Jonathan T. Bessette

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Montpelier, VT, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for high-concentration doping of germanium with phosphorous
- Patent number 10,680,413
- Issue date Jun 9, 2020
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-concentration active doping in semiconductors and semiconducto...
- Patent number 9,692,209
- Issue date Jun 27, 2017
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for High-Concentration Doping of Germanium with Phosphorous
- Publication number 20180198256
- Publication date Jul 12, 2018
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Concentration Active Doping in Semiconductors and Semiconducto...
- Publication number 20140254620
- Publication date Sep 11, 2014
- Massachusetts Institute of Technology
- Jonathan T. Bessette
- H01 - BASIC ELECTRIC ELEMENTS