JOSEPH P. CAULFIELD

Person

OAKLAND, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Highly selective process for etching oxide over nitride using hexaf...
- Patent number 6,849,193
- Issue date Feb 1, 2005
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of silicon oxide etch rate and nitride selectivity usin...
- Patent number 6,797,189
- Issue date Sep 28, 2004
- Hoiman (Raymond) Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective oxide etch process using hexafluorobutadiene
- Patent number 6,613,691
- Issue date Sep 2, 2003
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for etching oxide using hexafluorobutadiene or related fluo...
- Patent number 6,602,434
- Issue date Aug 5, 2003
- Applied Materials, Inc.
- Hoiman (Raymond) Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of silicon oxide etch rate and substrate selectivity wi...
- Patent number 6,544,429
- Issue date Apr 8, 2003
- Applied Materials Inc.
- Hoiman (Raymond) Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for etching oxide using a hexafluorobutadiene and manifesti...
- Patent number 6,387,287
- Issue date May 14, 2002
- Applied Materials, Inc.
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ integrated oxide etch process particularly useful for coppe...
- Patent number 6,380,096
- Issue date Apr 30, 2002
- Applied Materials, Inc.
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated self aligned contact etch
- Patent number 6,329,292
- Issue date Dec 11, 2001
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide etch process using hexafluorobutadiene and related unsaturate...
- Patent number 6,174,451
- Issue date Jan 16, 2001
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact etch using difluoromethane and trifluoromethane
- Patent number 5,965,035
- Issue date Oct 12, 1999
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Highly selective process for etching oxide over nitride using hexaf...
- Publication number 20030000913
- Publication date Jan 2, 2003
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF SILICON OXIDE ETCH RATE AND NITRIDE SELECTIVITY USIN...
- Publication number 20020175144
- Publication date Nov 28, 2002
- HOIMAN(RAYMOND) HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU INTEGRATED OXIDE ETCH PROCESS PARTICULARLY USEFUL FOR COPPE...
- Publication number 20010008226
- Publication date Jul 19, 2001
- HOIMAN HUNG
- H01 - BASIC ELECTRIC ELEMENTS

JOSEPH P. CAULFIELD

Person

Patents Grantslast 30 patents

Highly selective process for etching oxide over nitride using hexaf...

Enhancement of silicon oxide etch rate and nitride selectivity usin...

Highly selective oxide etch process using hexafluorobutadiene

Process for etching oxide using hexafluorobutadiene or related fluo...

Enhancement of silicon oxide etch rate and substrate selectivity wi...

Process for etching oxide using a hexafluorobutadiene and manifesti...

In-situ integrated oxide etch process particularly useful for coppe...

Integrated self aligned contact etch

Oxide etch process using hexafluorobutadiene and related unsaturate...

Self aligned contact etch using difluoromethane and trifluoromethane

Patents Applicationslast 30 patents

Highly selective process for etching oxide over nitride using hexaf...

ENHANCEMENT OF SILICON OXIDE ETCH RATE AND NITRIDE SELECTIVITY USIN...

IN-SITU INTEGRATED OXIDE ETCH PROCESS PARTICULARLY USEFUL FOR COPPE...