Jon S. Choy

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive random access memory (MRAM) with end of life margi...
- Patent number 12,094,510
- Issue date Sep 17, 2024
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Testing disruptive memories
- Patent number 12,051,476
- Issue date Jul 30, 2024
- NXP USA, INC.
- Timothy Strauss
- G11 - INFORMATION STORAGE
Information Patent Grant
Column repair in a memory system using a repair cache
- Patent number 11,989,417
- Issue date May 21, 2024
- NXP USA, INC.
- Jon Scott Choy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory read circuitry with a flipped voltage follower
- Patent number 11,742,012
- Issue date Aug 29, 2023
- NXP USA, INC.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with one-time programmable (OTP) cells and reading operation...
- Patent number 11,521,692
- Issue date Dec 6, 2022
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory having write detect circuitry
- Patent number 11,521,665
- Issue date Dec 6, 2022
- NXP USA, INC.
- Jacob T. Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with sense amplifiers
- Patent number 11,404,118
- Issue date Aug 2, 2022
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatle memory with virtual ground voltage provided to unselect...
- Patent number 11,348,628
- Issue date May 31, 2022
- NXP USA, INC.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with cells having multiple select transistors
- Patent number 11,328,784
- Issue date May 10, 2022
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with virtual ground voltage provided to unselec...
- Patent number 11,289,144
- Issue date Mar 29, 2022
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with multiplexer transistor regulator circuit
- Patent number 11,250,898
- Issue date Feb 15, 2022
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with select line voltage control
- Patent number 11,170,849
- Issue date Nov 9, 2021
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with a well bias generation circuit
- Patent number 11,145,382
- Issue date Oct 12, 2021
- NXP USA, INC.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with selectable hard write
- Patent number 11,056,160
- Issue date Jul 6, 2021
- NXP USA, INC.
- Richard Eguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive random access memory (MRAM) with OTP cells
- Patent number 11,049,539
- Issue date Jun 29, 2021
- NXP USA, INC.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference generation for voltage sensing in a resistive memory
- Patent number 10,984,846
- Issue date Apr 20, 2021
- NXP USA, INC.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) with OTP cells
- Patent number 10,861,524
- Issue date Dec 8, 2020
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with a select gate regulator circuit
- Patent number 10,796,741
- Issue date Oct 6, 2020
- NXP USA, INC.
- Jacob T. Williams
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage sampling switch
- Patent number 10,295,572
- Issue date May 21, 2019
- NXP USA, INC.
- Khoi Mai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory with a global reference circuit
- Patent number 10,224,088
- Issue date Mar 5, 2019
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge pump circuit for providing multiplied voltage
- Patent number 9,985,016
- Issue date May 29, 2018
- NXP USA, INC.
- Jon S. Choy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simulation of hierarchical circuit element arrays
- Patent number 9,940,418
- Issue date Apr 10, 2018
- NXP USA, INC.
- Srinivas Jallepalli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sense amplifier
- Patent number 9,767,877
- Issue date Sep 19, 2017
- NXP USA, INC.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit
- Patent number 9,741,417
- Issue date Aug 22, 2017
- NXP USA, INC.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit
- Patent number 9,741,435
- Issue date Aug 22, 2017
- NXP USA, INC.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier
- Patent number 9,659,622
- Issue date May 23, 2017
- NXP USA, INC.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile static random access memory (NVSRAM) system having a st...
- Patent number 9,640,256
- Issue date May 2, 2017
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for recovering voltage beyond device limits
- Patent number 9,627,964
- Issue date Apr 18, 2017
- NXP USA, INC.
- Jon Choy
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Charge pump circuit for providing multiplied voltage
- Patent number 9,621,033
- Issue date Apr 11, 2017
- NXP USA, INC.
- Jon S. Choy
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Voltage sampling switch and method therefor
- Patent number 9,484,905
- Issue date Nov 1, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Khoi B. Mai
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS
- Publication number 20240321372
- Publication date Sep 26, 2024
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
COLUMN REPAIR IN A MEMORY SYSTEM USING A REPAIR CACHE
- Publication number 20240143178
- Publication date May 2, 2024
- NXP USA, Inc.
- Jon Scott Choy
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH END OF LIFE MARGI...
- Publication number 20230410870
- Publication date Dec 21, 2023
- NXP USA, Inc.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Application
TESTING DISRUPTIVE MEMORIES
- Publication number 20230368859
- Publication date Nov 16, 2023
- NXP USA, Inc.
- Timothy Strauss
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY READ CIRCUITRY WITH A FLIPPED VOLTAGE FOLLOWER
- Publication number 20220383925
- Publication date Dec 1, 2022
- NXP USA, Inc.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY HAVING WRITE DETECT CIRCUITRY
- Publication number 20220358982
- Publication date Nov 10, 2022
- NXP USA, Inc.
- Jacob T. Williams
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS
- Publication number 20220301647
- Publication date Sep 22, 2022
- NXP USA, Inc.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH SENSE AMPLIFIERS
- Publication number 20220238153
- Publication date Jul 28, 2022
- NXP USA, Inc.
- Michael A. Sadd
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH CELLS HAVING MULTIPLE SELECT TRANSISTORS
- Publication number 20220101934
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH VIRTUAL GROUND VOLTAGE PROVIDED TO UNSELEC...
- Publication number 20220101903
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jon Scott Choy
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY HAVING VIRTUAL GROUND CIRCUITRY
- Publication number 20220101902
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH MULTIPLEXER TRANSISTOR REGULATOR CIRCUIT
- Publication number 20210319819
- Publication date Oct 14, 2021
- NXP USA, Inc.
- Padmaraj Sanjeevarao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SELECTABLE HARD WRITE
- Publication number 20210118475
- Publication date Apr 22, 2021
- NXP USA, Inc.
- Richard Eguchi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
REFERENCE GENERATION FOR VOLTAGE SENSING IN A RESISTIVE MEMORY
- Publication number 20210012821
- Publication date Jan 14, 2021
- NXP USA, Inc.
- Karthik Ramanan
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER
- Publication number 20170213584
- Publication date Jul 27, 2017
- NXP USA, Inc.
- JON S. CHOY
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE PUMP CIRCUIT FOR PROVIDING MULTIPLIED VOLTAGE
- Publication number 20170170163
- Publication date Jun 15, 2017
- NXP USA, Inc.
- JON S. CHOY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE PUMP CIRCUIT FOR PROVIDING MULTIPLIED VOLTAGE
- Publication number 20170070137
- Publication date Mar 9, 2017
- FREESCALE SEMICONDUCTOR, INC.
- JON S. CHOY
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Simulation of Hierarchical Circuit Element Arrays
- Publication number 20170024502
- Publication date Jan 26, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Srinivas Jallepalli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FLASH MEMORY WITH IMPROVED READ PERFORMANCE
- Publication number 20160064092
- Publication date Mar 3, 2016
- ANIRBAN ROY
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL GATE DRIVER FOR USE WITH SPLIT GATE MEMORY CELLS
- Publication number 20150371711
- Publication date Dec 24, 2015
- Freescale Semiconductor Inc.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE CHARGE PUMP REGULATION
- Publication number 20140269132
- Publication date Sep 18, 2014
- Freescale, Inc.
- Jon S. Choy
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Temperature-Based Adaptive Erase or Program Parallelism
- Publication number 20140254285
- Publication date Sep 11, 2014
- Richard K. Eguchi
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER VOLTAGE REGULATOR
- Publication number 20140241091
- Publication date Aug 28, 2014
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR ADAPTIVE SOFT PROGRAMMING FOR NON-VOLATILE...
- Publication number 20140204694
- Publication date Jul 24, 2014
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE RAMP-UP PROTECTION
- Publication number 20140145765
- Publication date May 29, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jon S. Choy
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SYSTEMS AND METHODS FOR CONTROLLING POWER IN SEMICONDUCTOR CIRCUITS
- Publication number 20140145699
- Publication date May 29, 2014
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY ROBUST START-UP USING ANALOG-TO-DIGITAL CONVERTER
- Publication number 20140140161
- Publication date May 22, 2014
- Richard K. Eguchi
- G11 - INFORMATION STORAGE
Information Patent Application
ERROR DETECTION AT AN OSCILLATOR
- Publication number 20140022022
- Publication date Jan 23, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jon S. Choy
- G01 - MEASURING TESTING
Information Patent Application
ERASE RAMP PULSE WIDTH CONTROL FOR NON-VOLATILE MEMORY
- Publication number 20120201082
- Publication date Aug 9, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jon S. Choy
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MULTI-STATE NON-VOLATILE MEMORY (NVM)
- Publication number 20120113714
- Publication date May 10, 2012
- Jon S. Choy
- G11 - INFORMATION STORAGE

Jon S. Choy

Person

Patents Grantslast 30 patents

Magnetoresistive random access memory (MRAM) with end of life margi...

Testing disruptive memories

Column repair in a memory system using a repair cache

Memory read circuitry with a flipped voltage follower

Memory with one-time programmable (OTP) cells and reading operation...

Non-volatile memory having write detect circuitry

Memory with sense amplifiers

Non-volatle memory with virtual ground voltage provided to unselect...

Memory with cells having multiple select transistors

Non-volatile memory with virtual ground voltage provided to unselec...

Non-volatile memory with multiplexer transistor regulator circuit

Memory with select line voltage control

Non-volatile memory with a well bias generation circuit

Non-volatile memory with selectable hard write

Magnetoresistive random access memory (MRAM) with OTP cells

Reference generation for voltage sensing in a resistive memory

Magnetoresistive random access memory (MRAM) with OTP cells

Non-volatile memory with a select gate regulator circuit

Voltage sampling switch

Memory with a global reference circuit

Charge pump circuit for providing multiplied voltage

Simulation of hierarchical circuit element arrays

Sense amplifier

Sense amplifier circuit

Sense amplifier circuit

Sense amplifier

Nonvolatile static random access memory (NVSRAM) system having a st...

Systems and methods for recovering voltage beyond device limits

Charge pump circuit for providing multiplied voltage

Voltage sampling switch and method therefor

Patents Applicationslast 30 patents

MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS

COLUMN REPAIR IN A MEMORY SYSTEM USING A REPAIR CACHE

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH END OF LIFE MARGI...

TESTING DISRUPTIVE MEMORIES

MEMORY READ CIRCUITRY WITH A FLIPPED VOLTAGE FOLLOWER

NON-VOLATILE MEMORY HAVING WRITE DETECT CIRCUITRY

MEMORY WITH ONE-TIME PROGRAMMABLE (OTP) CELLS

MEMORY WITH SENSE AMPLIFIERS

MEMORY WITH CELLS HAVING MULTIPLE SELECT TRANSISTORS

NON-VOLATILE MEMORY WITH VIRTUAL GROUND VOLTAGE PROVIDED TO UNSELEC...

NON-VOLATILE MEMORY HAVING VIRTUAL GROUND CIRCUITRY

NON-VOLATILE MEMORY WITH MULTIPLEXER TRANSISTOR REGULATOR CIRCUIT

NON-VOLATILE MEMORY WITH SELECTABLE HARD WRITE

REFERENCE GENERATION FOR VOLTAGE SENSING IN A RESISTIVE MEMORY

SENSE AMPLIFIER

CHARGE PUMP CIRCUIT FOR PROVIDING MULTIPLIED VOLTAGE

CHARGE PUMP CIRCUIT FOR PROVIDING MULTIPLIED VOLTAGE

Simulation of Hierarchical Circuit Element Arrays

FLASH MEMORY WITH IMPROVED READ PERFORMANCE

CONTROL GATE DRIVER FOR USE WITH SPLIT GATE MEMORY CELLS

NEGATIVE CHARGE PUMP REGULATION

Temperature-Based Adaptive Erase or Program Parallelism

SENSE AMPLIFIER VOLTAGE REGULATOR

SYSTEMS AND METHODS FOR ADAPTIVE SOFT PROGRAMMING FOR NON-VOLATILE...

VOLTAGE RAMP-UP PROTECTION

SYSTEMS AND METHODS FOR CONTROLLING POWER IN SEMICONDUCTOR CIRCUITS

NON-VOLATILE MEMORY ROBUST START-UP USING ANALOG-TO-DIGITAL CONVERTER

ERROR DETECTION AT AN OSCILLATOR

ERASE RAMP PULSE WIDTH CONTROL FOR NON-VOLATILE MEMORY

METHOD FOR PROGRAMMING A MULTI-STATE NON-VOLATILE MEMORY (NVM)