Johnathan E. Faltermeier

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement metal gate stack for diffusion prevention
- Patent number 10,332,971
- Issue date Jun 25, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure cut after formation of epitaxial active regions
- Patent number 10,008,415
- Issue date Jun 26, 2018
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate stack for diffusion prevention
- Patent number 9,905,665
- Issue date Feb 27, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K layer chamfering to prevent oxygen ingress in replacement me...
- Patent number 9,865,703
- Issue date Jan 9, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially dielectric isolated fin-shaped field effect transistor (F...
- Patent number 9,735,277
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure cut after formation of epitaxial active regions
- Patent number 9,633,906
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure cut after formation of epitaxial active regions
- Patent number 9,559,009
- Issue date Jan 31, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially dielectric isolated fin-shaped field effect transistor (F...
- Patent number 9,537,011
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitridation on HDP oxide before high-k deposition to prevent oxygen...
- Patent number 9,472,408
- Issue date Oct 18, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitridation on HDP oxide before high-k deposition to prevent oxygen...
- Patent number 9,412,596
- Issue date Aug 9, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Handler wafer removal by use of sacrificial inert layer
- Patent number 9,401,303
- Issue date Jul 26, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET spacer formation by oriented implantation
- Patent number 9,337,315
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving device performance using epitaxially grown sil...
- Patent number 9,331,174
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET spacer formation by oriented implantation
- Patent number 9,318,578
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate stack for diffusion prevention
- Patent number 9,312,136
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having buried conductive elements
- Patent number 9,263,454
- Issue date Feb 16, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having buried conductive elements
- Patent number 9,245,892
- Issue date Jan 26, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFETs containing improved strain benefit and self aligned trench...
- Patent number 9,240,447
- Issue date Jan 19, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal doping for FinFET devices
- Patent number 9,105,559
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly scalable trench capacitor
- Patent number 8,932,932
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure, layout and fabrication method for uniaxially stra...
- Patent number 8,933,515
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform finFET gate height
- Patent number 8,928,057
- Issue date Jan 6, 2015
- International Business Machines Corporation
- William Cote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K/metal gate CMOS finFET with improved pFET threshold voltage
- Patent number 8,901,664
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET trench circuit
- Patent number 8,835,250
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Jonathan E. Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET spacer formation by oriented implantation
- Patent number 8,716,797
- Issue date May 6, 2014
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a planar field effect transistor with embedded an...
- Patent number 8,525,186
- Issue date Sep 3, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced transistor devices and methods of making
- Patent number 8,513,718
- Issue date Aug 20, 2013
- International Business Machines Corporation
- Johnathan E. Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly scalable trench capacitor
- Patent number 8,492,817
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer as hard mask scheme for in-situ doping in CMOS finFETs
- Patent number 8,420,464
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned patterned etch stop layers for semiconductor devices
- Patent number 8,367,544
- Issue date Feb 5, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-K LAYER CHAMFERING TO PREVENT OXYGEN INGRESS IN REPLACEMENT ME...
- Publication number 20180145150
- Publication date May 24, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION
- Publication number 20180083117
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K LAYER CHAMFERING TO PREVENT OXYGEN INGRESS IN REPLACEMENT ME...
- Publication number 20170194459
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY DIELECTRIC ISOLATED FIN-SHAPED FIELD EFFECT TRANSISTOR (F...
- Publication number 20170170323
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS
- Publication number 20170140994
- Publication date May 18, 2017
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDATION ON HDP OXIDE BEFORE HIGH-K DEPOSITION TO PREVENT OXYGEN...
- Publication number 20160225628
- Publication date Aug 4, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDATION ON HDP OXIDE BEFORE HIGH-K DEPOSITION TO PREVENT OXYGEN...
- Publication number 20160225629
- Publication date Aug 4, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION
- Publication number 20160197157
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HANDLER WAFER REMOVAL BY USE OF SACRIFICIAL INERT LAYER
- Publication number 20160035616
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS
- Publication number 20160027700
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BURIED CONDUCTIVE ELEMENTS
- Publication number 20150364476
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION
- Publication number 20150255458
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING BURIED CONDUCTIVE ELEMENTS
- Publication number 20150236024
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS
- Publication number 20150214219
- Publication date Jul 30, 2015
- GLOBAL FOUNDRIES Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM FINFET GATE HEIGHT
- Publication number 20140151772
- Publication date Jun 5, 2014
- International Business Machines Corporation
- William Cote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPACER FORMATION BY ORIENTED IMPLANTATION
- Publication number 20140131801
- Publication date May 15, 2014
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET TRENCH CIRCUIT
- Publication number 20140070294
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Jonathan E. Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY SCALABLE TRENCH CAPACITOR
- Publication number 20130203234
- Publication date Aug 8, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPACER FORMATION BY ORIENTED IMPLANTATION
- Publication number 20130020642
- Publication date Jan 24, 2013
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Free Si:C Epitaxial Growth
- Publication number 20120305940
- Publication date Dec 6, 2012
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER AS HARD MASK SCHEME FOR IN-SITU DOPING IN CMOS FINFETS
- Publication number 20120280250
- Publication date Nov 8, 2012
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRA...
- Publication number 20120261762
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED TRANSISTOR DEVICES AND METHODS OF MAKING
- Publication number 20120168775
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Johnathan E. Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING DEVICE PERFORMANCE USING EPITAXIALLY GROWN SIL...
- Publication number 20110254015
- Publication date Oct 20, 2011
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K/METAL GATE CMOS FINFET WITH IMPROVED PFET THRESHOLD VOLTAGE
- Publication number 20110227165
- Publication date Sep 22, 2011
- International Business Machines Corporation
- VEERARAGHAVAN S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A PLANAR FIELD EFFECT TRANSISTOR WITH EMBEDDED AN...
- Publication number 20110204384
- Publication date Aug 25, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRA...
- Publication number 20110175164
- Publication date Jul 21, 2011
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K/METAL GATE CMOS FINFET WITH IMPROVED PFET THRESHOLD VOLTAGE
- Publication number 20110108920
- Publication date May 12, 2011
- International Business Machines Corporation
- VEERARAGHAVAN S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SPACER FORMATION BY ORIENTED IMPLANTATION
- Publication number 20110101455
- Publication date May 5, 2011
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNED ETCH STOP LAYERS FOR SEMICONDUCTOR DEVICES
- Publication number 20110092069
- Publication date Apr 21, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Johnathan E. Faltermeier

Person

Patents Grantslast 30 patents

Replacement metal gate stack for diffusion prevention

Gate structure cut after formation of epitaxial active regions

Replacement metal gate stack for diffusion prevention

High-K layer chamfering to prevent oxygen ingress in replacement me...

Partially dielectric isolated fin-shaped field effect transistor (F...

Gate structure cut after formation of epitaxial active regions

Gate structure cut after formation of epitaxial active regions

Partially dielectric isolated fin-shaped field effect transistor (F...

Nitridation on HDP oxide before high-k deposition to prevent oxygen...

Nitridation on HDP oxide before high-k deposition to prevent oxygen...

Handler wafer removal by use of sacrificial inert layer

FinFET spacer formation by oriented implantation

Method for improving device performance using epitaxially grown sil...

FinFET spacer formation by oriented implantation

Replacement metal gate stack for diffusion prevention

Semiconductor structure having buried conductive elements

Semiconductor structure having buried conductive elements

finFETs containing improved strain benefit and self aligned trench...

Conformal doping for FinFET devices

Highly scalable trench capacitor

Device structure, layout and fabrication method for uniaxially stra...

Uniform finFET gate height

High-K/metal gate CMOS finFET with improved pFET threshold voltage

FinFET trench circuit

FinFET spacer formation by oriented implantation

Method of forming a planar field effect transistor with embedded an...

Stress enhanced transistor devices and methods of making

Highly scalable trench capacitor

Spacer as hard mask scheme for in-situ doping in CMOS finFETs

Self-aligned patterned etch stop layers for semiconductor devices

Patents Applicationslast 30 patents

HIGH-K LAYER CHAMFERING TO PREVENT OXYGEN INGRESS IN REPLACEMENT ME...

REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION

HIGH-K LAYER CHAMFERING TO PREVENT OXYGEN INGRESS IN REPLACEMENT ME...

PARTIALLY DIELECTRIC ISOLATED FIN-SHAPED FIELD EFFECT TRANSISTOR (F...

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

NITRIDATION ON HDP OXIDE BEFORE HIGH-K DEPOSITION TO PREVENT OXYGEN...

NITRIDATION ON HDP OXIDE BEFORE HIGH-K DEPOSITION TO PREVENT OXYGEN...

REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION

HANDLER WAFER REMOVAL BY USE OF SACRIFICIAL INERT LAYER

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

SEMICONDUCTOR STRUCTURE HAVING BURIED CONDUCTIVE ELEMENTS

REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION

SEMICONDUCTOR STRUCTURE HAVING BURIED CONDUCTIVE ELEMENTS

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

UNIFORM FINFET GATE HEIGHT

FINFET SPACER FORMATION BY ORIENTED IMPLANTATION

FINFET TRENCH CIRCUIT

HIGHLY SCALABLE TRENCH CAPACITOR

FINFET SPACER FORMATION BY ORIENTED IMPLANTATION

Defect Free Si:C Epitaxial Growth

SPACER AS HARD MASK SCHEME FOR IN-SITU DOPING IN CMOS FINFETS

DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRA...

STRESS ENHANCED TRANSISTOR DEVICES AND METHODS OF MAKING

METHOD FOR IMPROVING DEVICE PERFORMANCE USING EPITAXIALLY GROWN SIL...

HIGH-K/METAL GATE CMOS FINFET WITH IMPROVED PFET THRESHOLD VOLTAGE

METHOD OF FORMING A PLANAR FIELD EFFECT TRANSISTOR WITH EMBEDDED AN...

DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRA...

HIGH-K/METAL GATE CMOS FINFET WITH IMPROVED PFET THRESHOLD VOLTAGE

FINFET SPACER FORMATION BY ORIENTED IMPLANTATION

SELF-ALIGNED PATTERNED ETCH STOP LAYERS FOR SEMICONDUCTOR DEVICES