John R. Sporre

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,937
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,936
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 11,652,161
- Issue date May 16, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field effect transistor with dual liner bottom s...
- Patent number 11,646,235
- Issue date May 9, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolated VTFET devices
- Patent number 11,615,992
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer for metal gates
- Patent number 11,557,589
- Issue date Jan 17, 2023
- Tessera, LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sublithography gate cut physical unclonable function
- Patent number 11,462,631
- Issue date Oct 4, 2022
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin cut to prevent replacement gate collapse on STI
- Patent number 11,315,922
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,239,316
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor devices with self-aligned gates
- Patent number 11,183,389
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field effect transistor with dual liner bottom s...
- Patent number 11,152,266
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,127,815
- Issue date Sep 21, 2021
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 11,043,581
- Issue date Jun 22, 2021
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate cut after dummy gate removal
- Patent number 11,024,715
- Issue date Jun 1, 2021
- Tessera, Inc.
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 11,004,944
- Issue date May 11, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 10,985,250
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of trilayer resist without damage to underlying structure
- Patent number 10,957,536
- Issue date Mar 23, 2021
- ELPIS TECHNOLOGIES INC.
- Muthumanickam Sankarapandian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin removal for SOI like isolation with uniform active fin height
- Patent number 10,937,810
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super long channel device within VFET architecture
- Patent number 10,833,190
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Sub-lithographic magnetic tunnel junctions for magnetic random acce...
- Patent number 10,741,752
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate cut device fabrication with extended height gates
- Patent number 10,658,473
- Issue date May 19, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height control and ILD protection
- Patent number 10,629,699
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for enabling high aspect ratio sacrificial gates
- Patent number 10,629,698
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut to prevent replacement gate collapse on STI
- Patent number 10,622,352
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 10,615,269
- Issue date Apr 7, 2020
- Terresa, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer for metal gates
- Patent number 10,607,991
- Issue date Mar 31, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate cut after dummy gate removal
- Patent number 10,600,868
- Issue date Mar 24, 2020
- Tessera, Inc.
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite sacrificial gate with etch selective layer
- Patent number 10,593,555
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super long channel device within VFET architecture
- Patent number 10,573,745
- Issue date Feb 25, 2020
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20240088268
- Publication date Mar 14, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20230352480
- Publication date Nov 2, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20220140074
- Publication date May 5, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20210376078
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...
- Publication number 20210351082
- Publication date Nov 11, 2021
- International Business Machines Corporation
- ERIC MILLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBLITHOGRAPHY GATE CUT PHYSICAL UNCLONABLE FUNCTION
- Publication number 20210320190
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHYSICAL UNCLONABLE FUNCTION
- Publication number 20210320070
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUBSTRATE ISOLATED VTFET DEVICES
- Publication number 20210217669
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...
- Publication number 20210104440
- Publication date Apr 8, 2021
- International Business Machines Corporation
- ERIC MILLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED GATES
- Publication number 20200294803
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20200266284
- Publication date Aug 20, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET GATE CUT AFTER DUMMY GATE REMOVAL
- Publication number 20200243648
- Publication date Jul 30, 2020
- Tessera, Inc.
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20200235094
- Publication date Jul 23, 2020
- Tessera, Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Cut to Prevent Replacement Gate Collapse on STI
- Publication number 20200219874
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20200194563
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-LITHOGRAPHIC MAGNETIC TUNNEL JUNCTIONS FOR MAGNETIC RANDOM ACCE...
- Publication number 20200144495
- Publication date May 7, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES
- Publication number 20200083334
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE
- Publication number 20200066519
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Muthumanickam Sankarapandian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sub-Fin Removal for SOI Like Isolation with Uniform Active Fin Height
- Publication number 20190371822
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
- Publication number 20190341490
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...
- Publication number 20190305105
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SACRIFICIAL GATE WITH ETCH SELECTIVE LAYER
- Publication number 20190295852
- Publication date Sep 26, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20190259833
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20190259832
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT IN REPLACEMENT METAL GATE PROCESS
- Publication number 20190252268
- Publication date Aug 15, 2019
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET GATE CUT AFTER DUMMY GATE REMOVAL
- Publication number 20190189517
- Publication date Jun 20, 2019
- International Business Machines Corporation
- John R. Sporre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20180374930
- Publication date Dec 27, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
- Publication number 20180342614
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE
- Publication number 20180342615
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE
- Publication number 20180337261
- Publication date Nov 22, 2018
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

John R. Sporre

Person

Patents Grantslast 30 patents

Nanosheet channel-to-source and drain isolation

Semiconductor device and method of forming the semiconductor device

Semiconductor device and method of forming the semiconductor device

Nanosheet channel-to-source and drain isolation

Vertical tunneling field effect transistor with dual liner bottom s...

Substrate isolated VTFET devices

Air gap spacer for metal gates

Sublithography gate cut physical unclonable function

Fin cut to prevent replacement gate collapse on STI

Semiconductor device and method of forming the semiconductor device

Fin field effect transistor devices with self-aligned gates

Vertical tunneling field effect transistor with dual liner bottom s...

Semiconductor device and method of forming the semiconductor device

Nanosheet channel-to-source and drain isolation

FinFET gate cut after dummy gate removal

Gate cut device fabrication with extended height gates

Gate cut device fabrication with extended height gates

Removal of trilayer resist without damage to underlying structure

Sub-fin removal for SOI like isolation with uniform active fin height

Super long channel device within VFET architecture

Sub-lithographic magnetic tunnel junctions for magnetic random acce...

Gate cut device fabrication with extended height gates

Gate height control and ILD protection

Method and structure for enabling high aspect ratio sacrificial gates

Fin cut to prevent replacement gate collapse on STI

Nanosheet channel-to-source and drain isolation

Air gap spacer for metal gates

FinFET gate cut after dummy gate removal

Composite sacrificial gate with etch selective layer

Super long channel device within VFET architecture

Patents Applicationslast 30 patents

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

AIR GAP SPACER FOR METAL GATES

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...

SUBLITHOGRAPHY GATE CUT PHYSICAL UNCLONABLE FUNCTION

PHYSICAL UNCLONABLE FUNCTION

SUBSTRATE ISOLATED VTFET DEVICES

VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH DUAL LINER BOTTOM S...

FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED GATES

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

FINFET GATE CUT AFTER DUMMY GATE REMOVAL

AIR GAP SPACER FOR METAL GATES

Fin Cut to Prevent Replacement Gate Collapse on STI

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

SUB-LITHOGRAPHIC MAGNETIC TUNNEL JUNCTIONS FOR MAGNETIC RANDOM ACCE...

GATE CUT DEVICE FABRICATION WITH EXTENDED HEIGHT GATES

REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE

Sub-Fin Removal for SOI Like Isolation with Uniform Active Fin Height

SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE

GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...

COMPOSITE SACRIFICIAL GATE WITH ETCH SELECTIVE LAYER

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

GATE CUT IN REPLACEMENT METAL GATE PROCESS

FINFET GATE CUT AFTER DUMMY GATE REMOVAL

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE

SUPER LONG CHANNEL DEVICE WITHIN VFET ARCHITECTURE

FORMING STACKED NANOWIRE SEMICONDUCTOR DEVICE