Juergen Steinbrenner

Person

Noetsch, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with first and second portions that include si...
- Patent number 11,804,415
- Issue date Oct 31, 2023
- Infineon Technologies AG
- Markus Kahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Wafer chuck and processing arrangement
- Patent number 11,387,081
- Issue date Jul 12, 2022
- Infineon Technologies AG
- Rudolf Kogler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Passivation structuring and plating for semiconductor devices
- Patent number 11,387,095
- Issue date Jul 12, 2022
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, microphone and methods for forming a semicond...
- Patent number 11,352,253
- Issue date Jun 7, 2022
- Infineon Technologies AG
- Markus Kahn
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device including a passivation structure and manufact...
- Patent number 11,211,303
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a portion including silicon and nitrogen...
- Patent number 11,075,134
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Markus Kahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube structure based metal damascene process
- Patent number 10,910,309
- Issue date Feb 2, 2021
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, microphone and methods for forming a semicond...
- Patent number 10,858,246
- Issue date Dec 8, 2020
- Infineon Technologies AG
- Markus Kahn
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Silicon carbide semiconductor device having a metal adhesion and ba...
- Patent number 10,777,506
- Issue date Sep 15, 2020
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer chuck and processing arrangement
- Patent number 10,629,416
- Issue date Apr 21, 2020
- Infineon Technologies AG
- Rudolf Kogler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having a metal adhesion and barrier structure...
- Patent number 10,475,743
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming recombination centers in a semiconductor device
- Patent number 10,347,491
- Issue date Jul 9, 2019
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method for processing a semiconductor wafer
- Patent number 10,325,803
- Issue date Jun 18, 2019
- Infineon Technologies AG
- Matthias Kuenle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 10,049,879
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube structure based metal damascene process
- Patent number 10,043,750
- Issue date Aug 7, 2018
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method for processing a semiconductor wafer
- Patent number 9,984,915
- Issue date May 29, 2018
- Infineon Technologies AG
- Matthias Kuenle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for processing a semiconductor layer, method for processing...
- Patent number 9,941,111
- Issue date Apr 10, 2018
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermediate layer for copper structuring and methods of formation...
- Patent number 9,773,736
- Issue date Sep 26, 2017
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench using epitaxial lateral overgrowth
- Patent number 9,768,273
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer and method of making a passivation layer
- Patent number 9,728,480
- Issue date Aug 8, 2017
- Infineon Technologies AG
- Kurt Matoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube structure based metal damascene process
- Patent number 9,704,800
- Issue date Jul 11, 2017
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 9,666,482
- Issue date May 30, 2017
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for coating a workpiece
- Patent number 9,478,409
- Issue date Oct 25, 2016
- Infineon Technologies AG
- Juergen Steinbrenner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Controlling the reflow behaviour of BPSG films and devices made the...
- Patent number 9,455,136
- Issue date Sep 27, 2016
- Infineon Technologies Austria AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench using epitaxial lateral overgrowth and d...
- Patent number 9,379,196
- Issue date Jun 28, 2016
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube structure based metal damascene process
- Patent number 9,159,669
- Issue date Oct 13, 2015
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
- Publication number 20240194779
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Christian Zmölnig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING CONTACT PAD STRUCTURE
- Publication number 20230317542
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Jochen HILSENBECK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING A STRUCTURED METALLIZATION LAYER
- Publication number 20220285149
- Publication date Sep 8, 2022
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION STRUCTURING AND PLATING FOR SEMICONDUCTOR DEVICES
- Publication number 20220059347
- Publication date Feb 24, 2022
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIRST AND SECOND PORTIONS THAT INCLUDE SI...
- Publication number 20210287954
- Publication date Sep 16, 2021
- Markus Kahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor Device, Microphone and Methods for Forming a Semicond...
- Publication number 20210002132
- Publication date Jan 7, 2021
- INFINEON TECHNOLOGIES AG
- Markus Kahn
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
WAFER CHUCK AND PROCESSING ARRANGEMENT
- Publication number 20200251314
- Publication date Aug 6, 2020
- INFINEON TECHNOLOGIES AG
- Rudolf Kogler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...
- Publication number 20200185297
- Publication date Jun 11, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method for Forming a Recess for a Trench Gate...
- Publication number 20200111896
- Publication date Apr 9, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Portion Including Silicon and Nitrogen...
- Publication number 20200083133
- Publication date Mar 12, 2020
- Markus Kahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...
- Publication number 20200013722
- Publication date Jan 9, 2020
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing
- Publication number 20190333765
- Publication date Oct 31, 2019
- Markus Kahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlling the Reflow Behaviour of BPSG Films and Devices Made The...
- Publication number 20180247820
- Publication date Aug 30, 2018
- Infineon Technologies Austria AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER
- Publication number 20180247857
- Publication date Aug 30, 2018
- INFINEON TECHNOLOGIES AG
- Matthias Kuenle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE, MICROPHONE AND METHODS FOR FORMING A SEMICOND...
- Publication number 20180237292
- Publication date Aug 23, 2018
- INFINEON TECHNOLOGIES AG
- Markus Kahn
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
WAFER CHUCK AND PROCESSING ARRANGEMENT
- Publication number 20180211821
- Publication date Jul 26, 2018
- Infineon Technologies AG
- Rudolf Kogler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Forming Recombination Centers in a Semiconductor Device
- Publication number 20180182629
- Publication date Jun 28, 2018
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self Aligned Silicon Carbide Contact Formation Using Protective Layer
- Publication number 20180076036
- Publication date Mar 15, 2018
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOTUBE STRUCTURE BASED METAL DAMASCENE PROCESS
- Publication number 20180012836
- Publication date Jan 11, 2018
- INFINEON TECHNOLOGIES AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Metal Adhesion and Barrier Structure...
- Publication number 20170271268
- Publication date Sep 21, 2017
- INFINEON TECHNOLOGIES AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Devices
- Publication number 20170110331
- Publication date Apr 20, 2017
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlling the Reflow Behaviour of BPSG Films and Devices Made The...
- Publication number 20170011927
- Publication date Jan 12, 2017
- Infineon Technologies Austria AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Method for Forming Semiconductor Devices
- Publication number 20170005091
- Publication date Jan 5, 2017
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A SEMICONDUCTOR LAYER, METHOD FOR PROCESSING...
- Publication number 20160351413
- Publication date Dec 1, 2016
- INFINEON TECHNOLOGIES AG
- Gerhard SCHMIDT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Trench Using Epitaxial Lateral Overgrowth
- Publication number 20160308028
- Publication date Oct 20, 2016
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING THE REFLOW BEHAVIOUR OF BPSG FILMS AND DEVICES MADE THE...
- Publication number 20160218002
- Publication date Jul 28, 2016
- Infineon Technologies Austria AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Intermediate Layer for Copper Structuring and Methods of Formation...
- Publication number 20160218033
- Publication date Jul 28, 2016
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOTUBE STRUCTURE BASED METAL DAMASCENE PROCESS
- Publication number 20150371942
- Publication date Dec 24, 2015
- INFINEON TECHNOLOGIES AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER
- Publication number 20150348824
- Publication date Dec 3, 2015
- INFINEON TECHNOLOGIES AG
- Matthias Kuenle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR COATING A WORKPIECE
- Publication number 20150340224
- Publication date Nov 26, 2015
- INFINEON TECHNOLOGIES AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS

Juergen Steinbrenner

Person

Patents Grantslast 30 patents

Semiconductor device with first and second portions that include si...

Wafer chuck and processing arrangement

Passivation structuring and plating for semiconductor devices

Semiconductor device, microphone and methods for forming a semicond...

Semiconductor device including a passivation structure and manufact...

Semiconductor device with a portion including silicon and nitrogen...

Nanotube structure based metal damascene process

Semiconductor device, microphone and methods for forming a semicond...

Silicon carbide semiconductor device having a metal adhesion and ba...

Wafer chuck and processing arrangement

Semiconductor device having a metal adhesion and barrier structure...

Forming recombination centers in a semiconductor device

Semiconductor wafer and method for processing a semiconductor wafer

Self aligned silicon carbide contact formation using protective layer

Nanotube structure based metal damascene process

Semiconductor wafer and method for processing a semiconductor wafer

Method for processing a semiconductor layer, method for processing...

Intermediate layer for copper structuring and methods of formation...

Method of forming a trench using epitaxial lateral overgrowth

Passivation layer and method of making a passivation layer

Nanotube structure based metal damascene process

Self aligned silicon carbide contact formation using protective layer

Method for coating a workpiece

Controlling the reflow behaviour of BPSG films and devices made the...

Method of forming a trench using epitaxial lateral overgrowth and d...

Nanotube structure based metal damascene process

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF

SEMICONDUCTOR DEVICE COMPRISING CONTACT PAD STRUCTURE

POWER SEMICONDUCTOR DEVICE HAVING A STRUCTURED METALLIZATION LAYER

PASSIVATION STRUCTURING AND PLATING FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH FIRST AND SECOND PORTIONS THAT INCLUDE SI...

Semiconductor Device, Microphone and Methods for Forming a Semicond...

WAFER CHUCK AND PROCESSING ARRANGEMENT

SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...

Transistor Device and Method for Forming a Recess for a Trench Gate...

Semiconductor Device with a Portion Including Silicon and Nitrogen...

Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...

Semiconductor Device and Manufacturing

Controlling the Reflow Behaviour of BPSG Films and Devices Made The...

SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER

SEMICONDUCTOR DEVICE, MICROPHONE AND METHODS FOR FORMING A SEMICOND...

WAFER CHUCK AND PROCESSING ARRANGEMENT

Forming Recombination Centers in a Semiconductor Device

Self Aligned Silicon Carbide Contact Formation Using Protective Layer

NANOTUBE STRUCTURE BASED METAL DAMASCENE PROCESS

Semiconductor Device Having a Metal Adhesion and Barrier Structure...

Methods for Forming Semiconductor Devices

Controlling the Reflow Behaviour of BPSG Films and Devices Made The...

Semiconductor Devices and Method for Forming Semiconductor Devices

METHOD FOR PROCESSING A SEMICONDUCTOR LAYER, METHOD FOR PROCESSING...

Method of Forming a Trench Using Epitaxial Lateral Overgrowth

CONTROLLING THE REFLOW BEHAVIOUR OF BPSG FILMS AND DEVICES MADE THE...

Intermediate Layer for Copper Structuring and Methods of Formation...

NANOTUBE STRUCTURE BASED METAL DAMASCENE PROCESS

SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER

METHOD FOR COATING A WORKPIECE