Jonathan Philip Davis

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Glen Allen, VA, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a gate contact in a semiconductor device
- Patent number 6,927,462
- Issue date Aug 9, 2005
- Infineon Technologes Richmond, LP
- Francis Goodwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM having improved leakage performance and method for making same
- Patent number 6,818,534
- Issue date Nov 16, 2004
- Infineon Technologies Richmond, LP
- Jonathan Philip Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization process to achieve improved uniformity across semicon...
- Patent number 6,472,291
- Issue date Oct 29, 2002
- Infineon Technologies North America Corp.
- Joseph E. Page
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon corner rounding by ion implantation for shallow trench isol...
- Patent number 6,174,787
- Issue date Jan 16, 2001
- White Oak Semiconductor Partnership
- Robert Fuller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DRAM on SOI
- Publication number 20060105519
- Publication date May 18, 2006
- Infineon Technologies Richmond, LP
- Jonathan Philip Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a gate contact in a semiconductor device
- Publication number 20040043592
- Publication date Mar 4, 2004
- Infineon Technologies Richmond, LP
- Francis Goodwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM having improved leakage performance and method for making same
- Publication number 20040031992
- Publication date Feb 19, 2004
- Infineon Technologies Richmond, LP
- Jonathan Philip Davis
- H01 - BASIC ELECTRIC ELEMENTS