Jui-Tsung Lien

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride-free spacer or oxide spacer for embedded flash memory
- Patent number 11,264,400
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test line letter for embedded non-volatile memory technology
- Patent number 11,069,419
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jui-Tsung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Nitride-free spacer or oxide spacer for embedded flash memory
- Patent number 10,847,530
- Issue date Nov 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-free spacer or oxide spacer for embedded flash memory
- Patent number 10,475,805
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,381,358
- Issue date Aug 13, 2019
- TAIWAN SEMICONDUCTOR MAUFACTURING CO., LTD.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-free spacer or oxide spacer for embedded flash memory
- Patent number 10,347,649
- Issue date Jul 9, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test line letter for embedded non-volatile memory technology
- Patent number 10,163,522
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Tsung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,032,786
- Issue date Jul 24, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test line patterns in split-gate flash technology
- Patent number 9,983,257
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-free spacer or oxide spacer for embedded flash memory
- Patent number 9,960,176
- Issue date May 1, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY
- Publication number 20210074712
- Publication date Mar 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY
- Publication number 20200035692
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY
- Publication number 20190252394
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST LINE LETTER FOR EMBEDDED NON-VOLATILE MEMORY TECHNOLOGY
- Publication number 20190019567
- Publication date Jan 17, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Jui-Tsung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180277553
- Publication date Sep 27, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY
- Publication number 20180219018
- Publication date Aug 2, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180083019
- Publication date Mar 22, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY
- Publication number 20170133388
- Publication date May 11, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Test Line Patterns in Split-Gate Flash Technology
- Publication number 20170110202
- Publication date Apr 20, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Cheng Wu
- G01 - MEASURING TESTING
Information Patent Application
Test Line Letter for Embedded Non-Volatile Memory Technology
- Publication number 20170110201
- Publication date Apr 20, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Jui-Tsung Lien
- G01 - MEASURING TESTING

Jui-Tsung Lien

Person

Patents Grantslast 30 patents

Nitride-free spacer or oxide spacer for embedded flash memory

Test line letter for embedded non-volatile memory technology

Nitride-free spacer or oxide spacer for embedded flash memory

Nitride-free spacer or oxide spacer for embedded flash memory

Semiconductor device and manufacturing method thereof

Nitride-free spacer or oxide spacer for embedded flash memory

Test line letter for embedded non-volatile memory technology

Semiconductor device and manufacturing method thereof

Test line patterns in split-gate flash technology

Nitride-free spacer or oxide spacer for embedded flash memory

Patents Applicationslast 30 patents

NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY

NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY

NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY

TEST LINE LETTER FOR EMBEDDED NON-VOLATILE MEMORY TECHNOLOGY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE-FREE SPACER OR OXIDE SPACER FOR EMBEDDED FLASH MEMORY

Test Line Patterns in Split-Gate Flash Technology

Test Line Letter for Embedded Non-Volatile Memory Technology