Josef Georg Bauer

Person

Markt Indersdorf, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Ppower semiconductor device with anticorrosive edge termination str...
- Patent number 11,387,359
- Issue date Jul 12, 2022
- Infineon Technologies AG
- Oliver Humbel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device termination structure
- Patent number 10,388,722
- Issue date Aug 20, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer
- Patent number 9,859,395
- Issue date Jan 2, 2018
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device and method of manufacturing thereof
- Patent number 9,484,221
- Issue date Nov 1, 2016
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting the charge carrier lifetime in a bipolar semiconductor de...
- Patent number 9,349,799
- Issue date May 24, 2016
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with vertically inhomogeneous heavy metal dopi...
- Patent number 9,263,529
- Issue date Feb 16, 2016
- Infineon Technologies Austria AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting the charge carrier lifetime in a bipolar semiconductor de...
- Patent number 9,209,027
- Issue date Dec 8, 2015
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a vertically inhomogeneous platinum or gold dis...
- Patent number 8,999,826
- Issue date Apr 7, 2015
- Infineon Technologies Austria AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer
- Patent number 8,884,342
- Issue date Nov 11, 2014
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a vertically inhomogeneous platinum or gold dis...
- Patent number 8,440,553
- Issue date May 14, 2013
- Infineon Technologies Austria AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a semiconductor body and method for its p...
- Patent number 7,880,260
- Issue date Feb 1, 2011
- Infineon Technology Austria AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor element with an emitter region and a stop zone...
- Patent number 7,612,388
- Issue date Nov 3, 2009
- Infineon Technologies AG
- Josef-Georg Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor component
- Patent number 7,233,031
- Issue date Jun 19, 2007
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component for high reverse voltages
- Patent number 6,441,408
- Issue date Aug 27, 2002
- Infineon Technologies AG
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device and Method
- Publication number 20200357883
- Publication date Nov 12, 2020
- INFINEON TECHNOLOGIES AG
- Manfred Pfaffenlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200194585
- Publication date Jun 18, 2020
- Oliver Humbel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE
- Publication number 20180114841
- Publication date Apr 26, 2018
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjusting the Charge Carrier Lifetime in a Bipolar Semiconductor De...
- Publication number 20160049474
- Publication date Feb 18, 2016
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Semiconductor Device and Method of Manufacturing Thereof
- Publication number 20150200247
- Publication date Jul 16, 2015
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a Vertically Inhomogeneous Platinum or Gold Dis...
- Publication number 20150194491
- Publication date Jul 9, 2015
- Infineon Technologies Austria AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer
- Publication number 20150056788
- Publication date Feb 26, 2015
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer
- Publication number 20140061733
- Publication date Mar 6, 2014
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a Vertically Inhomogeneous Platinum or Gold Dis...
- Publication number 20130228903
- Publication date Sep 5, 2013
- Infineon Technologies Austria AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS P...
- Publication number 20090261379
- Publication date Oct 22, 2009
- Infineon Technologies Austria AG
- Elmar FALCK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing a vertically inhomogeneous platinum or gold dis...
- Publication number 20080296612
- Publication date Dec 4, 2008
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power semiconductor component
- Publication number 20050035405
- Publication date Feb 17, 2005
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element with an emitter region and a stop zone...
- Publication number 20010005024
- Publication date Jun 28, 2001
- Josef-Georg Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor component for high reverse voltages
- Publication number 20010005036
- Publication date Jun 28, 2001
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS

Josef Georg Bauer

Person

Patents Grantslast 30 patents

Ppower semiconductor device with anticorrosive edge termination str...

Power semiconductor device termination structure

Semiconductor device with a passivation layer

Bipolar semiconductor device and method of manufacturing thereof

Adjusting the charge carrier lifetime in a bipolar semiconductor de...

Semiconductor device with vertically inhomogeneous heavy metal dopi...

Adjusting the charge carrier lifetime in a bipolar semiconductor de...

Method of producing a vertically inhomogeneous platinum or gold dis...

Semiconductor device with a passivation layer

Method of producing a vertically inhomogeneous platinum or gold dis...

Semiconductor device with a semiconductor body and method for its p...

Power semiconductor element with an emitter region and a stop zone...

Vertical power semiconductor component

Power semiconductor component for high reverse voltages

Patents Applicationslast 30 patents

Power Semiconductor Device and Method

Power Semiconductor Device

POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE

Adjusting the Charge Carrier Lifetime in a Bipolar Semiconductor De...

Bipolar Semiconductor Device and Method of Manufacturing Thereof

Method of Producing a Vertically Inhomogeneous Platinum or Gold Dis...

Semiconductor Device with a Passivation Layer

Semiconductor Device with a Passivation Layer

Method of Producing a Vertically Inhomogeneous Platinum or Gold Dis...

SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS P...

Method of producing a vertically inhomogeneous platinum or gold dis...

Vertical power semiconductor component

Power semiconductor element with an emitter region and a stop zone...

Power semiconductor component for high reverse voltages