Judson R. Holt

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor integration on a silicon-on-insulator substrate
- Patent number 12,113,070
- Issue date Oct 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistors
- Patent number 12,040,388
- Issue date Jul 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors
- Patent number 12,009,412
- Issue date Jun 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistor with emitter and/or colle...
- Patent number 11,990,535
- Issue date May 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with substrate-embedded arrow waveguide and method
- Patent number 11,977,258
- Issue date May 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Laura J. Silverstein
- G02 - OPTICS
Information Patent Grant
Lateral bipolar transistors with gate structure aligned to extrinsi...
- Patent number 11,949,004
- Issue date Apr 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with thermal conductor
- Patent number 11,942,534
- Issue date Mar 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor with gated collector
- Patent number 11,935,923
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structures with base having varying horizontal w...
- Patent number 11,916,109
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors including a graded silicon-ger...
- Patent number 11,916,136
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for random code generation
- Patent number 11,907,685
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fin-based lateral bipolar junction transistor and method
- Patent number 11,888,031
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with inner and outer spacers a...
- Patent number 11,888,050
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. Lemon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,881,523
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 11,881,395
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,869,958
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with superlattice layer and me...
- Patent number 11,862,717
- Issue date Jan 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,195
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 11,855,196
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistors
- Patent number 11,855,197
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including a portion of a base layer in...
- Patent number 11,848,374
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure on semiconductor fin and methods to fo...
- Patent number 11,843,044
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-core heterogeneous waveguide structures including multiple...
- Patent number 11,835,764
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- G02 - OPTICS
Information Patent Grant
Lateral bipolar junction transistor including a stress layer and me...
- Patent number 11,837,653
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,810,969
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonics structures having a locally-thickened dielectric layer
- Patent number 11,803,009
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures with one or more raised terminals
- Patent number 11,804,543
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annular bipolar transistors
- Patent number 11,804,542
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with marker layer for emitter...
- Patent number 11,799,021
- Issue date Oct 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHOTODETECTORS WITH A LIGHT-ABSORBING LAYER AT LEAST PARTIALLY WRAP...
- Publication number 20240347652
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Zhuojie Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE AND LOW RESISTANCE DEVICES
- Publication number 20240339527
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS
- Publication number 20240297242
- Publication date Sep 5, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...
- Publication number 20240282852
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC DEVICE WITH VERTICALLY-GRADED SILICON GERMANIUM REGION ADJACENT...
- Publication number 20240258376
- Publication date Aug 1, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson Robert Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSI...
- Publication number 20240250158
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONICALLY PROGRAMMABLE FUSE WITH HEATING TRANSISTORS
- Publication number 20240234305
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh M. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL PHOTOTRANSISTOR
- Publication number 20240186441
- Publication date Jun 6, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. DERRICKSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH METAL FIELD PLATE CONTACT
- Publication number 20240162345
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh M. PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR
- Publication number 20240136400
- Publication date Apr 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...
- Publication number 20240105503
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SHESH MANI PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRO-ABSORPTION MODULATORS WITH STACKED WAVEGUIDE TAPERS
- Publication number 20240085624
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Yusheng Bian
- G02 - OPTICS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20240021713
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20240006517
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20230395607
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20230369474
- Publication date Nov 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20230369473
- Publication date Nov 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH THERMAL CONDUCTOR
- Publication number 20230290868
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURES WITH BASE HAVING VARYING HORIZONTAL W...
- Publication number 20230290829
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS INCLUDING A GRADED SILICON-GER...
- Publication number 20230275145
- Publication date Aug 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONICS STRUCTURES HAVING A LOCALLY-THICKENED DIELECTRIC LAYER
- Publication number 20230273369
- Publication date Aug 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-CORE HETEROGENEOUS WAVEGUIDE STRUCTURES INCLUDING MULTIPLE...
- Publication number 20230244033
- Publication date Aug 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- G02 - OPTICS
Information Patent Application
VERTICAL BIPOLAR TRANSISTORS
- Publication number 20230231041
- Publication date Jul 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...
- Publication number 20230223463
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...
- Publication number 20230223462
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230129914
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20230127768
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...
- Publication number 20230098557
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED BREAKDOWN V...
- Publication number 20230102573
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...
- Publication number 20230092435
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- MANKYU YANG
- H01 - BASIC ELECTRIC ELEMENTS

Judson R. Holt

Person

Patents Grantslast 30 patents

Transistor with wrap-around extrinsic base

Transistor integration on a silicon-on-insulator substrate

Lateral bipolar transistors

Bipolar transistors

Lateral heterojunction bipolar transistor with emitter and/or colle...

Structure with substrate-embedded arrow waveguide and method

Lateral bipolar transistors with gate structure aligned to extrinsi...

Bipolar transistor with thermal conductor

Lateral bipolar transistor with gated collector

Bipolar transistor structures with base having varying horizontal w...

Lateral bipolar junction transistors including a graded silicon-ger...

Structure and method for random code generation

Fin-based lateral bipolar junction transistor and method

Lateral bipolar transistor structure with inner and outer spacers a...

Heterojunction bipolar transistors

Bipolar transistor structure on semiconductor fin and methods to fo...

Heterojunction bipolar transistors

Lateral bipolar transistor structure with superlattice layer and me...

Transistor with wrap-around extrinsic base

Transistor with wrap-around extrinsic base

Vertical bipolar transistors

Bipolar junction transistors including a portion of a base layer in...

Bipolar transistor structure on semiconductor fin and methods to fo...

Multiple-core heterogeneous waveguide structures including multiple...

Lateral bipolar junction transistor including a stress layer and me...

Lateral bipolar transistor

Photonics structures having a locally-thickened dielectric layer

Diode structures with one or more raised terminals

Annular bipolar transistors

Lateral bipolar transistor structure with marker layer for emitter...

Patents Applicationslast 30 patents

PHOTODETECTORS WITH A LIGHT-ABSORBING LAYER AT LEAST PARTIALLY WRAP...

LOW CAPACITANCE AND LOW RESISTANCE DEVICES

LATERAL BIPOLAR TRANSISTORS

SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...

IC DEVICE WITH VERTICALLY-GRADED SILICON GERMANIUM REGION ADJACENT...

LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSI...

ELECTRONICALLY PROGRAMMABLE FUSE WITH HEATING TRANSISTORS

LATERAL PHOTOTRANSISTOR

TRANSISTOR WITH METAL FIELD PLATE CONTACT

LATERAL BIPOLAR TRANSISTOR WITH GATED COLLECTOR

SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...

ELECTRO-ABSORPTION MODULATORS WITH STACKED WAVEGUIDE TAPERS

LATERAL BIPOLAR TRANSISTOR

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE

HETEROJUNCTION BIPOLAR TRANSISTORS

HETEROJUNCTION BIPOLAR TRANSISTORS

BIPOLAR TRANSISTOR WITH THERMAL CONDUCTOR

BIPOLAR TRANSISTOR STRUCTURES WITH BASE HAVING VARYING HORIZONTAL W...

LATERAL BIPOLAR JUNCTION TRANSISTORS INCLUDING A GRADED SILICON-GER...

PHOTONICS STRUCTURES HAVING A LOCALLY-THICKENED DIELECTRIC LAYER

MULTIPLE-CORE HETEROGENEOUS WAVEGUIDE STRUCTURES INCLUDING MULTIPLE...

VERTICAL BIPOLAR TRANSISTORS

BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...

BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...

LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED BREAKDOWN V...

LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...