John Manning Savidge Neilson

Person

Mountaintop, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated channel diode
- Patent number 11,444,191
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium high voltage MOSFET device
- Patent number 10,811,533
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 10,741,684
- Issue date Aug 11, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage MOS transistor
- Patent number 10,573,718
- Issue date Feb 25, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium voltage MOSFET device
- Patent number 10,553,717
- Issue date Feb 4, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast switching IGBT with embedded emitter shorting contacts and met...
- Patent number 9,941,383
- Issue date Apr 10, 2018
- Texas Instruments Incorporated
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having dual-gate cells with an integrated channel diode
- Patent number 9,881,995
- Issue date Jan 30, 2018
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated termination for multiple trench field plate
- Patent number 9,673,317
- Issue date Jun 6, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having dual-gate cells with an integrated channel diode
- Patent number 9,601,612
- Issue date Mar 21, 2017
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage MOS transistor and method of forming the same
- Patent number 9,525,035
- Issue date Dec 20, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 9,484,450
- Issue date Nov 1, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated termination for multiple trench field plate
- Patent number 9,450,082
- Issue date Sep 20, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast switching IGBT with embedded emitter shorting contacts and met...
- Patent number 9,385,196
- Issue date Jul 5, 2016
- Texas Instruments Incorporated
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium voltage MOSFET device
- Patent number 9,356,133
- Issue date May 31, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having dual-gate cells with an integrated channel diode
- Patent number 9,324,856
- Issue date Apr 26, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with curved trench feature coupling termination trench to ac...
- Patent number 9,245,994
- Issue date Jan 26, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of polysilicon residue in a trench for polysilicon trench...
- Patent number 9,230,851
- Issue date Jan 5, 2016
- Texas Instruments Incorporated
- Simon John Molloy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction MOSFET with integrated channel diode
- Patent number 9,136,381
- Issue date Sep 15, 2015
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual RESURF trench field plate in vertical MOSFET
- Patent number 8,748,976
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double sided IGBT phase leg architecture and clocking method for re...
- Patent number 6,856,520
- Issue date Feb 15, 2005
- The United States of America as represented by the Secretary of the Navy
- John M. Neilson
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Devices formable by low temperature direct bonding
- Patent number 6,274,892
- Issue date Aug 14, 2001
- Intersil Americas Inc.
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doubly graded junction termination extension for edge passivation o...
- Patent number 6,215,168
- Issue date Apr 10, 2001
- Intersil Corporation
- Linda Susan Brush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making semiconductor devices by low temperature direct...
- Patent number 6,194,290
- Issue date Feb 27, 2001
- Intersil Corporation
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced methods for making semiconductor devices by low temperatur...
- Patent number 6,153,495
- Issue date Nov 28, 2000
- Intersil Corporation
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage mosfet structure
- Patent number 6,081,009
- Issue date Jun 27, 2000
- Intersil Corporation
- John M. S. Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a MOS-gated semiconductor device with a single dif...
- Patent number 6,080,614
- Issue date Jun 27, 2000
- John Manning Sauidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor structure
- Patent number 6,066,878
- Issue date May 23, 2000
- Intersil Corporation
- John M. S. Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lifetime control for semiconductor devices
- Patent number 6,054,369
- Issue date Apr 25, 2000
- Intersil Corporation
- John Manning Savidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating UMOS semiconductor devices using a self-align...
- Patent number 5,940,689
- Issue date Aug 17, 1999
- Harris Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS-gated semiconductor devices
- Patent number 5,877,044
- Issue date Mar 2, 1999
- Harris Corporation
- John Manning Savidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20200373424
- Publication date Nov 26, 2020
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE
- Publication number 20170148871
- Publication date May 25, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH-VOLTAGE MOS TRANSISTOR
- Publication number 20170062573
- Publication date Mar 2, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20170025525
- Publication date Jan 26, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE
- Publication number 20160359039
- Publication date Dec 8, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND MET...
- Publication number 20160276459
- Publication date Sep 22, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Medium High Voltage MOSFET Device
- Publication number 20160240653
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Medium High Voltage MOSFET Device
- Publication number 20160240667
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Having Dual-Gate Cells with an Integrated Channel Diode
- Publication number 20160204249
- Publication date Jul 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH-VOLTAGE MOS TRANSISTOR AND METHOD OF FORMING THE MOS...
- Publication number 20160163804
- Publication date Jun 9, 2016
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE
- Publication number 20150357461
- Publication date Dec 10, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20150357459
- Publication date Dec 10, 2015
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH CURVED TRENCH FEATURE COUPLING TERMINATION TRENCH TO AC...
- Publication number 20140217497
- Publication date Aug 7, 2014
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF POLYSILICON RESIDUE IN A TRENCH FOR POLYSILICON TRENCH...
- Publication number 20140220761
- Publication date Aug 7, 2014
- TEXAS INSTRUMENTS INCORPORATED
- SIMON JOHN MOLLOY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND MET...
- Publication number 20140070265
- Publication date Mar 13, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEDIUM VOLTAGE MOSFET DEVICE
- Publication number 20130193502
- Publication date Aug 1, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double sided IGBT phase leg architecture and clocking method for re...
- Publication number 20040070027
- Publication date Apr 15, 2004
- John M. Neilson
- H03 - BASIC ELECTRONIC CIRCUITRY

John Manning Savidge Neilson

Person

Patents Grantslast 30 patents

Integrated channel diode

Medium high voltage MOSFET device

Integrated channel diode

Vertical high-voltage MOS transistor

Medium voltage MOSFET device

Fast switching IGBT with embedded emitter shorting contacts and met...

MOSFET having dual-gate cells with an integrated channel diode

Integrated termination for multiple trench field plate

MOSFET having dual-gate cells with an integrated channel diode

Vertical high-voltage MOS transistor and method of forming the same

Integrated channel diode

Integrated termination for multiple trench field plate

Fast switching IGBT with embedded emitter shorting contacts and met...

Medium voltage MOSFET device

MOSFET having dual-gate cells with an integrated channel diode

MOSFET with curved trench feature coupling termination trench to ac...

Reduction of polysilicon residue in a trench for polysilicon trench...

Super junction MOSFET with integrated channel diode

Dual RESURF trench field plate in vertical MOSFET

Double sided IGBT phase leg architecture and clocking method for re...

Devices formable by low temperature direct bonding

Doubly graded junction termination extension for edge passivation o...

Methods for making semiconductor devices by low temperature direct...

Advanced methods for making semiconductor devices by low temperatur...

High voltage mosfet structure

Method of making a MOS-gated semiconductor device with a single dif...

High voltage semiconductor structure

Lifetime control for semiconductor devices

Method of fabricating UMOS semiconductor devices using a self-align...

Method of making MOS-gated semiconductor devices

Patents Applicationslast 30 patents

INTEGRATED CHANNEL DIODE

MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE

VERTICAL HIGH-VOLTAGE MOS TRANSISTOR

INTEGRATED CHANNEL DIODE

INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE

FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND MET...

Medium High Voltage MOSFET Device

Medium High Voltage MOSFET Device

MOSFET Having Dual-Gate Cells with an Integrated Channel Diode

VERTICAL HIGH-VOLTAGE MOS TRANSISTOR AND METHOD OF FORMING THE MOS...

INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE

INTEGRATED CHANNEL DIODE

MOSFET WITH CURVED TRENCH FEATURE COUPLING TERMINATION TRENCH TO AC...

REDUCTION OF POLYSILICON RESIDUE IN A TRENCH FOR POLYSILICON TRENCH...

FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND MET...

MEDIUM VOLTAGE MOSFET DEVICE

Double sided IGBT phase leg architecture and clocking method for re...