Josef Lutz

Person

Chemnitz, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Wide band gap semiconductor device and a method for forming a wide...
- Patent number 10,700,168
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Josef Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with high current robustness
- Patent number 10,483,384
- Issue date Nov 19, 2019
- Infineon Technologies AG
- Riteshkumar Bhojani
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Power semiconductor device with improved stability and method for p...
- Patent number 9,698,138
- Issue date Jul 4, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power switching module with reduced oscillation
- Patent number 9,070,571
- Issue date Jun 30, 2015
- Infineon Technologies AG
- Josef Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor component with a fully depletable channel zone
- Patent number 9,064,923
- Issue date Jun 23, 2015
- Infineon Technologies Austria AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with optimized edge termination
- Patent number 8,946,867
- Issue date Feb 3, 2015
- Infineon Technologies Bipolar GmbH & Co. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surge-current-resistant semiconductor diode with soft recovery beha...
- Patent number 8,476,712
- Issue date Jul 2, 2013
- Infineon Technologies Austria AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with improved robustness
- Patent number 8,354,709
- Issue date Jan 15, 2013
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a buried n-doped semiconductor zone in a semic...
- Patent number 8,101,506
- Issue date Jan 24, 2012
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device and related device having robustness under extreme cond...
- Patent number 7,696,600
- Issue date Apr 13, 2010
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component comprising a temporary field stopping area,...
- Patent number 7,696,605
- Issue date Apr 13, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a buried N-doped semiconductor zone in a semic...
- Patent number 7,675,108
- Issue date Mar 9, 2010
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and IGBT
- Patent number 7,635,909
- Issue date Dec 22, 2009
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Wide Band Gap Semiconductor Device and a Method for Forming a Wide...
- Publication number 20190198621
- Publication date Jun 27, 2019
- Josef Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with High Current Robustness
- Publication number 20180061971
- Publication date Mar 1, 2018
- INFINEON TECHNOLOGIES AG
- Riteshkumar Bhojani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE
- Publication number 20170338193
- Publication date Nov 23, 2017
- DANFOSS SILICON POWER GMBH
- Josef Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Improved Stability and Method for P...
- Publication number 20160172352
- Publication date Jun 16, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION
- Publication number 20140327114
- Publication date Nov 6, 2014
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Reiner Barthelmess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Switching Module with Reduced Oscillation and Method for Manu...
- Publication number 20140264376
- Publication date Sep 18, 2014
- Josef Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A bipolar semiconductor component with a fully depletable channel zone
- Publication number 20130320500
- Publication date Dec 5, 2013
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surge-Current-Resistant Semiconductor Diode With Soft Recovery Beha...
- Publication number 20120018846
- Publication date Jan 26, 2012
- Infineon Technologies Austria AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMIC...
- Publication number 20100167509
- Publication date Jul 1, 2010
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH IMPROVED ROBUSTNESS
- Publication number 20080128798
- Publication date Jun 5, 2008
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Comprising A Temporary Field Stopping Area,...
- Publication number 20070278514
- Publication date Dec 6, 2007
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT device and related device having robustness under extreme cond...
- Publication number 20070170514
- Publication date Jul 26, 2007
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a buried N-doped semiconductor zone in a semic...
- Publication number 20060043470
- Publication date Mar 2, 2006
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor diode and IGBT
- Publication number 20050161746
- Publication date Jul 28, 2005
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Wide band gap semiconductor device and a method for forming a wide...

Transistor device with high current robustness

Power semiconductor device with improved stability and method for p...

Power switching module with reduced oscillation

Bipolar semiconductor component with a fully depletable channel zone

Semiconductor component with optimized edge termination

Surge-current-resistant semiconductor diode with soft recovery beha...

Semiconductor component with improved robustness

Method for producing a buried n-doped semiconductor zone in a semic...

IGBT device and related device having robustness under extreme cond...

Semiconductor component comprising a temporary field stopping area,...

Method for producing a buried N-doped semiconductor zone in a semic...

Semiconductor diode and IGBT

Patents Applicationslast 30 patents

Wide Band Gap Semiconductor Device and a Method for Forming a Wide...

Transistor Device with High Current Robustness

POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE

Power Semiconductor Device with Improved Stability and Method for P...

SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION

Power Switching Module with Reduced Oscillation and Method for Manu...

A bipolar semiconductor component with a fully depletable channel zone

Surge-Current-Resistant Semiconductor Diode With Soft Recovery Beha...

METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMIC...

SEMICONDUCTOR COMPONENT WITH IMPROVED ROBUSTNESS

Semiconductor Component Comprising A Temporary Field Stopping Area,...

IGBT device and related device having robustness under extreme cond...

Method for producing a buried N-doped semiconductor zone in a semic...

Semiconductor diode and IGBT