Joseph S. Newbury

Person

Irvington, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-rate chemical vapor etch of silicon substrates
- Patent number 8,927,431
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer
- Patent number 8,865,556
- Issue date Oct 21, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer dopant embedded stressor for advanced CMOS
- Patent number 8,421,191
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS circuits, and methods for fabricating same
- Patent number 8,383,483
- Issue date Feb 26, 2013
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolayer dopant embedded stressor for advanced CMOS
- Patent number 8,236,660
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide (salicide) process for strained silicon MOSFE...
- Patent number 6,503,833
- Issue date Jan 7, 2003
- International Business Machines Corporation
- Atul Champaklal Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial oxidation process for high-k gate dielectric process in...
- Patent number 6,444,592
- Issue date Sep 3, 2002
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for retarding high temperature agglomeration o...
- Patent number 6,413,859
- Issue date Jul 2, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High-Rate Chemical Vapor Etch of Silicon Substrates
- Publication number 20140357082
- Publication date Dec 4, 2014
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
- Publication number 20140054700
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
- Publication number 20140057399
- Publication date Feb 27, 2014
- International Business Machines Corporation
- Joseph S. Newbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS
- Publication number 20120261717
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS
- Publication number 20110260213
- Publication date Oct 27, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME
- Publication number 20100041221
- Publication date Feb 18, 2010
- International Business Machines Coporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS circuits, and methods for fabricating the same
- Publication number 20070152276
- Publication date Jul 5, 2007
- International Business Machines Corporation
- John C. Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned silicide (salicide) process for strained silicon MOSFE...
- Publication number 20030068883
- Publication date Apr 10, 2003
- International Business Machines Corporation
- Atul Champaklal Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for retarding high temperature agglomeration o...
- Publication number 20020151158
- Publication date Oct 17, 2002
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR RETARDING HIGH TEMPERATURE AGGLOMERATION O...
- Publication number 20020061636
- Publication date May 23, 2002
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS

Joseph S. Newbury

Person

Patents Grantslast 30 patents

High-rate chemical vapor etch of silicon substrates

Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer

Monolayer dopant embedded stressor for advanced CMOS

High performance CMOS circuits, and methods for fabricating same

Monolayer dopant embedded stressor for advanced CMOS

Self-aligned silicide (salicide) process for strained silicon MOSFE...

Interfacial oxidation process for high-k gate dielectric process in...

Method and structure for retarding high temperature agglomeration o...

Patents Applicationslast 30 patents

High-Rate Chemical Vapor Etch of Silicon Substrates

Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS

MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS

HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME

High performance CMOS circuits, and methods for fabricating the same

Self-aligned silicide (salicide) process for strained silicon MOSFE...

Method and structure for retarding high temperature agglomeration o...

METHOD AND STRUCTURE FOR RETARDING HIGH TEMPERATURE AGGLOMERATION O...