John Michael Parsey, JR.

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low clamp voltage ESD method
- Patent number 8,309,422
- Issue date Nov 13, 2012
- Semiconductor Components Industries, LLC
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench structure having a sealing plug
- Patent number 8,106,436
- Issue date Jan 31, 2012
- Semiconductor Components Industries, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low capacitance ESD device and structure therefor
- Patent number 8,039,359
- Issue date Oct 18, 2011
- Semiconductor Components Industries, LLC
- Thomas Keena
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor trench structure having a sealing plug and method
- Patent number 7,902,075
- Issue date Mar 8, 2011
- Semiconductor Components Industries, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench charge compensation regions...
- Patent number 7,902,601
- Issue date Mar 8, 2011
- Semiconductor Components Industries, LLC
- Gary H. Loechelt
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low clamp voltage ESD device and method therefor
- Patent number 7,842,969
- Issue date Nov 30, 2010
- Semiconductor Components Industries, LLC
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having trench charge compe...
- Patent number 7,799,640
- Issue date Sep 21, 2010
- Semiconductor Components Industries, LLC
- John M. Parsey, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel ESD device and method therefor
- Patent number 7,579,632
- Issue date Aug 25, 2009
- Semiconductor Components Industries, LLC
- Ali Salih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low capacitance ESD device and structure therefor
- Patent number 7,538,395
- Issue date May 26, 2009
- Semiconductor Components Industries, LLC
- Thomas Keena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench charge compensation regions...
- Patent number 7,482,220
- Issue date Jan 27, 2009
- Semiconductor Components Industries, LLC
- Gary H. Loechelt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DIE SINGULATION METHOD
- Publication number 20120244681
- Publication date Sep 27, 2012
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A FEATURE IN A TRENCH
- Publication number 20120049320
- Publication date Mar 1, 2012
- John Michael Parsey, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE SINGULATION METHOD
- Publication number 20110244657
- Publication date Oct 6, 2011
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG
- Publication number 20110233635
- Publication date Sep 29, 2011
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CLAMP VOLTAGE ESD METHOD
- Publication number 20110021009
- Publication date Jan 27, 2011
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD
- Publication number 20100059815
- Publication date Mar 11, 2010
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR
- Publication number 20100006889
- Publication date Jan 14, 2010
- David D. Marreiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
- Publication number 20090162988
- Publication date Jun 25, 2009
- Thomas Keena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DEEP TRENCH CHARGE COMPENSATION REGIONS...
- Publication number 20090096021
- Publication date Apr 16, 2009
- Gary H. Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
- Publication number 20090079022
- Publication date Mar 26, 2009
- Thomas Keena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
- Publication number 20090079001
- Publication date Mar 26, 2009
- Ali Salih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING TRENCH CHARGE COMPE...
- Publication number 20080081440
- Publication date Apr 3, 2008
- John M. Parsey, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

John Michael Parsey, JR.

Person

Patents Grantslast 30 patents

Low clamp voltage ESD method

Semiconductor trench structure having a sealing plug

Method of forming low capacitance ESD device and structure therefor

Semiconductor trench structure having a sealing plug and method

Semiconductor device having deep trench charge compensation regions...

Low clamp voltage ESD device and method therefor

Method of forming a semiconductor device having trench charge compe...

Multi-channel ESD device and method therefor

Method of forming low capacitance ESD device and structure therefor

Semiconductor device having deep trench charge compensation regions...

Patents Applicationslast 30 patents

SEMICONDUCTOR DIE SINGULATION METHOD

ELECTRONIC DEVICE INCLUDING A FEATURE IN A TRENCH

SEMICONDUCTOR DIE SINGULATION METHOD

SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG

LOW CLAMP VOLTAGE ESD METHOD

SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD

LOW CLAMP VOLTAGE ESD DEVICE AND METHOD THEREFOR

METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR

SEMICONDUCTOR DEVICE HAVING DEEP TRENCH CHARGE COMPENSATION REGIONS...

METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR

MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR

METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING TRENCH CHARGE COMPE...