Jonathan Rullan

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Albany, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Void-free copper filling of recessed features for semiconductor dev...
- Patent number 7,884,012
- Issue date Feb 8, 2011
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating selective low-temperature ruthenium depositi...
- Patent number 7,776,740
- Issue date Aug 17, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
THIN FILM FORMING METHOD
- Publication number 20130252417
- Publication date Sep 26, 2013
- TOKYO ELECTRON LIMITED
- Tadahiro ISHIZAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITI...
- Publication number 20090186481
- Publication date Jul 23, 2009
- TOKYO ELECTRON LIMITED
- Kenji SUZUKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEV...
- Publication number 20090087981
- Publication date Apr 2, 2009
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS