John Smythe

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial single crystalline silicon growth for a horizontal access...
- Patent number 12,279,410
- Issue date Apr 15, 2025
- Micron Technology, Inc.
- Armin Saeedi Vahdat
- G11 - INFORMATION STORAGE
Information Patent Grant
Channel conduction in semiconductor devices
- Patent number 12,166,072
- Issue date Dec 10, 2024
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming material within openings extending into a semico...
- Patent number 12,020,979
- Issue date Jun 25, 2024
- Micron Technology, Inc.
- Gurtej S. Sandhu
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Transistors comprising two-dimensional materials and related memory...
- Patent number 12,015,089
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Witold Kula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for inhibiting line bending during conductive material depo...
- Patent number 11,935,782
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming high aspect ratio features
- Patent number 11,854,869
- Issue date Dec 26, 2023
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel conduction in semiconductor devices
- Patent number 11,769,795
- Issue date Sep 26, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices including conductive rails, and related met...
- Patent number 11,715,692
- Issue date Aug 1, 2023
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicon nitride including plasma exposure
- Patent number 11,651,955
- Issue date May 16, 2023
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions comprising dielectric material, and met...
- Patent number 11,515,198
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel integration in a three-node access device for vertical thre...
- Patent number 11,476,251
- Issue date Oct 18, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming high aspect ratio openings and methods of formin...
- Patent number 11,417,565
- Issue date Aug 16, 2022
- Micron Technology, Inc.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuity, dram circuitry, methods used in forming integr...
- Patent number 11,411,008
- Issue date Aug 9, 2022
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric repair on three-node access device formation for ve...
- Patent number 11,329,051
- Issue date May 10, 2022
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxtal single crystalline silicon growth for a horizontal access...
- Patent number 11,289,491
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with species on or in conductive material on elongate lines
- Patent number 11,270,909
- Issue date Mar 8, 2022
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate dielectric in three-node access device formation f...
- Patent number 11,239,117
- Issue date Feb 1, 2022
- Micron Technology, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage node after three-node access device formation for vertical...
- Patent number 11,227,864
- Issue date Jan 18, 2022
- Micron Technology, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel conduction in semiconductor devices
- Patent number 11,171,206
- Issue date Nov 9, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with multidielectric spacers on conductive regions of sta...
- Patent number 11,127,830
- Issue date Sep 21, 2021
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising two-dimensional materials and related semico...
- Patent number 11,121,258
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Witold Kula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of crystal growth resulting from annealing a conductive m...
- Patent number 11,081,364
- Issue date Aug 3, 2021
- Micron Technology, Inc.
- Marko Milojevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions having fluorocarbon material
- Patent number 10,998,221
- Issue date May 4, 2021
- Micron Technology, Inc.
- Gurtej S. Sandhu
- B32 - LAYERED PRODUCTS
Information Patent Grant
Methods of forming semiconductor devices comprising silicon nitride...
- Patent number 10,964,532
- Issue date Mar 30, 2021
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of an atomic layer of germanium in an opening of a substr...
- Patent number 10,964,536
- Issue date Mar 30, 2021
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping a silicon-containing material and methods of form...
- Patent number 10,937,654
- Issue date Mar 2, 2021
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming high aspect ratio openings and methods of formin...
- Patent number 10,903,109
- Issue date Jan 26, 2021
- Micron Technology, Inc.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuity, DRAM circuitry, methods used in forming integr...
- Patent number 10,777,562
- Issue date Sep 15, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method used in forming integrated circuitry
- Patent number 10,770,465
- Issue date Sep 8, 2020
- Micron Technology, Inc.
- Byeung Chul Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions comprising dielectric material, and met...
- Patent number 10,763,155
- Issue date Sep 1, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND ELECTRONIC DEVICES INCLUDING TRANSISTORS COMPRISING T...
- Publication number 20240339543
- Publication date Oct 10, 2024
- Micron Technology, Inc.
- Witold Kula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Material Within Openings Extending into a Semico...
- Publication number 20240297068
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING HIGH ASPECT RATIO FEATURES
- Publication number 20240120237
- Publication date Apr 11, 2024
- Lodestar Licensing Group LLC
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL CONDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20240006478
- Publication date Jan 4, 2024
- Lodestar Licensing Group LLC
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS,...
- Publication number 20230391805
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Gurtej S. Sandhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MEMORY DEVICES INCLUDING CONDUCTIVE RAILS, AND RELATED METHODS AND...
- Publication number 20230335493
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH ASPECT RATIO FEATURES
- Publication number 20220344200
- Publication date Oct 27, 2022
- Micron Technology, Inc.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR INHIBITING LINE BENDING DURING CONDUCTIVE MATERIAL DEPO...
- Publication number 20220238340
- Publication date Jul 28, 2022
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SINGLE CRYSTALLINE SILICON GROWTH FOR A HORIZONTAL ACCESS...
- Publication number 20220223602
- Publication date Jul 14, 2022
- Micron Technology, Inc.
- Armin Saeedi Vahdat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING CONDUCTIVE RAILS, AND RELATED MEM...
- Publication number 20220051980
- Publication date Feb 17, 2022
- Micro Technology, Inc.
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN INTEGRATION IN A THREE-NODE ACCESS DEVICE FOR VERTICAL...
- Publication number 20220045069
- Publication date Feb 10, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL CONDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20220045165
- Publication date Feb 10, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-NODE ACCESS DEVICE FOR VERTICAL THREE DIMENSIONAL (3D) MEMORY
- Publication number 20220045061
- Publication date Feb 10, 2022
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL INTEGRATION IN A THREE-NODE ACCESS DEVICE FOR VERTICAL THRE...
- Publication number 20220045060
- Publication date Feb 10, 2022
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...
- Publication number 20220005930
- Publication date Jan 6, 2022
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS AND RELATED MEMORY...
- Publication number 20210408297
- Publication date Dec 30, 2021
- Micron Technology, Inc.
- Witold Kula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL DEPOSITION SYSTEMS, AND RELATED METHODS AND MICROELECTRONI...
- Publication number 20210381107
- Publication date Dec 9, 2021
- Micron Technology, Inc.
- John A. Smythe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR INHIBITING LINE BENDING DURING CONDUCTIVE MATERIAL DEPO...
- Publication number 20210233810
- Publication date Jul 29, 2021
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Material Within Openings Extending into a Semico...
- Publication number 20210225690
- Publication date Jul 22, 2021
- Micron Technology, Inc.
- Gurtej S. Sandhu
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
METHODS OF FORMING SILICON NITRIDE
- Publication number 20210217611
- Publication date Jul 15, 2021
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH ASPECT RATIO OPENINGS AND METHODS OF FORMIN...
- Publication number 20210143055
- Publication date May 13, 2021
- Micron Technology, Inc.
- Ken Tokashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL CONDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20210013305
- Publication date Jan 14, 2021
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuity, DRAM Circuitry, Methods Used In Forming Integr...
- Publication number 20200373307
- Publication date Nov 26, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Constructions Comprising Dielectric Material, and Met...
- Publication number 20200357682
- Publication date Nov 12, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Integrated Circuity, DRAM Circuitry, Methods Used In Forming Integr...
- Publication number 20200295011
- Publication date Sep 17, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF CRYSTAL GROWTH RESULTING FROM ANNEALING A CONDUCTIVE M...
- Publication number 20200251349
- Publication date Aug 6, 2020
- Micron Technology, Inc.
- Marko Milojevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF AN ATOMIC LAYER OF GERMANIUM ON A SUBSTRATE MATERIAL
- Publication number 20200251334
- Publication date Aug 6, 2020
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF DOPING A SILICON-CONTAINING MATERIAL, METHODS OF FORMING...
- Publication number 20200243339
- Publication date Jul 30, 2020
- Micron Technology, Inc.
- Francois H. Fabreguette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...
- Publication number 20200235005
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- John A. Smythe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS AND RELATED SEMICO...
- Publication number 20200066917
- Publication date Feb 27, 2020
- Micron Technology, Inc.
- Witold Kula
- H01 - BASIC ELECTRIC ELEMENTS

John Smythe

Person

Patents Grantslast 30 patents

Epitaxial single crystalline silicon growth for a horizontal access...

Channel conduction in semiconductor devices

Methods of forming material within openings extending into a semico...

Transistors comprising two-dimensional materials and related memory...

Methods for inhibiting line bending during conductive material depo...

Methods of forming high aspect ratio features

Channel conduction in semiconductor devices

Microelectronic devices including conductive rails, and related met...

Methods of forming silicon nitride including plasma exposure

Semiconductor constructions comprising dielectric material, and met...

Channel integration in a three-node access device for vertical thre...

Methods of forming high aspect ratio openings and methods of formin...

Integrated circuity, dram circuitry, methods used in forming integr...

Gate dielectric repair on three-node access device formation for ve...

Epitaxtal single crystalline silicon growth for a horizontal access...

Apparatus with species on or in conductive material on elongate lines

Replacement gate dielectric in three-node access device formation f...

Storage node after three-node access device formation for vertical...

Channel conduction in semiconductor devices

Apparatus with multidielectric spacers on conductive regions of sta...

Transistors comprising two-dimensional materials and related semico...

Reduction of crystal growth resulting from annealing a conductive m...

Semiconductor constructions having fluorocarbon material

Methods of forming semiconductor devices comprising silicon nitride...

Formation of an atomic layer of germanium in an opening of a substr...

Methods of doping a silicon-containing material and methods of form...

Methods of forming high aspect ratio openings and methods of formin...

Integrated circuity, DRAM circuitry, methods used in forming integr...

Method used in forming integrated circuitry

Semiconductor constructions comprising dielectric material, and met...

Patents Applicationslast 30 patents

APPARATUS AND ELECTRONIC DEVICES INCLUDING TRANSISTORS COMPRISING T...

Methods of Forming Material Within Openings Extending into a Semico...

MICROELECTRONIC DEVICES INCLUDING HIGH ASPECT RATIO FEATURES

CHANNEL CONDUCTION IN SEMICONDUCTOR DEVICES

GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS,...

MEMORY DEVICES INCLUDING CONDUCTIVE RAILS, AND RELATED METHODS AND...

METHODS OF FORMING HIGH ASPECT RATIO FEATURES

METHODS FOR INHIBITING LINE BENDING DURING CONDUCTIVE MATERIAL DEPO...

EPITAXIAL SINGLE CRYSTALLINE SILICON GROWTH FOR A HORIZONTAL ACCESS...

MICROELECTRONIC DEVICES INCLUDING CONDUCTIVE RAILS, AND RELATED MEM...

SOURCE/DRAIN INTEGRATION IN A THREE-NODE ACCESS DEVICE FOR VERTICAL...

CHANNEL CONDUCTION IN SEMICONDUCTOR DEVICES

THREE-NODE ACCESS DEVICE FOR VERTICAL THREE DIMENSIONAL (3D) MEMORY

CHANNEL INTEGRATION IN A THREE-NODE ACCESS DEVICE FOR VERTICAL THRE...

APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...

TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS AND RELATED MEMORY...

MATERIAL DEPOSITION SYSTEMS, AND RELATED METHODS AND MICROELECTRONI...

METHODS FOR INHIBITING LINE BENDING DURING CONDUCTIVE MATERIAL DEPO...

Methods of Forming Material Within Openings Extending into a Semico...

METHODS OF FORMING SILICON NITRIDE

METHODS OF FORMING HIGH ASPECT RATIO OPENINGS AND METHODS OF FORMIN...

CHANNEL CONDUCTION IN SEMICONDUCTOR DEVICES

Integrated Circuity, DRAM Circuitry, Methods Used In Forming Integr...

Semiconductor Constructions Comprising Dielectric Material, and Met...

Integrated Circuity, DRAM Circuitry, Methods Used In Forming Integr...

REDUCTION OF CRYSTAL GROWTH RESULTING FROM ANNEALING A CONDUCTIVE M...

FORMATION OF AN ATOMIC LAYER OF GERMANIUM ON A SUBSTRATE MATERIAL

METHODS OF DOPING A SILICON-CONTAINING MATERIAL, METHODS OF FORMING...

APPARATUS WITH MULTIDIELECTRIC SPACERS ON CONDUCTIVE REGIONS OF STA...

TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS AND RELATED SEMICO...