Joseph A. Smart

Person

Auburn, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thick pseudomorphic nitride epitaxial layers
- Patent number 10,446,391
- Issue date Oct 15, 2019
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 9,970,127
- Issue date May 15, 2018
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 9,447,521
- Issue date Sep 20, 2016
- Crystal IS, Inc.
- Leo Schowalter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thick pseudomorphic nitride epitaxial layers
- Patent number 9,437,430
- Issue date Sep 6, 2016
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 8,896,020
- Issue date Nov 25, 2014
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing large, single-crystals of alumin...
- Patent number 8,545,629
- Issue date Oct 1, 2013
- Crystal IS, Inc.
- Leo J. Schowalter
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nitride semiconductor heterostructures and related methods
- Patent number 8,222,650
- Issue date Jul 17, 2012
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick pseudomorphic nitride epitaxial layers
- Patent number 8,080,833
- Issue date Dec 20, 2011
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage GaN-based transistor structure
- Patent number 7,968,391
- Issue date Jun 28, 2011
- RF Micro Devices, Inc.
- Joseph Smart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor heterostructures and related methods
- Patent number 7,638,346
- Issue date Dec 29, 2009
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage GaN-based transistor structure
- Patent number 7,459,356
- Issue date Dec 2, 2008
- RF Micro Devices, Inc.
- Joseph Smart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface passivation of GaN devices in epitaxial growth chamber
- Patent number 7,408,182
- Issue date Aug 5, 2008
- RF Micro Devices, Inc.
- Joseph Smart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single step, high temperature nucleation process for a lattice mism...
- Patent number 7,250,360
- Issue date Jul 31, 2007
- Cornell Research Foundation, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface passivation of GaN devices in epitaxial growth chamber
- Patent number 7,052,942
- Issue date May 30, 2006
- RF Micro Devices, Inc.
- Joseph Smart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy/substrate release layer
- Patent number 7,033,961
- Issue date Apr 25, 2006
- RF Micro Devices, Inc.
- Joseph Smart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage GaN-based transistor structure
- Patent number 7,026,665
- Issue date Apr 11, 2006
- RF Micro Devices, Inc.
- Joseph Smart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single step process for epitaxial lateral overgrowth of nitride bas...
- Patent number 6,478,871
- Issue date Nov 12, 2002
- Cornell Research Foundation, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
- Publication number 20200058491
- Publication date Feb 20, 2020
- Crystal IS, Inc.
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20170159207
- Publication date Jun 8, 2017
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE...
- Publication number 20150279945
- Publication date Oct 1, 2015
- ELEMENT SIX TECHNOLOGIES US CORPORATION
- Daniel Francis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20150079329
- Publication date Mar 19, 2015
- Crystal IS, Inc.
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...
- Publication number 20140061666
- Publication date Mar 6, 2014
- Leo Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
- Publication number 20120104355
- Publication date May 3, 2012
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS
- Publication number 20100264460
- Publication date Oct 21, 2010
- James R. Grandusky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
- Publication number 20100135349
- Publication date Jun 3, 2010
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
- Publication number 20090283028
- Publication date Nov 19, 2009
- Crystal IS, Inc.
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thick Pseudomorphic Nitride Epitaxial Layers
- Publication number 20080187016
- Publication date Aug 7, 2008
- Leo J. Schowalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for producing large, single-crystals of alumin...
- Publication number 20070101932
- Publication date May 10, 2007
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Application
Single step, high temperature nucleation process for a lattice mism...
- Publication number 20060199364
- Publication date Sep 7, 2006
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS

Joseph A. Smart

Person

Patents Grantslast 30 patents

Thick pseudomorphic nitride epitaxial layers

Method and apparatus for producing large, single-crystals of alumin...

Method and apparatus for producing large, single-crystals of alumin...

Thick pseudomorphic nitride epitaxial layers

Method and apparatus for producing large, single-crystals of alumin...

Method and apparatus for producing large, single-crystals of alumin...

Nitride semiconductor heterostructures and related methods

Thick pseudomorphic nitride epitaxial layers

High voltage GaN-based transistor structure

Nitride semiconductor heterostructures and related methods

High voltage GaN-based transistor structure

Surface passivation of GaN devices in epitaxial growth chamber

Single step, high temperature nucleation process for a lattice mism...

Surface passivation of GaN devices in epitaxial growth chamber

Epitaxy/substrate release layer

High voltage GaN-based transistor structure

Single step process for epitaxial lateral overgrowth of nitride bas...

Patents Applicationslast 30 patents

THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE...

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMIN...

THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS

THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS

NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS

NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS

Thick Pseudomorphic Nitride Epitaxial Layers

Method and apparatus for producing large, single-crystals of alumin...

Single step, high temperature nucleation process for a lattice mism...