Joyeeta NAG

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,996,462
- Issue date May 28, 2024
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors having enhanced memory windo...
- Patent number 11,545,506
- Issue date Jan 3, 2023
- SanDisk Technologies LLC
- Bhagwati Prasad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device containing ovonic threshold switch material thermal i...
- Patent number 11,031,435
- Issue date Jun 8, 2021
- Western Digital Technologies, Inc.
- Michael Grobis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064991
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064992
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20220165937
- Publication date May 26, 2022
- SANDISK TECHNOLOGIES LLC
- Jeffrey LILLE
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...
- Publication number 20220157852
- Publication date May 19, 2022
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...
- Publication number 20220157966
- Publication date May 19, 2022
- SANDISK TECHNOLOGIES LLC
- Bhagwati PRASAD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20210407943
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING OVONIC THRESHOLD SWITCH MATERIAL THERMAL I...
- Publication number 20200395410
- Publication date Dec 17, 2020
- Western Digital Technologies, Inc.
- Michael GROBIS
- H01 - BASIC ELECTRIC ELEMENTS

Joyeeta NAG

Person

Patents Grantslast 30 patents

Ferroelectric field effect transistors having enhanced memory windo...

Ferroelectric field effect transistors having enhanced memory windo...

Memory device containing ovonic threshold switch material thermal i...

Patents Applicationslast 30 patents

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

BONDED MEMORY DEVICES AND METHODS OF MAKING THE SAME

FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...

FERROELECTRIC FIELD EFFECT TRANSISTORS HAVING ENHANCED MEMORY WINDO...

BONDED MEMORY DEVICES AND METHODS OF MAKING THE SAME

MEMORY DEVICE CONTAINING OVONIC THRESHOLD SWITCH MATERIAL THERMAL I...