Joseph Herbert Johnson

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor (FET) having fingers with rippled edges
- Patent number 9,070,761
- Issue date Jun 30, 2015
- RF Micro Devices, Inc.
- Joseph Herbert Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BI-FET cascode power switch
- Patent number 8,536,931
- Issue date Sep 17, 2013
- RF Micro Devices, Inc.
- Kevin W. Kobayashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High performance active and passive structures based on silicon mat...
- Patent number 8,080,826
- Issue date Dec 20, 2011
- RF Micro Devices, Inc.
- Joseph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave transistor structure having step drain region
- Patent number 6,838,731
- Issue date Jan 4, 2005
- Sirenza Microdevices, Inc.
- Pablo D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave field effect transistor structure
- Patent number 6,831,332
- Issue date Dec 14, 2004
- Sirenza Microdevices, Inc.
- Pablo D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave field effect transistor structure on silicon carbide subs...
- Patent number 6,521,923
- Issue date Feb 18, 2003
- Sirenza Microdevices, Inc.
- Pablo D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power hybrid modules assembly using vacuum oven for permanent...
- Patent number 6,318,622
- Issue date Nov 20, 2001
- Xemod, Inc.
- Gregg A. Hollingsworth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Glue deposit device for power printed circuit board
- Patent number 6,045,653
- Issue date Apr 4, 2000
- Xemod, Inc.
- Joseph Herbert Johnson
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Lateral RF MOS device having a combined source structure
- Patent number 6,034,415
- Issue date Mar 7, 2000
- Xemod, Inc.
- Joseph Herbert Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source connection structure for lateral RF MOS devices
- Patent number 5,949,104
- Issue date Sep 7, 1999
- Xemod, Inc.
- Pablo Eugenio D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi-mesh gate structure for lateral RF MOS devices
- Patent number 5,900,663
- Issue date May 4, 1999
- XEMOD, Inc.
- Joseph Herbert Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature compensating transistor bias device
- Patent number 4,242,598
- Issue date Dec 30, 1980
- Varian Associates, Inc.
- Joseph H. Johnson
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
R.F. transistor package having an isolated common lead
- Patent number 3,958,195
- Issue date May 18, 1976
- Varian Associates
- Joseph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR (FET) HAVING FINGERS WITH RIPPLED EDGES
- Publication number 20140054602
- Publication date Feb 27, 2014
- RF Micro Devices, Inc.
- Joseph Herbert Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-FET CASCODE POWER SWITCH
- Publication number 20120319758
- Publication date Dec 20, 2012
- RF Micro Devices, Inc.
- Kevin W. Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Microwave field effect transistor structure
- Publication number 20030218209
- Publication date Nov 27, 2003
- XEMOD, Inc.
- Pablo D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance active and passive structures based on silicon mat...
- Publication number 20030151051
- Publication date Aug 14, 2003
- XEMOD, Inc.
- Joseph H. Johnson
- H01 - BASIC ELECTRIC ELEMENTS

Joseph Herbert Johnson

Person

Patents Grantslast 30 patents

Field effect transistor (FET) having fingers with rippled edges

BI-FET cascode power switch

High performance active and passive structures based on silicon mat...

Microwave transistor structure having step drain region

Microwave field effect transistor structure

Microwave field effect transistor structure on silicon carbide subs...

High power hybrid modules assembly using vacuum oven for permanent...

Glue deposit device for power printed circuit board

Lateral RF MOS device having a combined source structure

Source connection structure for lateral RF MOS devices

Quasi-mesh gate structure for lateral RF MOS devices

Temperature compensating transistor bias device

R.F. transistor package having an isolated common lead

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR (FET) HAVING FINGERS WITH RIPPLED EDGES

BI-FET CASCODE POWER SWITCH

Microwave field effect transistor structure

High performance active and passive structures based on silicon mat...