Jonathan Z. Sun

Person

Shrub Oak, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device with spin-harvesting structure
- Patent number 11,823,723
- Issue date Nov 21, 2023
- International Business Machines Corporation
- Christopher Safranski
- G11 - INFORMATION STORAGE
Information Patent Grant
Double magnetic tunnel junction device
- Patent number 11,778,921
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant synthetic antiferromagnet reference layered structure
- Patent number 11,574,667
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Christopher Safranski
- G11 - INFORMATION STORAGE
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 11,527,707
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction based true random number generator
- Patent number 11,487,508
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Inverted wide base double magnetic tunnel junction device
- Patent number 11,316,104
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction having all-around structure
- Patent number 11,289,644
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Kotb Jabeur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified double magnetic tunnel junction structure suitable for BEO...
- Patent number 11,171,283
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin hall write select for magneto-resistive random access memory
- Patent number 11,164,615
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-based storage element
- Patent number 10,777,247
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 10,553,781
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 10,374,145
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three terminal spin hall MRAM
- Patent number 10,229,722
- Issue date Mar 12, 2019
- International Business Machines Corporation
- John K. DeBrosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Domain wall control in ferroelectric devices
- Patent number 10,109,336
- Issue date Oct 23, 2018
- International Business Machines Corporation
- Martin M. Frank
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) based true random number generators...
- Patent number 10,078,496
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Suyog Gupta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin hall write select for magneto-resistive random access memory
- Patent number 9,947,383
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...
- Patent number 9,715,917
- Issue date Jul 25, 2017
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...
- Patent number 9,647,204
- Issue date May 9, 2017
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Read circuit for memory
- Patent number 9,355,700
- Issue date May 31, 2016
- International Business Machines Corporation
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Utilization of the anomalous hall effect or polarized spin hall eff...
- Patent number 9,269,415
- Issue date Feb 23, 2016
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Read circuit for memory
- Patent number 9,105,342
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-torque based memory device with read and write current paths m...
- Patent number 8,927,301
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current switchable magnetic memory element and method of fabri...
- Patent number 8,861,262
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current switched magnetic memory element suitable for circuit...
- Patent number 8,860,105
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic devices and structures
- Patent number 8,717,808
- Issue date May 6, 2014
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current switched magnetic memory element suitable for circuit...
- Patent number 8,558,332
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Noncontact writing of nanometer scale magnetic bits using heat flow...
- Patent number 8,456,894
- Issue date Jun 4, 2013
- International Business Machines Corporation
- David W. Abraham
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-torque based memory device using a magnesium oxide tunnel barrier
- Patent number 8,406,040
- Issue date Mar 26, 2013
- International Business Machines Corporation
- Daniel C. Worledge
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-current switchable magnetic memory element and method of fabri...
- Patent number 8,310,863
- Issue date Nov 13, 2012
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Optimized free layer for spin torque magnetic random access memory
- Patent number 8,283,741
- Issue date Oct 9, 2012
- International Business Machines Corporation
- Guohan Hu
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Memory Device with Spin-Harvesting Structure
- Publication number 20230162773
- Publication date May 25, 2023
- International Business Machines Corporation
- Christopher Safranski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20220199898
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONANT SYNTHETIC ANTIFERROMAGNET REFERENCE LAYERED STRUCTURE
- Publication number 20220157358
- Publication date May 19, 2022
- International Business Machines Corporation
- Christopher Safranski
- G11 - INFORMATION STORAGE
Information Patent Application
INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20210288246
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction Having All-Around Structure
- Publication number 20210193910
- Publication date Jun 24, 2021
- International Business Machines Corporation
- Kotb Jabeur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE SUITABLE FOR BEO...
- Publication number 20210135090
- Publication date May 6, 2021
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION BASED TRUE RANDOM NUMBER GENERATOR
- Publication number 20200326911
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Rasit O. Topaloglu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN-BASED STORAGE ELEMENT
- Publication number 20200312391
- Publication date Oct 1, 2020
- International Business Machines Corporation
- Jonathan Zanhong Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...
- Publication number 20200083438
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three Terminal Spin Hall MRAM
- Publication number 20190043547
- Publication date Feb 7, 2019
- International Business Machines Corporation
- John K. DeBrosse
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) BASED TRUE RANDOM NUMBER GENERATORS...
- Publication number 20180239590
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Suyog Gupta
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN HALL WRITE SELECT FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20180240508
- Publication date Aug 23, 2018
- International Business Machines Corporation
- LUQIAO LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...
- Publication number 20170194556
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...
- Publication number 20170110506
- Publication date Apr 20, 2017
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE MRAM BASED ON CO, IR SYNTHETIC ANTIFERROMAGNETIC MULTIL...
- Publication number 20170110655
- Publication date Apr 20, 2017
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
Spin Torque MRAM Based on Co, Ir Synthetic Antiferromagnetic Multil...
- Publication number 20160163966
- Publication date Jun 9, 2016
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
READ CIRCUIT FOR MEMORY
- Publication number 20150138879
- Publication date May 21, 2015
- International Business Machines Corporation
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20150001655
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Jonathan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ CIRCUIT FOR MEMORY
- Publication number 20140211550
- Publication date Jul 31, 2014
- HEADWAY TECHNOLOGIES, INC.
- Jonathan Z. Sun
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20140008743
- Publication date Jan 9, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRI...
- Publication number 20130009261
- Publication date Jan 10, 2013
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE MAGNETORESISTIVE STRUCTURES WITH BILAYER FREE LAYER
- Publication number 20120329177
- Publication date Dec 27, 2012
- International Business Machines Corporation
- David William Abraham
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...
- Publication number 20120288964
- Publication date Nov 15, 2012
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Application
NONCONTACT WRITING OF NANOMETER SCALE MAGNETIC BITS USING HEAT FLOW...
- Publication number 20120281460
- Publication date Nov 8, 2012
- International Business Machines Corporation
- David W. Abraham
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICES AND STRUCTURES
- Publication number 20120241885
- Publication date Sep 27, 2012
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...
- Publication number 20110194341
- Publication date Aug 11, 2011
- International Business Machines Corporation
- Michael C. Gaidis
- G11 - INFORMATION STORAGE
Information Patent Application
OPTIMIZED FREE LAYER FOR SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110169111
- Publication date Jul 14, 2011
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE BASED MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNEL BARRIER
- Publication number 20110171493
- Publication date Jul 14, 2011
- International Business Machines Corporation
- Daniel C. Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20110147866
- Publication date Jun 23, 2011
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRI...
- Publication number 20110124133
- Publication date May 26, 2011
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE

Jonathan Z. Sun

Person

Patents Grantslast 30 patents

Memory device with spin-harvesting structure

Double magnetic tunnel junction device

Resonant synthetic antiferromagnet reference layered structure

In-situ annealing and etch back steps to improve exchange stiffness...

Magnetic tunnel junction based true random number generator

Inverted wide base double magnetic tunnel junction device

Magnetic tunnel junction having all-around structure

Modified double magnetic tunnel junction structure suitable for BEO...

Spin hall write select for magneto-resistive random access memory

Spin-based storage element

In-situ annealing and etch back steps to improve exchange stiffness...

In-situ annealing and etch back steps to improve exchange stiffness...

Three terminal spin hall MRAM

Domain wall control in ferroelectric devices

Magnetic tunnel junction (MTJ) based true random number generators...

Spin hall write select for magneto-resistive random access memory

Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...

Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...

Read circuit for memory

Utilization of the anomalous hall effect or polarized spin hall eff...

Read circuit for memory

Spin-torque based memory device with read and write current paths m...

Spin-current switchable magnetic memory element and method of fabri...

Spin-current switched magnetic memory element suitable for circuit...

Magnetic devices and structures

Spin-current switched magnetic memory element suitable for circuit...

Noncontact writing of nanometer scale magnetic bits using heat flow...

Spin-torque based memory device using a magnesium oxide tunnel barrier

Spin-current switchable magnetic memory element and method of fabri...

Optimized free layer for spin torque magnetic random access memory

Patents Applicationslast 30 patents

Memory Device with Spin-Harvesting Structure

DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

RESONANT SYNTHETIC ANTIFERROMAGNET REFERENCE LAYERED STRUCTURE

INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

Magnetic Tunnel Junction Having All-Around Structure

MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE SUITABLE FOR BEO...

MAGNETIC TUNNEL JUNCTION BASED TRUE RANDOM NUMBER GENERATOR

SPIN-BASED STORAGE ELEMENT

IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...

Three Terminal Spin Hall MRAM

MAGNETIC TUNNEL JUNCTION (MTJ) BASED TRUE RANDOM NUMBER GENERATORS...

SPIN HALL WRITE SELECT FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY

IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...

IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...

SPIN TORQUE MRAM BASED ON CO, IR SYNTHETIC ANTIFERROMAGNETIC MULTIL...

Spin Torque MRAM Based on Co, Ir Synthetic Antiferromagnetic Multil...

READ CIRCUIT FOR MEMORY

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

READ CIRCUIT FOR MEMORY

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRI...

SPIN-TORQUE MAGNETORESISTIVE STRUCTURES WITH BILAYER FREE LAYER

SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...

NONCONTACT WRITING OF NANOMETER SCALE MAGNETIC BITS USING HEAT FLOW...

MAGNETIC DEVICES AND STRUCTURES

SPIN-TORQUE BASED MEMORY DEVICE WITH READ AND WRITE CURRENT PATHS M...

OPTIMIZED FREE LAYER FOR SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY

SPIN-TORQUE BASED MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNEL BARRIER

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRI...