Juan Cai

Follow

Person

Freemont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hetero-integrated strained silicon n- and p-MOSFETs
- Patent number 7,396,747
- Issue date Jul 8, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integrated strained silicon n- and p-MOSFETs
- Patent number 7,273,800
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20080251813
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20070278517
- Publication date Dec 6, 2007
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-integrated strained silicon n-and p-MOSFETs
- Publication number 20060091377
- Publication date May 4, 2006
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS