John Russell McMacken

Person

Summerfield, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and fabrication method for capacitors integratible with v...
- Patent number 7,911,006
- Issue date Mar 22, 2011
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical transistor and capacitor
- Patent number 7,700,432
- Issue date Apr 20, 2010
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication method for capacitors integratible with v...
- Patent number 7,633,118
- Issue date Dec 15, 2009
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method
- Patent number 7,491,610
- Issue date Feb 17, 2009
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 7,259,048
- Issue date Aug 21, 2007
- Agere Systems, INC
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication method for capacitors integratible with v...
- Patent number 7,242,056
- Issue date Jul 10, 2007
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 7,078,280
- Issue date Jul 18, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Patent number 7,056,783
- Issue date Jun 6, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density inter-die interconnect structure
- Patent number 7,045,835
- Issue date May 16, 2006
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate junction field-effect transistor
- Patent number 7,033,877
- Issue date Apr 25, 2006
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor compatible with vertical replacement ga...
- Patent number 6,759,730
- Issue date Jul 6, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate silicon-on-insulator transistor
- Patent number 6,709,904
- Issue date Mar 23, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical replacement-gate junction field-effect transistor
- Patent number 6,690,040
- Issue date Feb 10, 2004
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Patent number 6,686,604
- Issue date Feb 3, 2004
- Agere Systems Inc.
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND FABRICATION METHOD FOR CAPACITORS INTEGRATIBLE WITH V...
- Publication number 20100044767
- Publication date Feb 25, 2010
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method
- Publication number 20090130810
- Publication date May 21, 2009
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method
- Publication number 20070238243
- Publication date Oct 11, 2007
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20070228440
- Publication date Oct 4, 2007
- Agere Systems Inc.
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Vertical Replacement-Gate Silicon-On-Insulator Transistor
- Publication number 20070111414
- Publication date May 17, 2007
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20060166429
- Publication date Jul 27, 2006
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-density inter-die interconnect structure
- Publication number 20060166395
- Publication date Jul 27, 2006
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Publication number 20050048709
- Publication date Mar 3, 2005
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20040188737
- Publication date Sep 30, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate silicon-on-insulator transistor
- Publication number 20040155264
- Publication date Aug 12, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20040110345
- Publication date Jun 10, 2004
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-density inter-die interconnect structure
- Publication number 20040026771
- Publication date Feb 12, 2004
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate silicon-on-insulator transistor
- Publication number 20030064567
- Publication date Apr 3, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple operating voltage vertical replacement-gate (VRG) transistor
- Publication number 20030060015
- Publication date Mar 27, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication method for capacitors integratible with v...
- Publication number 20030052365
- Publication date Mar 20, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar junction transistor compatible with vertical replacement ga...
- Publication number 20030052721
- Publication date Mar 20, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical replacement-gate junction field-effect transistor
- Publication number 20030047749
- Publication date Mar 13, 2003
- Samir Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-density inter-die interconnect structure
- Publication number 20030049925
- Publication date Mar 13, 2003
- Paul Arthur Layman
- H01 - BASIC ELECTRIC ELEMENTS

John Russell McMacken

Person

Patents Grantslast 30 patents

Structure and fabrication method for capacitors integratible with v...

Method of fabricating a vertical transistor and capacitor

Structure and fabrication method for capacitors integratible with v...

Fabrication method

Vertical replacement-gate silicon-on-insulator transistor

Structure and fabrication method for capacitors integratible with v...

Vertical replacement-gate silicon-on-insulator transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

High-density inter-die interconnect structure

Vertical replacement-gate junction field-effect transistor

Bipolar junction transistor compatible with vertical replacement ga...

Vertical replacement-gate silicon-on-insulator transistor

Vertical replacement-gate junction field-effect transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

Patents Applicationslast 30 patents

STRUCTURE AND FABRICATION METHOD FOR CAPACITORS INTEGRATIBLE WITH V...

Fabrication method

Fabrication method

Structure and fabrication method for capacitors integratible with v...

A Vertical Replacement-Gate Silicon-On-Insulator Transistor

Vertical replacement-gate junction field-effect transistor

High-density inter-die interconnect structure

Multiple operating voltage vertical replacement-gate (VRG) transistor

Structure and fabrication method for capacitors integratible with v...

Vertical replacement-gate silicon-on-insulator transistor

Vertical replacement-gate junction field-effect transistor

High-density inter-die interconnect structure

Vertical replacement-gate silicon-on-insulator transistor

Multiple operating voltage vertical replacement-gate (VRG) transistor

Structure and fabrication method for capacitors integratible with v...

Bipolar junction transistor compatible with vertical replacement ga...

Vertical replacement-gate junction field-effect transistor

High-density inter-die interconnect structure