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Josef Lutz
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Chemnitz, DE
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Patents Grants
last 30 patents
Information
Patent Grant
Wide band gap semiconductor device and a method for forming a wide...
Patent number
10,700,168
Issue date
Jun 30, 2020
Infineon Technologies AG
Josef Lutz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistor device with high current robustness
Patent number
10,483,384
Issue date
Nov 19, 2019
Infineon Technologies AG
Riteshkumar Bhojani
H03 - BASIC ELECTRONIC CIRCUITRY
Information
Patent Grant
Power semiconductor device with improved stability and method for p...
Patent number
9,698,138
Issue date
Jul 4, 2017
Infineon Technologies AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Power switching module with reduced oscillation
Patent number
9,070,571
Issue date
Jun 30, 2015
Infineon Technologies AG
Josef Lutz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bipolar semiconductor component with a fully depletable channel zone
Patent number
9,064,923
Issue date
Jun 23, 2015
Infineon Technologies Austria AG
Roman Baburske
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor component with optimized edge termination
Patent number
8,946,867
Issue date
Feb 3, 2015
Infineon Technologies Bipolar GmbH & Co. KG
Reiner Barthelmess
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Surge-current-resistant semiconductor diode with soft recovery beha...
Patent number
8,476,712
Issue date
Jul 2, 2013
Infineon Technologies Austria AG
Roman Baburske
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor component with improved robustness
Patent number
8,354,709
Issue date
Jan 15, 2013
Infineon Technologies Austria AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a buried n-doped semiconductor zone in a semic...
Patent number
8,101,506
Issue date
Jan 24, 2012
Infineon Technologies AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
IGBT device and related device having robustness under extreme cond...
Patent number
7,696,600
Issue date
Apr 13, 2010
Infineon Technologies AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor component comprising a temporary field stopping area,...
Patent number
7,696,605
Issue date
Apr 13, 2010
Infineon Technologies AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a buried N-doped semiconductor zone in a semic...
Patent number
7,675,108
Issue date
Mar 9, 2010
Infineon Technologies AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor diode and IGBT
Patent number
7,635,909
Issue date
Dec 22, 2009
Infineon Technologies AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Wide Band Gap Semiconductor Device and a Method for Forming a Wide...
Publication number
20190198621
Publication date
Jun 27, 2019
Josef Lutz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Transistor Device with High Current Robustness
Publication number
20180061971
Publication date
Mar 1, 2018
INFINEON TECHNOLOGIES AG
Riteshkumar Bhojani
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE
Publication number
20170338193
Publication date
Nov 23, 2017
DANFOSS SILICON POWER GMBH
Josef Lutz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Power Semiconductor Device with Improved Stability and Method for P...
Publication number
20160172352
Publication date
Jun 16, 2016
INFINEON TECHNOLOGIES AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR COMPONENT WITH OPTIMIZED EDGE TERMINATION
Publication number
20140327114
Publication date
Nov 6, 2014
INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
Reiner Barthelmess
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Power Switching Module with Reduced Oscillation and Method for Manu...
Publication number
20140264376
Publication date
Sep 18, 2014
Josef Lutz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
A bipolar semiconductor component with a fully depletable channel zone
Publication number
20130320500
Publication date
Dec 5, 2013
Roman Baburske
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Surge-Current-Resistant Semiconductor Diode With Soft Recovery Beha...
Publication number
20120018846
Publication date
Jan 26, 2012
Infineon Technologies Austria AG
Roman Baburske
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMIC...
Publication number
20100167509
Publication date
Jul 1, 2010
INFINEON TECHNOLOGIES AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR COMPONENT WITH IMPROVED ROBUSTNESS
Publication number
20080128798
Publication date
Jun 5, 2008
Infineon Technologies Austria AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor Component Comprising A Temporary Field Stopping Area,...
Publication number
20070278514
Publication date
Dec 6, 2007
Infineon Technologies AG
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
IGBT device and related device having robustness under extreme cond...
Publication number
20070170514
Publication date
Jul 26, 2007
Infineon Technologies AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for producing a buried N-doped semiconductor zone in a semic...
Publication number
20060043470
Publication date
Mar 2, 2006
Hans-Joachim Schulze
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor diode and IGBT
Publication number
20050161746
Publication date
Jul 28, 2005
Infineon Technologies AG
Anton Mauder
H01 - BASIC ELECTRIC ELEMENTS