Joon Goo Hong

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor cell blocks having non-integer multiple of cell heights
- Patent number 12,080,703
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...
- Patent number 11,727,258
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit devices including an element having a non-linear...
- Patent number 11,581,423
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Kang Ill Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimization of sparsified neural network layers for semi-digital c...
- Patent number 11,556,768
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Ryan Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor cell blocks having non-integer multiple of cell heights
- Patent number 11,552,067
- Issue date Jan 10, 2023
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Variation mitigation scheme for semi-digital mac array with a 2T-2...
- Patent number 11,475,933
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Ryan Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...
- Patent number 11,461,620
- Issue date Oct 4, 2022
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of manufacturing an integrated circuit with buried power rail
- Patent number 11,233,008
- Issue date Jan 25, 2022
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite piezoelectric capacitor
- Patent number 11,217,392
- Issue date Jan 4, 2022
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of modulating threshold voltage for fin field...
- Patent number 11,211,493
- Issue date Dec 28, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
4T4R ternary weight cell with high on/off ratio background
- Patent number 11,182,686
- Issue date Nov 23, 2021
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
System and method for efficient enhancement of an on/off ratio of a...
- Patent number 11,101,320
- Issue date Aug 24, 2021
- Samsung Electronics Co., Ltd.
- Ryan Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of forming backside buried conductor in integr...
- Patent number 10,985,103
- Issue date Apr 20, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced extension resistance and methods of manufacturi...
- Patent number 10,957,786
- Issue date Mar 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low current leakage finFET and methods of making the same
- Patent number 10,930,768
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a reverse engineering resistant har...
- Patent number 10,916,513
- Issue date Feb 9, 2021
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Integrated circuit including field effect transistors having a cont...
- Patent number 10,910,313
- Issue date Feb 2, 2021
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power distribution network using buried power rail
- Patent number 10,886,224
- Issue date Jan 5, 2021
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T2R binary weight cell with high on/off ratio background
- Patent number 10,872,662
- Issue date Dec 22, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanosheet field effect transistor cell architecture
- Patent number 10,868,193
- Issue date Dec 15, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including field effect transistors having a cont...
- Patent number 10,861,950
- Issue date Dec 8, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variation resistant 3T3R binary weight cell with low output current...
- Patent number 10,832,774
- Issue date Nov 10, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 10,825,723
- Issue date Nov 3, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 10,811,415
- Issue date Oct 20, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complimentary metal-oxide-semiconductor circuit having transistors...
- Patent number 10,727,297
- Issue date Jul 28, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively increasing silicon fin area for vertical fie...
- Patent number 10,644,031
- Issue date May 5, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing source and drain doping for CMOS architecture i...
- Patent number 10,586,738
- Issue date Mar 10, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively increasing silicon fin area for vertical fie...
- Patent number 10,497,719
- Issue date Dec 3, 2019
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a reverse-engineering resistant har...
- Patent number 10,381,315
- Issue date Aug 13, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Field effect transistor with stacked nanowire-like channels and met...
- Patent number 10,312,152
- Issue date Jun 4, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS
- Publication number 20240379653
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS
- Publication number 20230104185
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-BIT, SoC-COMPATIBLE NEUROMORPHIC WEIGHT CELL USING FERROELECT...
- Publication number 20230004789
- Publication date Jan 5, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...
- Publication number 20220139835
- Publication date May 5, 2022
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING AN ELEMENT HAVING A NON-LINEAR...
- Publication number 20210384324
- Publication date Dec 9, 2021
- Samsung Electronics Co., Ltd.
- KANG ILL SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS
- Publication number 20210265334
- Publication date Aug 26, 2021
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3T2R BINARY WEIGHT CELL WITH HIGH ON/OFF FOR MEMORY DEVICE PROGRAMM...
- Publication number 20210118950
- Publication date Apr 22, 2021
- Samsung Electronics Co., Ltd.
- Ryan Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIATION MITIGATION SCHEME FOR SEMI-DIGITAL MAC ARRAY WITH A 2T-2...
- Publication number 20210057011
- Publication date Feb 25, 2021
- SAMSUNG ELECTRONICS CO., LTD.
- Ryan HATCHER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPARATUS AND METHOD OF MODULATING THRESHOLD VOLTAGE FOR FIN FIELD...
- Publication number 20200403093
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...
- Publication number 20200402909
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DISTRIBUTION NETWORK USING BURIED POWER RAIL
- Publication number 20200373241
- Publication date Nov 26, 2020
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD OF FORMING BACKSIDE BURIED CONDUCTOR IN INTEGR...
- Publication number 20200279811
- Publication date Sep 3, 2020
- SAMSUNG ELECTRONICS CO., LTD.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIATION RESISTANT 3T3R BINARY WEIGHT CELL WITH LOW OUTPUT CURRENT...
- Publication number 20200279605
- Publication date Sep 3, 2020
- SAMSUNG ELECTRONICS CO., LTD.
- Ryan M. HATCHER
- G11 - INFORMATION STORAGE
Information Patent Application
4T4R TERNARY WEIGHT CELL WITH HIGH ON/OFF RATIO BACKGROUND
- Publication number 20200279176
- Publication date Sep 3, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. HATCHER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
2T2R BINARY WEIGHT CELL WITH HIGH ON/OFF RATIO BACKGROUND
- Publication number 20200265892
- Publication date Aug 20, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. HATCHER
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITE PIEZOELECTRIC CAPACITOR
- Publication number 20200234881
- Publication date Jul 23, 2020
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTOR CELL ARCHITECTURE
- Publication number 20200152801
- Publication date May 14, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20200135735
- Publication date Apr 30, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20200135549
- Publication date Apr 30, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME
- Publication number 20200127125
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURI...
- Publication number 20200127123
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...
- Publication number 20200066762
- Publication date Feb 27, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...
- Publication number 20190318998
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING FIELD EFFECT TRANSISTORS HAVING A CONT...
- Publication number 20190148298
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...
- Publication number 20190148312
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...
- Publication number 20190148410
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL ARCHITECTURE WITH CONTACT ON ACTIVE GATE COMPATIBLE WITH A SMA...
- Publication number 20190148502
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROVIDING SOURCE AND DRAIN DOPING FOR CMOS ARCHITECTURE I...
- Publication number 20190131182
- Publication date May 2, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Bit, SoC-Compatible Neuromorphic Weight Cell Using Ferroelect...
- Publication number 20190012593
- Publication date Jan 10, 2019
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH STACKED NANOWIRE-LIKE CHANNELS AND MET...
- Publication number 20180114727
- Publication date Apr 26, 2018
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS

Joon Goo Hong

Person

Patents Grantslast 30 patents

Semiconductor cell blocks having non-integer multiple of cell heights

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...

Integrated circuit devices including an element having a non-linear...

Optimization of sparsified neural network layers for semi-digital c...

Semiconductor cell blocks having non-integer multiple of cell heights

Variation mitigation scheme for semi-digital mac array with a 2T-2...

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...

Method of manufacturing an integrated circuit with buried power rail

Composite piezoelectric capacitor

Apparatus and method of modulating threshold voltage for fin field...

4T4R ternary weight cell with high on/off ratio background

System and method for efficient enhancement of an on/off ratio of a...

Apparatus and method of forming backside buried conductor in integr...

FinFET with reduced extension resistance and methods of manufacturi...

Low current leakage finFET and methods of making the same

Method and system for providing a reverse engineering resistant har...

Integrated circuit including field effect transistors having a cont...

Power distribution network using buried power rail

2T2R binary weight cell with high on/off ratio background

Nanosheet field effect transistor cell architecture

Integrated circuit including field effect transistors having a cont...

Variation resistant 3T3R binary weight cell with low output current...

Semiconductor device and method for making the same

Semiconductor device and method for making the same

Complimentary metal-oxide-semiconductor circuit having transistors...

Method for selectively increasing silicon fin area for vertical fie...

Method of providing source and drain doping for CMOS architecture i...

Method for selectively increasing silicon fin area for vertical fie...

Method and system for providing a reverse-engineering resistant har...

Field effect transistor with stacked nanowire-like channels and met...

Patents Applicationslast 30 patents

SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS

SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS

MULTI-BIT, SoC-COMPATIBLE NEUROMORPHIC WEIGHT CELL USING FERROELECT...

INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...

INTEGRATED CIRCUIT DEVICES INCLUDING AN ELEMENT HAVING A NON-LINEAR...

SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS

3T2R BINARY WEIGHT CELL WITH HIGH ON/OFF FOR MEMORY DEVICE PROGRAMM...

VARIATION MITIGATION SCHEME FOR SEMI-DIGITAL MAC ARRAY WITH A 2T-2...

APPARATUS AND METHOD OF MODULATING THRESHOLD VOLTAGE FOR FIN FIELD...

INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...

POWER DISTRIBUTION NETWORK USING BURIED POWER RAIL

APPARATUS AND METHOD OF FORMING BACKSIDE BURIED CONDUCTOR IN INTEGR...

VARIATION RESISTANT 3T3R BINARY WEIGHT CELL WITH LOW OUTPUT CURRENT...

4T4R TERNARY WEIGHT CELL WITH HIGH ON/OFF RATIO BACKGROUND

2T2R BINARY WEIGHT CELL WITH HIGH ON/OFF RATIO BACKGROUND

COMPOSITE PIEZOELECTRIC CAPACITOR

NANOSHEET FIELD EFFECT TRANSISTOR CELL ARCHITECTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME

FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURI...

METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...

METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...

INTEGRATED CIRCUIT INCLUDING FIELD EFFECT TRANSISTORS HAVING A CONT...

METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...

METHOD FOR SELECTIVELY INCREASING SILICON FIN AREA FOR VERTICAL FIE...

CELL ARCHITECTURE WITH CONTACT ON ACTIVE GATE COMPATIBLE WITH A SMA...

METHOD OF PROVIDING SOURCE AND DRAIN DOPING FOR CMOS ARCHITECTURE I...

Multi-Bit, SoC-Compatible Neuromorphic Weight Cell Using Ferroelect...

FIELD EFFECT TRANSISTOR WITH STACKED NANOWIRE-LIKE CHANNELS AND MET...