Joong-S. Jeon

Person

Seongnam-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for extracting object information
- Patent number 11,200,694
- Issue date Dec 14, 2021
- SAMSUNG SDS CO., LTD.
- Hee-Sung Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit (IC) device
- Patent number 11,152,349
- Issue date Oct 19, 2021
- Samsung Electronics Co., Ltd.
- Hyun-jo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) device
- Patent number 11,145,640
- Issue date Oct 12, 2021
- Samsung Electronics Co., Ltd.
- Hyun-jo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of fins and method of fabri...
- Patent number 10,991,692
- Issue date Apr 27, 2021
- Samsung Electronics Co., Ltd.
- Myoung Ho Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) device
- Patent number 10,714,467
- Issue date Jul 14, 2020
- Samsung Electronics Co., Ltd.
- Hyun-jo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having first and second fin-type patterns and...
- Patent number 10,643,998
- Issue date May 5, 2020
- Samsung Electronics Co., Ltd.
- Myoung Ho Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having first and second fin-type patterns and...
- Patent number 10,475,789
- Issue date Nov 12, 2019
- Samsung Electroncis Co., Ltd.
- Myoung Ho Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing photomasks, methods of inspecting photomas...
- Patent number 10,409,169
- Issue date Sep 10, 2019
- Samsung Electronics Co., Ltd.
- Jeong-Lim Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device including a via hole in...
- Patent number 9,941,172
- Issue date Apr 10, 2018
- Samsung Electronics Co., Ltd.
- Jong-Doo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Terminal, system and method for measuring network state using the same
- Patent number 9,559,927
- Issue date Jan 31, 2017
- SAMSUNG SDS CO., LTD.
- Jin Bum Hwang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method of designing patterns of semiconductor devices in considerat...
- Patent number 9,557,637
- Issue date Jan 31, 2017
- Samsung Electronics Co., Ltd.
- Joong-Won Jeon
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Data transmitter apparatus and method for data communication using...
- Patent number 9,495,130
- Issue date Nov 15, 2016
- SAMSUNG SDS CO., LTD.
- Joong Bae Jeon
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor having germanium nanorod and method of manu...
- Patent number 9,318,573
- Issue date Apr 19, 2016
- Samsung Electronics Co., Ltd.
- Chang-Wook Moon
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transmitting and receiving side terminals and method of monitoring...
- Patent number 9,270,569
- Issue date Feb 23, 2016
- SAMSUNG SDS CO., LTD.
- Joong-Bae Jeon
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device having decoupling capacitors and dummy transis...
- Patent number 8,952,423
- Issue date Feb 10, 2015
- Samsung Electronics Co., Ltd.
- Joong-Won Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for ensuring fairness of UDP data transmission...
- Patent number 8,886,825
- Issue date Nov 11, 2014
- SAMSUNG SDS CO., LTD.
- Chang-Hoon Lee
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
CMOS transistor using germanium condensation and method of fabricat...
- Patent number 8,460,990
- Issue date Jun 11, 2013
- Samsung Electronics Co., Ltd.
- Jun-youn Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium silicide layer including vanadium, platinum, and nickel
- Patent number 8,232,613
- Issue date Jul 31, 2012
- Samsung Electronics Co., Ltd.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating non-volatile memory devices having carbon na...
- Patent number 8,193,030
- Issue date Jun 5, 2012
- Samsung Electronics Co., Ltd.
- Chang-wook Moon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device having a metal gate with a low sheet resistanc...
- Patent number 8,115,264
- Issue date Feb 14, 2012
- Samsung Electronics Co., Ltd.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Schottky barrier transistor
- Patent number 7,902,011
- Issue date Mar 8, 2011
- Samsung Electronics Co., Ltd.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory devices and methods of fabricating the same
- Patent number 7,884,410
- Issue date Feb 8, 2011
- Samsung Electronics Co., Ltd.
- Chang-wook Moon
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming a germanium silicide layer, semiconductor device...
- Patent number 7,863,142
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating metal gate of the same
- Patent number 7,800,186
- Issue date Sep 21, 2010
- Samsung Electronics Co., Ltd.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Schottky barrier transistor
- Patent number 7,674,665
- Issue date Mar 9, 2010
- Samsung Electronics Co., Ltd.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT (IC) DEVICE
- Publication number 20220028852
- Publication date Jan 27, 2022
- Samsung Electronics Co., Ltd.
- Hyun-jo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT (IC) DEVICE
- Publication number 20200273852
- Publication date Aug 27, 2020
- Samsung Electronics Co., Ltd.
- Hyun-jo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT (IC) DEVICE
- Publication number 20200273853
- Publication date Aug 27, 2020
- Samsung Electronics Co., Ltd.
- Hyun-jo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND FIN-TYPE PATTERNS AND...
- Publication number 20200235097
- Publication date Jul 23, 2020
- Samsung Electronics Co., Ltd.
- Myoung Ho Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR EXTRACTING OBJECT INFORMATION
- Publication number 20200134858
- Publication date Apr 30, 2020
- SAMSUNG SDS CO., LTD.
- Hee-Sung Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT (IC) DEVICE
- Publication number 20200066705
- Publication date Feb 27, 2020
- Samsung Electronics Co., Ltd.
- Hyun-jo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND FIN-TYPE PATTERNS AND...
- Publication number 20200043922
- Publication date Feb 6, 2020
- Samsung Electronics Co., Ltd.
- Myoung Ho Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20180286859
- Publication date Oct 4, 2018
- Samsung Electronics Co., Ltd.
- Myoung Ho Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING PHOTOMASKS, METHODS OF INSPECTING PHOTOMAS...
- Publication number 20170371250
- Publication date Dec 28, 2017
- Samsung Electronics Co., Ltd.
- Jeong-Lim KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Semiconductor Device
- Publication number 20170069533
- Publication date Mar 9, 2017
- Samsung Electronics Co., Ltd.
- Jong-Doo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA TRANSMITTER APPARATUS AND METHOD FOR DATA COMMUNICATION USING...
- Publication number 20160117148
- Publication date Apr 28, 2016
- SAMSUNG SDS CO., LTD.
- Joong Bae JEON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF DESIGNING PATTERNS OF SEMICONDUCTOR DEVICES
- Publication number 20150143312
- Publication date May 21, 2015
- Samsung Electronics Co., Ltd.
- Joong-Won JEON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA COMMUNICATIONS USING CONNECTIONLESS-ORIENTED PROTOCOL
- Publication number 20150117176
- Publication date Apr 30, 2015
- SAMSUNG SDS CO., LTD.
- Joong Bae JEON
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
TERMINAL, SYSTEM AND METHOD FOR MEASURING NETWORK STATE USING THE SAME
- Publication number 20140355464
- Publication date Dec 4, 2014
- SAMSUNG SDS CO., LTD.
- Jin Bum HWANG
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
TRANSMITTING AND RECEIVING SIDE TERMINALS AND METHOD OF MONITORING...
- Publication number 20140119214
- Publication date May 1, 2014
- SAMSUNG SDS CO., LTD.
- Joong-Bae JEON
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING GERMANIUM NANOROD AND METHOD OF MANU...
- Publication number 20130344664
- Publication date Dec 26, 2013
- Samsung Electronics Co., Ltd.
- Chang-Wook MOON
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DECOUPLING CAPACITORS AND DUMMY TRANSIS...
- Publication number 20130320405
- Publication date Dec 5, 2013
- Samsung Electronics Co., Ltd.
- Joong-Won JEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TRANSISTOR USING GERMANIUM CONDENSATION AND METHOD OF FABRICAT...
- Publication number 20120214282
- Publication date Aug 23, 2012
- Jun-youn KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR ENSURING FAIRNESS OF UDP DATA TRANSMISSION...
- Publication number 20120110205
- Publication date May 3, 2012
- SAMSUNG SDS CO., LTD.
- Chang-Hoon LEE
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Methods of fabricating non-volatile memory devices having carbon na...
- Publication number 20110117735
- Publication date May 19, 2011
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a germanium silicide layer, semiconductor device...
- Publication number 20110049587
- Publication date Mar 3, 2011
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating Schottky barrier transistor
- Publication number 20100112771
- Publication date May 6, 2010
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS transistor using germanium condensation and method of fabricat...
- Publication number 20090261381
- Publication date Oct 22, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jun-Youn KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating schottky barrier transistor
- Publication number 20090162983
- Publication date Jun 25, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a germanium silicide layer, semiconductor device...
- Publication number 20090146183
- Publication date Jun 11, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating metal gate of the same
- Publication number 20090065873
- Publication date Mar 12, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating metal gate of the same
- Publication number 20090057783
- Publication date Mar 5, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-ho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having germanium nanorod and method of manu...
- Publication number 20080272366
- Publication date Nov 6, 2008
- Chang-wook Moon
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nonvolatile memory devices and methods of fabricating the same
- Publication number 20080191261
- Publication date Aug 14, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Chang-wook Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a germanosilicide and a semiconductor devic...
- Publication number 20080164533
- Publication date Jul 10, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Hyun-Deok Yang
- H01 - BASIC ELECTRIC ELEMENTS

Joong-S. Jeon

Person

Patents Grantslast 30 patents

Apparatus and method for extracting object information

Integrated circuit (IC) device

Integrated circuit (IC) device

Semiconductor device having a plurality of fins and method of fabri...

Integrated circuit (IC) device

Semiconductor device having first and second fin-type patterns and...

Semiconductor device having first and second fin-type patterns and...

Methods of manufacturing photomasks, methods of inspecting photomas...

Method for fabricating semiconductor device including a via hole in...

Terminal, system and method for measuring network state using the same

Method of designing patterns of semiconductor devices in considerat...

Data transmitter apparatus and method for data communication using...

Field effect transistor having germanium nanorod and method of manu...

Transmitting and receiving side terminals and method of monitoring...

Semiconductor device having decoupling capacitors and dummy transis...

Apparatus and method for ensuring fairness of UDP data transmission...

CMOS transistor using germanium condensation and method of fabricat...

Germanium silicide layer including vanadium, platinum, and nickel

Methods of fabricating non-volatile memory devices having carbon na...

Semiconductor device having a metal gate with a low sheet resistanc...

Method of fabricating Schottky barrier transistor

Nonvolatile memory devices and methods of fabricating the same

Method of forming a germanium silicide layer, semiconductor device...

Semiconductor device and method of fabricating metal gate of the same

Method of fabricating Schottky barrier transistor

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT (IC) DEVICE

INTEGRATED CIRCUIT (IC) DEVICE

INTEGRATED CIRCUIT (IC) DEVICE

SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND FIN-TYPE PATTERNS AND...

APPARATUS AND METHOD FOR EXTRACTING OBJECT INFORMATION

INTEGRATED CIRCUIT (IC) DEVICE

SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND FIN-TYPE PATTERNS AND...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METHODS OF MANUFACTURING PHOTOMASKS, METHODS OF INSPECTING PHOTOMAS...

Method for Fabricating Semiconductor Device

DATA TRANSMITTER APPARATUS AND METHOD FOR DATA COMMUNICATION USING...

METHOD OF DESIGNING PATTERNS OF SEMICONDUCTOR DEVICES

DATA COMMUNICATIONS USING CONNECTIONLESS-ORIENTED PROTOCOL

TERMINAL, SYSTEM AND METHOD FOR MEASURING NETWORK STATE USING THE SAME

TRANSMITTING AND RECEIVING SIDE TERMINALS AND METHOD OF MONITORING...

FIELD EFFECT TRANSISTOR HAVING GERMANIUM NANOROD AND METHOD OF MANU...

SEMICONDUCTOR DEVICE HAVING DECOUPLING CAPACITORS AND DUMMY TRANSIS...

CMOS TRANSISTOR USING GERMANIUM CONDENSATION AND METHOD OF FABRICAT...

APPARATUS AND METHOD FOR ENSURING FAIRNESS OF UDP DATA TRANSMISSION...

Methods of fabricating non-volatile memory devices having carbon na...

Method of forming a germanium silicide layer, semiconductor device...

Method of fabricating Schottky barrier transistor

CMOS transistor using germanium condensation and method of fabricat...

Method of fabricating schottky barrier transistor

Method of forming a germanium silicide layer, semiconductor device...

Semiconductor device and method of fabricating metal gate of the same

Semiconductor device and method of fabricating metal gate of the same

Field effect transistor having germanium nanorod and method of manu...

Nonvolatile memory devices and methods of fabricating the same

Method of manufacturing a germanosilicide and a semiconductor devic...