOTTKY...

SCHOTTKY BARRIER CMOS DEVICE AND METHOD

Field effect transistor having source and/or drain forming Schottky...

CMOS device with zero soft error rate

Dynamic Schottky barrier MOSFET device and method of manufacture

Transistor having high dielectric constant gate insulating layer an...

Short-channel schottky-barrier MOSFET device and manufacturing method

Schottky barrier MOSFET device and circuit

Transistor having high dielectric constant gate insulating layer an...

Schottky barrier CMOS device and method

Dynamic schottky barrier MOSFET device and method of manufacture

Schottky-barrier MOSFET manufacturing method using isotropic etch p...

Schottky barrier integrated circuit

Transistor having high dielectric constant gate insulating layer an...

Field effect transistor having source and/or drain forming Schottky...

Transistor having high dielectric constant gate insulating layer an...

Schottky barrier CMOS device and method

Schottky barrier CMOS device and method

Field effect transistor having source and/or drain forming schottky...

Transistor having high dielectric constant gate insulating layer an...

Fabrication method for a device for regulating flow of electric cur...