John W. Mosier II

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Bend, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned power MOSFET device with recessed gate and source
- Patent number 5,801,417
- Issue date Sep 1, 1998
- Advanced Power Technology, Inc.
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density power device fabrication process using undercut oxide...
- Patent number 5,648,283
- Issue date Jul 15, 1997
- Advanced Power Technology, Inc.
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density power device fabrication process
- Patent number 5,283,201
- Issue date Feb 1, 1994
- Advanced Power Technology, Inc.
- Dah W. Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topographic pattern delineated power MOSFET with profile tailored r...
- Patent number 5,045,903
- Issue date Sep 3, 1991
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making topographic pattern delineated power MOSFET with p...
- Patent number 5,019,522
- Issue date May 28, 1991
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Iopographic pattern delineated power mosfet with profile tailored r...
- Patent number 4,895,810
- Issue date Jan 23, 1990
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned power MOSFET with enhanced base region
- Publication number 20020074585
- Publication date Jun 20, 2002
- ADVANCED POWER TECHNOLOGY, INC., Delaware corporation
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS