Joseph R. Radosevich

Person

Bethlehem, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective laser annealing of semiconductor material
- Patent number 7,605,064
- Issue date Oct 20, 2009
- Agere Systems Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of silicon on insulator (SOI) devices as add-on modules f...
- Patent number 6,602,758
- Issue date Aug 5, 2003
- Agere Systems, INC
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed low voltage semiconductor devices and method of fabrication
- Patent number 6,537,867
- Issue date Mar 25, 2003
- Agere Systems Inc.
- Ronald L. Freyman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten silicide nitride as a barrier for high temperature anneals...
- Patent number 6,365,511
- Issue date Apr 2, 2002
- Agere Systems Guardian Corp.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide as a barrier for MOM capacitors in CMOS technologies
- Patent number 6,335,557
- Issue date Jan 1, 2002
- Agere Systems Guardian Corp.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a mom capacitor having a metal silicide barrier
- Patent number 6,331,460
- Issue date Dec 18, 2001
- Agere Systems Guardian Corp.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOS device having a layered silicon gate for improved silicide int...
- Patent number 6,313,021
- Issue date Nov 6, 2001
- Agere Systems Guardian Corp.
- Sailesh M. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling gate dopant penetration and diffusion in a se...
- Patent number 6,174,807
- Issue date Jan 16, 2001
- Lucent Technologies, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method of forming a metal to metal capacitor within an i...
- Patent number 6,040,616
- Issue date Mar 21, 2000
- Lucent Technologies Inc.
- Donald C. Dennis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a capacitor
- Patent number 5,851,870
- Issue date Dec 22, 1998
- Lucent Technologies Inc.
- Dayo Alugbin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component for an integrated circuit
- Patent number 5,825,073
- Issue date Oct 20, 1998
- Lucent Technologies, Inc.
- Joseph Rudolph Radosevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit capacitor
- Patent number 5,654,581
- Issue date Aug 5, 1997
- Lucent Technologies Inc.
- Joseph Rudolph Radosevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a metal to metal capacitor
- Patent number 5,576,240
- Issue date Nov 19, 1996
- Lucent Technologies Inc.
- Joseph R. Radosevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a device dielectric on a deposited semiconductor having sub...
- Patent number 5,298,436
- Issue date Mar 29, 1994
- AT&T Bell Laboratories
- Joseph R. Radosevich
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Selective laser annealing of semiconductor material
- Publication number 20070001243
- Publication date Jan 4, 2007
- Agere Systems, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device fabrication utilizing selective laser anneal to form ra...
- Publication number 20020192914
- Publication date Dec 19, 2002
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of silicon on insulator (SOI) devices as add-on modules f...
- Publication number 20020192956
- Publication date Dec 19, 2002
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Joseph R. Radosevich

Person

Patents Grantslast 30 patents

Selective laser annealing of semiconductor material

Formation of silicon on insulator (SOI) devices as add-on modules f...

High speed low voltage semiconductor devices and method of fabrication

Tungsten silicide nitride as a barrier for high temperature anneals...

Metal silicide as a barrier for MOM capacitors in CMOS technologies

Method of fabricating a mom capacitor having a metal silicide barrier

PMOS device having a layered silicon gate for improved silicide int...

Method of controlling gate dopant penetration and diffusion in a se...

Device and method of forming a metal to metal capacitor within an i...

Method for making a capacitor

Electronic component for an integrated circuit

Integrated circuit capacitor

Method for making a metal to metal capacitor

Forming a device dielectric on a deposited semiconductor having sub...

Patents Applicationslast 30 patents

Selective laser annealing of semiconductor material

CMOS device fabrication utilizing selective laser anneal to form ra...

Formation of silicon on insulator (SOI) devices as add-on modules f...