Ju-Li Huang

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structures
- Patent number 12,027,415
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate using monolayers
- Patent number 12,015,077
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 11,923,201
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate resistance improvement and method thereof
- Patent number 11,810,978
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures
- Patent number 11,476,156
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming metal gates
- Patent number 11,295,990
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate using monolayers
- Patent number 11,257,924
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-k dielectric layers with diffe...
- Patent number 11,114,347
- Issue date Sep 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate and method for fabricating the same
- Patent number 11,031,302
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate resistance improvement and method thereof
- Patent number 11,031,500
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-k dielectric layer
- Patent number 10,937,656
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures
- Patent number 10,755,970
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal gate using monolayers
- Patent number 10,541,317
- Issue date Jan 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming metal gates
- Patent number 10,529,629
- Issue date Jan 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-K dielectric layer
- Patent number 10,490,410
- Issue date Nov 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate and method for fabricating the same
- Patent number 10,361,133
- Issue date Jul 23, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-k dielectric layers with diffe...
- Patent number 10,283,417
- Issue date May 7, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-protective layer formed on high-k dielectric layer
- Patent number 10,170,317
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gates
- Patent number 9,761,684
- Issue date Sep 12, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gates
- Patent number 9,431,304
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL GATES FOR SEMICONDUCTOR DEVICES AND METHOD THEREOF
- Publication number 20240429281
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20240249976
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER
- Publication number 20240203740
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF
- Publication number 20230378360
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structures
- Publication number 20220399227
- Publication date Dec 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Using Monolayers
- Publication number 20220173226
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF
- Publication number 20210296483
- Publication date Sep 23, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Ju-Li HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Protective Layer Formed on High-K Dielectric Layer
- Publication number 20210193469
- Publication date Jun 24, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structures
- Publication number 20200388526
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Metal Gates
- Publication number 20200152521
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Metal Gate Using Monolayers
- Publication number 20200152772
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Protective Layer Formed on High-K Dielectric Layer
- Publication number 20200090940
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF
- Publication number 20200044073
- Publication date Feb 6, 2020
- Taiwam Semiconductor Manufacturing Co., Ltd.
- Ju-Li HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structures
- Publication number 20190385896
- Publication date Dec 19, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Metal Gate and Method for Fabricating the Same
- Publication number 20190341317
- Publication date Nov 7, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- JU-LI HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Metal Gates
- Publication number 20190333826
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET PROCESS ASSISTED APPROACH FOR SELECTIVE BARRIER METAL PATTERNIN...
- Publication number 20190273149
- Publication date Sep 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Li HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Protective Layer Formed on High-K Dielectric Layer
- Publication number 20190164766
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Protective Layer Formed on High-K Dielectric Layers with Diffe...
- Publication number 20190131185
- Publication date May 2, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190088556
- Publication date Mar 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- JU-LI HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Metal Gates
- Publication number 20160372565
- Publication date Dec 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Metal Gates
- Publication number 20160181163
- Publication date Jun 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ju-Li Huang
- H01 - BASIC ELECTRIC ELEMENTS

Ju-Li Huang

Person

Patents Grantslast 30 patents

Semiconductor device structures

Metal gate using monolayers

Self-protective layer formed on high-K dielectric layer

Gate resistance improvement and method thereof

Semiconductor device structures

Methods of forming metal gates

Metal gate using monolayers

Self-protective layer formed on high-k dielectric layers with diffe...

High-k metal gate and method for fabricating the same

Gate resistance improvement and method thereof

Self-protective layer formed on high-k dielectric layer

Semiconductor device structures

Method of forming a metal gate using monolayers

Methods of forming metal gates

Self-protective layer formed on high-K dielectric layer

High-K metal gate and method for fabricating the same

Self-protective layer formed on high-k dielectric layers with diffe...

Self-protective layer formed on high-k dielectric layer

Method and structure for metal gates

Method and structure for metal gates

Patents Applicationslast 30 patents

METAL GATES FOR SEMICONDUCTOR DEVICES AND METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURES

SELF-PROTECTIVE LAYER FORMED ON HIGH-K DIELECTRIC LAYER

GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF

Semiconductor Device Structures

Metal Gate Using Monolayers

GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF

Self-Protective Layer Formed on High-K Dielectric Layer

Semiconductor Device Structures

Methods of Forming Metal Gates

Method of Forming a Metal Gate Using Monolayers

Self-Protective Layer Formed on High-K Dielectric Layer

GATE RESISTANCE IMPROVEMENT AND METHOD THEREOF

Semiconductor Device Structures

High-K Metal Gate and Method for Fabricating the Same

Methods of Forming Metal Gates

WET PROCESS ASSISTED APPROACH FOR SELECTIVE BARRIER METAL PATTERNIN...

Self-Protective Layer Formed on High-K Dielectric Layer

Self-Protective Layer Formed on High-K Dielectric Layers with Diffe...

HIGH-K METAL GATE AND METHOD FOR FABRICATING THE SAME

Method and Structure for Metal Gates

Method and Structure for Metal Gates