Julie Huang

Person

Chinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
DRAM contact process by localized etch-stop removal
- Patent number 6,184,076
- Issue date Feb 6, 2001
- Taiwan Semiconductor Manufacturing Company
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM contact process by localized etch-stop removal
- Patent number 5,946,569
- Issue date Aug 31, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming DRAM stacked capacitor
- Patent number 5,943,582
- Issue date Aug 24, 1999
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
External contact to a MOSFET drain for testing of stacked-capacitor...
- Patent number 5,914,512
- Issue date Jun 22, 1999
- Taiwan Semicondutor Manufacturing Company, Ltd.
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making low-topography buried capacitor by a two stage et...
- Patent number 5,885,865
- Issue date Mar 23, 1999
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Mong-Song Liang
- E04 - BUILDING
Information Patent Grant
Method for edge profile and design rules control
- Patent number 5,877,092
- Issue date Mar 2, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shing-Long Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making buried contact in DRAM technology
- Patent number 5,846,860
- Issue date Dec 8, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an external contact to a MOSFET drain for testing...
- Patent number 5,783,462
- Issue date Jul 21, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a cylindrical capacitor
- Patent number 5,736,450
- Issue date Apr 7, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dielectric spacer to prevent poly stringer in st...
- Patent number 5,723,374
- Issue date Mar 3, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Julie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a dual-gate dielectric module for memory wit...
- Patent number 5,668,035
- Issue date Sep 16, 1997
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chung Hsin Fang
- H01 - BASIC ELECTRIC ELEMENTS

Julie Huang

Person

Patents Grantslast 30 patents

DRAM contact process by localized etch-stop removal

DRAM contact process by localized etch-stop removal

Method for forming DRAM stacked capacitor

External contact to a MOSFET drain for testing of stacked-capacitor...

Method for making low-topography buried capacitor by a two stage et...

Method for edge profile and design rules control

Method of making buried contact in DRAM technology

Method of making an external contact to a MOSFET drain for testing...

Method for forming a cylindrical capacitor

Method for forming dielectric spacer to prevent poly stringer in st...

Method for fabricating a dual-gate dielectric module for memory wit...