Jong Mun Park

Person

Graz, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor photodetector device with protection against ambient...
- Patent number 11,145,686
- Issue date Oct 12, 2021
- ams AG
- Victor Sidorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a symmetric LDMOS transistor
- Patent number 10,510,881
- Issue date Dec 17, 2019
- AMS AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device with separate source and body contac...
- Patent number 10,283,635
- Issue date May 7, 2019
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric LDMOS transistor including a well of a first type of cond...
- Patent number 9,698,257
- Issue date Jul 4, 2017
- ams AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for producing a field-effect tra...
- Patent number 8,969,961
- Issue date Mar 3, 2015
- AMS AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel LDMOS transistor and method of producing a p-channel LDMO...
- Patent number 8,963,243
- Issue date Feb 24, 2015
- AMS AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a trench isolation and method of manufact...
- Patent number 8,502,308
- Issue date Aug 6, 2013
- AMS AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple gate oxides with shallow trench isolation m...
- Patent number 8,227,318
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with improved high stride performance
- Patent number 8,212,318
- Issue date Jul 3, 2012
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage NMOS-transistor and associated production method
- Patent number 7,898,030
- Issue date Mar 1, 2011
- austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT...
- Publication number 20200251520
- Publication date Aug 6, 2020
- ams AG
- Victor Sidorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE WITH SEPARATE SOURCE AND BODY CONTAC...
- Publication number 20180130906
- Publication date May 10, 2018
- ams AG
- Martin KNAIPP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SYMMETRIC LDMOS TRANSISTOR
- Publication number 20170301790
- Publication date Oct 19, 2017
- ams AG
- Jong Mun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC LDMOS TRANSISTOR AND METHOD OF PRODUCTION
- Publication number 20130207180
- Publication date Aug 15, 2013
- ams AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL LDMOS TRANSISTOR AND METHOD OF PRODUCING A P-CHANNEL LDMO...
- Publication number 20130168769
- Publication date Jul 4, 2013
- ams AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Multiple Gate Oxides with Shallow Trench Isolation M...
- Publication number 20110117714
- Publication date May 19, 2011
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Method for Producing a Field-Effect Tra...
- Publication number 20100308404
- Publication date Dec 9, 2010
- AUSTRIAMICROSYSTEMS AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH IMPROVED HIGH STRIDE PERFORMANCE
- Publication number 20090321822
- Publication date Dec 31, 2009
- austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Trench Isolation and Method of Manufact...
- Publication number 20090273030
- Publication date Nov 5, 2009
- austriamicrosystems AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Nmos-Transistor and Associated Production Method
- Publication number 20070278570
- Publication date Dec 6, 2007
- AUSTRIAMICROSYSTEMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS

Jong Mun Park

Person

Patents Grantslast 30 patents

Semiconductor photodetector device with protection against ambient...

Method of producing a symmetric LDMOS transistor

Field effect transistor device with separate source and body contac...

Symmetric LDMOS transistor including a well of a first type of cond...

Field-effect transistor and method for producing a field-effect tra...

P-channel LDMOS transistor and method of producing a p-channel LDMO...

Semiconductor device with a trench isolation and method of manufact...

Integration of multiple gate oxides with shallow trench isolation m...

High-voltage transistor with improved high stride performance

High-voltage NMOS-transistor and associated production method

Patents Applicationslast 30 patents

SEMICONDUCTOR PHOTODETECTOR DEVICE WITH PROTECTION AGAINST AMBIENT...

FIELD EFFECT TRANSISTOR DEVICE WITH SEPARATE SOURCE AND BODY CONTAC...

METHOD OF PRODUCING A SYMMETRIC LDMOS TRANSISTOR

SYMMETRIC LDMOS TRANSISTOR AND METHOD OF PRODUCTION

P-CHANNEL LDMOS TRANSISTOR AND METHOD OF PRODUCING A P-CHANNEL LDMO...

Integration of Multiple Gate Oxides with Shallow Trench Isolation M...

Field-Effect Transistor and Method for Producing a Field-Effect Tra...

HIGH-VOLTAGE TRANSISTOR WITH IMPROVED HIGH STRIDE PERFORMANCE

Semiconductor Device with a Trench Isolation and Method of Manufact...

High-Voltage Nmos-Transistor and Associated Production Method